SN74HC14DR**CH-ATL - TEXAS INSTRUMENTS

January 2012 Doc ID 8981 Rev 4 1/16

STP9NK65Z

STP9NK65ZFP

N-channel 650 V, 1 Ω, 6.4 A, TO-220, TO-220FP

Zener-protected SuperMESH™ Power MOSFET

Features

■100% avalanche tested

■Low input capacitance and gate charge

■Low gate input resistance

■Extremely high dv/dt and avalanche

capabilities

Applications

■Switching applications

Description

These devices are N-channel Zener-protected

Power MOSFETs developed using

STMicroelectronics' SuperMESH™ technology,

achieved through optimization of ST's well

established strip-based PowerMESH™ layout. In

addition to a significant reduction in on-

resistance, this device is designed to ensure a

high level of dv/dt capability for the most

demanding applications.

Figure 1. Internal schematic diagram

Order codes VDSS

RDS(on)

max. IDPw

STP9NK65Z 650 V < 1.2 Ω6.4 A 125 W

STP9NK65ZFP 650 V < 1.2 Ω6.4 A 30 W

TO-220 TO-220FP

123

Table 1. Device summary

Order codes Marking Package Packaging

STP9NK65Z P9NK65Z TO-220 Tube

STP9NK65ZFP P9NK65ZFP TO-220FP Tube

www.st.com

Contents STP9NK65Z, STP9NK65ZFP

2/16 Doc ID 8981 Rev 4

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

STP9NK65Z, STP9NK65ZFP Electrical ratings

Doc ID 8981 Rev 4 3/16

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter

Value

Unit

TO-220 TO-220FP

VDS Drain-source voltage (VGS = 0) 650 V

VGS Gate- source voltage ± 30 V

IDDrain current (continuous) at TC = 25 °C 6.4 6.4 (1)

1. Limited only by maximum temperature allowed

IDDrain current (continuous) at TC = 100 °C 4 4(1) A

IDM (2)

2. Pulse width limited by safe operating area

Drain current (pulsed) 25.6 25.6 (1) A

PTOT Total dissipation at TC = 25 °C 125 30 W

Derating factor 1 0.24 W/°C

VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 kΩ) 4000 V

dv/dt (3)

3. ISD ≤ 6.4 A, di/dt ≤ 200 A/µs, VDD ≤ 80%V(BR)DSS

Peak diode recovery voltage slope 4.5 V/ns

VISO Insulation withstand voltage (DC) - 2500 V

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol Parameter

Value

Unit

TO-220 TO-220FP

Rthj-case Thermal resistance junction-case max 1 4.2 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

TlMaximum lead temperature for soldering purpose 300 °C

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)6.4 A

EAS

Single pulse avalanche energy

(starting Tj=25 °C, ID=IAR, VDD=50 V) 200 mJ

Electrical characteristics STP9NK65Z, STP9NK65ZFP

4/16 Doc ID 8981 Rev 4

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA 650 V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, @125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0) VGS = ± 20 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V

RDS(on)

Static drain-source on

resistance VGS = 10 V, ID = 3.2 A 1 1.2 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward

transconductance VDS = 15 V, ID= 3.2 A - 6 - S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 -

1145

130

Coss eq(2).

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance VGS = 0, VDS = 0 to 400 V - 55 - pF

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 6.4 A,

VGS = 10 V

(see Figure 3)

7.5

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

Turn-on delay time

Rise time

VDD = 325 V, ID = 3.2 A

RG=4.7 Ω VGS = 10 V

(see Figure 2)

-20

12 -ns

td(off)

Turn-off delay time

Fall time

VDD = 325 V, ID = 3.2 A

RG=4.7 Ω VGS = 10 V

(See Figure 2)

-45

15 -ns

STP9NK65Z, STP9NK65ZFP Electrical characteristics

Doc ID 8981 Rev 4 5/16

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM (1)

1. Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed) -6.4

25.6

VSD (2)

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 6.4 A, VGS = 0 - 1.6 V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 6.4 A,

di/dt = 100 A/µs

VDD = 50 V, Tj = 150 °C

(see Figure 4)

400

2600

Table 9. Gate-source zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

BVGSO(1)

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Gate-source breakdown voltage Igs=±1 mA

(open drain) 30 - - V

Test circuits STP9NK65Z, STP9NK65ZFP

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3 Test circuits

Figure 2. Switching times test circuit for

resistive load

Figure 3. Gate charge test circuit

Figure 4. Test circuit for inductive load

switching and diode recovery times

Figure 5. Unclamped Inductive load test

circuit

Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform

STP9NK65Z, STP9NK65ZFP Test circuits

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3.1 Electrical characteristics (curves)

Figure 8. Safe operating area for TO-220 Figure 9. Thermal impedance for TO-220

Figure 10. Safe operating area for TO-220FP Figure 11. Thermal impedance for TO-220FP

Figure 12. Output characteristics Figure 13. Transfer characteristics

Test circuits STP9NK65Z, STP9NK65ZFP

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Figure 14. Transconductance Figure 15. Static drain-source on resistance

Figure 16. Gate charge vs gate-source voltage Figure 17. Capacitance variations

Figure 18. Normalized gate threshold voltage

vs temperature

Figure 19. Normalized on resistance vs

temperature

STP9NK65Z, STP9NK65ZFP Test circuits

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Figure 20. Source-drain diode forward

characteristics

Figure 21. Normalized BVDSS vs temperature

Figure 22. Maximum avalanche energy vs

temperature

Package mechanical data STP9NK65Z, STP9NK65ZFP

10/16 Doc ID 8981 Rev 4

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

STP9NK65Z, STP9NK65ZFP Package mechanical data

Doc ID 8981 Rev 4 11/16

Table 10. TO-220 type A mechanical data

Dim.

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

Package mechanical data STP9NK65Z, STP9NK65ZFP

12/16 Doc ID 8981 Rev 4

Figure 23. TO-220 type A drawing

0015988_typeA_Rev_S

STP9NK65Z, STP9NK65ZFP Package mechanical data

Doc ID 8981 Rev 4 13/16

Table 11. TO-220FP mechanical data

Dim.

Min. Typ. Max.

A4.4 4.6

B2.5 2.7

D 2.5 2.75

E0.45 0.7

F0.75 1

F1 1.15 1.70

F2 1.15 1.70

G4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

Package mechanical data STP9NK65Z, STP9NK65ZFP

14/16 Doc ID 8981 Rev 4

Figure 24. TO-220FP drawing

7012510_Rev_K

Dia

L6 L5

F1 F2

STP9NK65Z, STP9NK65ZFP Revision history

Doc ID 8981 Rev 4 15/16

5 Revision history

Table 12. Document revision history

Date Revision Changes

11-Sep-2006 2 Complete version

19-Dec-2007 3 The document has been reformatted

26-Jan-2012 4

– Minor text changes

– Modified: Features in cover page

– Updated: Section 4: Package mechanical data

STP9NK65Z, STP9NK65ZFP

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