© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 150 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ150 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C (Chip Capability) 360 A
IL(RMS) External Lead Current Limit 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 900 A
IATC= 25°C 100 A
EAS TC= 25°C TBD J
PDTC= 25°C 1670 W
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 150 V
VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS= 0V 50 μA
TJ = 150°C 5 mA
RDS(on) VGS = 10V, ID = 60A, Note 1 4.0 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK360N15T2
IXFX360N15T2
VDSS = 150V
ID25 = 360A
RDS(on) ≤≤
≤≤
≤ 4.0mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 150ns
DS100181(08/09)
G = Gate D = Drain
S = Source TAB = Drain
PLUS247 (IXFX)
TO-264 (IXFK)
S
G
D(TAB)
(TAB)
Features
zInternational Standard Packages
zHigh Current Handling Capability
zFast Intrinsic Diode
zAvalanche Rated
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSynchronous Recification
zDC-DC Converters
zBattery Chargers
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
Advance Technical Information
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 140 230 S
Ciss 47.5 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 3060 pF
Crss 665 pF
td(on) 50 ns
tr 170 ns
td(off) 115 ns
tf265 ns
Qg(on) 715 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 185 nC
Qgd 200 nC
RthJC 0.09 °C/W
RthCS 0.15 °C/W
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-264 (IXFK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 360 A
ISM Repetitive, Pulse Width Limited by TJM 1440 A
VSD IF = 60A, VGS = 0V, Note 1 1.2 V
trr 150 ns
QRM 0.50 μC
IRM 9.00 A
IF = 160A, -di/dt = 100A/μs
VR = 60V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK360N15T2
IXFX360N15T2
Fi g . 1. Output Ch ar acter i sti c s
@ T
J
= 25ºC
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ T
J
= 150ºC
0
50
100
150
200
250
300
350
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5
V
6
V
4
V
Fig. 4. R
DS(on)
No r mal i z ed to I
D
= 180A Valu e vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 360A
I
D
= 180A
Fig. 5. R
DS(on)
No r mal i z ed to I
D
= 180A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 50 100 150 200 250 300 350
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. D r ai n C u rren t vs. C ase Temp er atu r e
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fi g . 2. Extend ed Ou tp u t Char acter i sti cs
@ T
J
= 25ºC
0
50
100
150
200
250
300
350
012345678910
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
4V
5V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
350
400
450
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s - Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
In tr i n si c D i o d e
0
50
100
150
200
250
300
350
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600 700 800
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 180A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r war d -Bias Safe Oper atin g Area
0.1
1.0
10.0
100.0
1,000.0
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
100ms
External Lead Limit
DC
IXYS REF:F_360N15T2(9V)8-19-09
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK360N15T2
IXFX360N15T2
Fig . 14. R esistive Turn -o n
Ri se Ti me vs. D r ai n C u r r ent
60
100
140
180
220
260
300
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 75V
Fig . 15. R esistive Turn -o n
Switchin g Times vs. Gate Resistance
0
100
200
300
400
500
600
700
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
30
60
90
120
150
180
210
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 100A
I
D
= 200A
Fi g . 16. R esistive Turn -o ff
Switc hing Ti mes vs. Juncti o n Te mp eratur e
0
100
200
300
400
500
600
700
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
80
100
120
140
160
180
200
220
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 75V
I
D
= 100A
I
D
= 200A
Fig . 17. R esistive Turn -o ff
Switch i ng Ti me s vs. D r ai n C u r r en t
0
100
200
300
400
500
600
700
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
100
120
140
160
180
200
220
240
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC
T
J
= 125ºC
Fig. 13. Resistive Turn -on
Rise Time vs. Juncti on Temp eratur e
100
140
180
220
260
300
340
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 75V
I
D
= 200A
I
D
= 100A
Fi g . 18. R esistive Tu r n - o ff
Switch ing Ti mes vs. Ga te R esi stan c e
100
200
300
400
500
600
700
800
900
12345678910
R
G
- Ohms
t
f
- Nanoseconds
100
200
300
400
500
600
700
800
900
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 200A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
IXYS REF:F_360N15T2(9V)8-19-09
Fig. 19. Maxim um T ransient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
