DATA SH EET
Product data sheet
Supersedes data of 2001 Oct 12 2002 Mar 04
DISCRETE SEMICONDUCTORS
BAT54 series
Schottky barrier (double) diodes
bo
ok, halfpage
M3D088
2002 Mar 04 2
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes BAT54 series
FEATURES
•Low forward vo lta ge
•Guard ring protected
•Small plastic SMD package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23
small plastic SMD packa ge. Single diodes and double
diodes with differen t pinning are available.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W: Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BAT54 L4∗
BAT54A L42 or ∗V3
BAT54C L43 or ∗W1
BAT54S L44 or ∗V4
PIN DESCRIPTION
BAT54 BAT54A BAT54C BAT54S
1 a k1a1a1
2n.c. k2a2k2
3 k a1, a2k1, k2k1, a2
handbook, 2 columns
21
3
MGC421
Top view
Fig.1 Simplified outline (SOT23) and pin
configuration.
3
12
MLC36
0
3
12
MLC35
9
3
12
MLC35
8
Fig.2 Diode configuration and symbol.
3
1
2
n.
c.
MLC357
(1) BAT54 (2) BAT54A
(3) BAT54C (4) BAT54S
2002 Mar 04 3
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes BAT54 series
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).
THERMAL CHARACTE RISTICS
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous revers e voltage −30 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 −300 mA
IFSM non-repetitive peak forward current tp < 10 ms −600 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
Per device
Ptot total power dissipation Tamb ≤ 25 °C−230 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 0.1 mA 240 mV
IF = 1 mA 320 mV
IF = 10 mA 400 mV
IF = 30 mA 500 mV
IF = 100 mA 800 mV
IRreverse current VR = 25 V; see Fig.4 2μA
trr reverse recove ry time when switched from IF = 10 mA
to IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA;
see Fig.6
5ns
Cddiode capacit an ce f = 1 MHz; VR = 1 V; see Fig.5 10 pF
2002 Mar 04 4
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes BAT54 series
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
0102030
V (V)
R
10
3
IR
(μA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.4 Reverse current as a fun ction of reverse
voltage; typical values.
h
andbook, halfpage
0102030
0
5
10
15
VR (V)
Cd
(pF)
MSA891
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
Fig.6 Reverse recovery definitions.
h
andbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IRMRC129 - 1
F
r
2002 Mar 04 5
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes BAT54 series
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2002 Mar 04 6
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes BAT54 series
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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extract of th e product data given in the Limiting values and
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NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/04/pp7 Date of release: 2002 Mar 04 Docum ent order numbe r: 9397 750 09408
