PBSS2540MB,315 - NXP Semiconductors

1. Product profile

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3540MB.

1.2 Features and benefits

Leadless ultra small SMD plastic

package

Low package height of 0.37 mm

Low collector-emitter saturation

voltage VCEsat

High collector current capability IC and

ICM

High efficiency due to less heat

generation

AEC-Q101 qualified

Reduced Printed-Circuit Board (PCB)

requirements

1.3 Applications

DC-to-DC conversion

Supply line switching

Battery charger

LCD backlighting

Drivers in low supply voltage

applications (e.g. lamps and LEDs)

1.4 Quick reference data

PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

Rev. 1 — 4 April 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter

voltage open base - - 40 V

ICcollector current - - 500 mA

ICM peak collector current single pulse; tp≤1ms --1A

RCEsat collector-emitter

saturation resistance IC=500mA; I

B= 50 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C - 380 500 mΩ

Product data sheet Rev. 1 — 4 April 2012 2 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

Tabl e 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1 B base

SOT883B (DFN1006B-3)

2Eemitter

3 C collector

Transparent

top view

sym021

Table 3. Ordering information

Type number Package

Name Description Version

PBSS2540MB DFN1006B-3 Leadless ultra small plastic package; 3 solder lands;

body 1.0 x 0.6 x 0.37 mm SOT883B

Table 4. Marking codes

Type number Marking code

PBSS2540MB 0001 0010

Fig 1. DFN1006B-3 (SOT883B) binary marking code desc ription

MARKING CODE

(EXAMPLE)

PIN 1 INDICATION READING DIRECTION

READING DIRECTION

READING EXAMPLE:

0111

1011

006aac673

Product data sheet Rev. 1 — 4 April 2012 3 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

5. Limiting values

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 40 V

VCEO collector-emitter voltage open base - 40 V

VEBO emitter-base voltage open collector - 6 V

ICcollector current - 500 mA

ICM peak collector current single pulse; tp≤1ms - 1 A

IBM peak base current single pulse; tp≤1 ms - 100 mA

Ptot total power dissipation Tamb ≤25 °C [1][2] - 250 mW

[3][2] - 590 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Product data sheet Rev. 1 — 4 April 2012 4 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1][2] - - 500 K/W

[3][2] - - 212 K/W

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for collector 1 cm2

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab603

−5

1010

−2

−4

−1

(s)

−3

th(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.2

0.1

0.05 0.02

0.01

006aac985

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1 0.05

0.02

0.01

Product data sheet Rev. 1 — 4 April 2012 5 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =30V; I

E=0A; T

amb = 25 °C - - 100 nA

VCB =30V; I

E=0A; T

j=150°C --50µA

IEBO emitter-base cu t-off

current VEB =5V; I

C=0A; T

amb = 25 °C - - 100 nA

hFE DC current ga i n VCE =2V; I

C=10mA; T

amb = 25 °C 200 - -

VCE =2V; I

C= 100 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C 150 - -

VCE =2V; I

C= 500 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C 50 - -

VCEsat collector-emitter

saturati on voltage IC=10mA; I

B= 0.5 mA; Tamb =25°C --50mV

IC=100mA; I

B= 5 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C - - 100 mV

IC=200mA; I

B= 10 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C - - 200 mV

IC=500mA; I

B= 50 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C - - 250 mV

RCEsat collector-emitter

saturation resistance IC=500mA; I

B= 50 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C - 380 500 mΩ

VBEsat base-emitter saturation

voltage IC=500mA; I

B= 50 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C --1.2V

VBEon base-emitter turn-on

voltage VCE =2V; I

C= 100 mA; pulsed;

tp≤300 µs; δ≤0.02 ; Tamb =25°C --1.1V

fTtransition frequency VCE =5V; I

C= 100 mA; f = 100 MHz;

Tamb =25°C 250 450 - MHz

Cccollector capacitance VCB =10V; I

E=0A; i

e=0A;

f=1MHz; T

amb =25°C --6pF

Product data sheet Rev. 1 — 4 April 2012 6 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

VCE = 2 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Tamb = 25 °C

Fig 4. DC current gain as a function of collector

current; typical values Fig 5. Collector current as a function of

collector-emitter voltage; typical values

VCE = 2 V

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig 6. Base-emitter voltage as a function of collector

current; typical values Fig 7. Base-emitter saturation voltage as a function of

collector current; typical values

400

800

1200

200

600

1000

mhc082

10−11

hFE

10 IC (mA)

102103

(1)

(2)

(3)

VCE (V)

054231

006aac996

0.4

0.8

1.2

(A)

0.0

IB (mA) = 25

22.5

2.5

7.5

10 12.5

15 17.5

200

1200

400

600

800

1000

mhc085

10−1110

VBE

(mV)

IC (mA)

102103

(1)

(2)

(3)

200

1200

400

600

800

1000

mhc084

10−1110

VBEsat

(mV)

IC (mA)

102103

(1)

(2)

(3)

Product data sheet Rev. 1 — 4 April 2012 7 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - St re ss te st qu alif ication for discrete semiconductors, and is

suitable for use in automotive applications.

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 9. Collector-emitter saturation resistance as a

function of collector current; typical values

103

102

mhc086

10−1110

VCEsat

(mV)

IC (mA)

102103

(1)

(2)

(3)

−1

mhc087

−1

CEsat

(Ω)

10 I

(mA)

(1)

(2)

(3)

Product data sheet Rev. 1 — 4 April 2012 8 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

9. Package outline

10. Soldering

Fig 10. Package outline SOT883B (DFN1006B-3)

11-11-02Dimensions in mm

0.55

0.47

0.30

0.22

0.40

0.34

0.30

0.22

0.20

0.12

0.65

0.04 max

0.35

0.65

0.55

1.05

0.95

Fig 11. Reflow soldering footprint for SOT883B (DFN1006 B-3)

1.3

0.3

0.6 0.7

0.4

0.9

0.3

(2x)

0.4

(2x)

0.25

(2x)

R0.05 (8x)

0.7

Footprint information for reflow soldering SOT883B

sot883b_fr

occupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

Product data sheet Rev. 1 — 4 April 2012 9 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS2540MB v.1 20120404 Product data sheet - -

Product data sheet Rev. 1 — 4 April 2012 10 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a de sign.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may have changed since th is document w as published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representati ons or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

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Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

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Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

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responsibility for the content in this document if provided by an inf ormation

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In no event shall NXP Semiconductors be liable for any indirect, incide ntal,

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Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

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malfunction of an NXP Semiconductors product can reasonably be expected

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damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 4 April 2012 11 of 12

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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be subject to export control regulat i ons. Export might require a prior

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Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

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12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-bus

logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE

Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia

andUCODE — are trademarks of NXP B.V.

HD Radio andHD Radio logo — are trademarks of iBiquity Digital

Corporation.

13. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

NXP Semiconductors PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 4 April 2012

Document identifier: PB SS2 54 0M B

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .7

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . .7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

13 Contact information. . . . . . . . . . . . . . . . . . . . . .11

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