@vic SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 TRANSISTOR (PNP) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: -0.6 A Collector-base voltage -160 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.3 1. 9 PCM: 1. 0 - Power dissipation Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 A, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -5 V Collector cut-off current ICBO VCB=-120V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A HFE(1) VCE= -5V, IC= -1mA 80 HFE(2) VCE= -5V, IC=-10mA 100 HFE(3) VCE= -5V, IC=-50mA 50 VCE(sat) IC=-50mA, IB= -5mA -0.5 V VBE(sat) IC= -50mA, IB= -5mA -1 V DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency DEVICE MARKING MMBT5401LT1=2L saturation fT VCE= -5V, IC= -10mA f=30MHz 100 200 MHz