EGP30A thru EGP30G Vishay Semiconductors Glass Passivated Ultrafast Rectifier (R) Major Ratings and Characteristics IF(AV) 3.0 A VRRM 50 V to 400 V IFSM 125 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 C d* e t n Pate GP20 *Glass Encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 Features Mechanical Data * * * * * * * Case: GP20, molded epoxy over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current Low switching losses, high efficiency High forward surge capability Solder Dip 260 C, 40 seconds Typical Applications For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and Telecommunication Maximum Ratings TA = 25 C unless otherwise specified Parameter Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G Unit Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A TJ,TSTG - 65 to + 150 C Operating and storage temperature range Document Number 88584 10-Aug-05 V www.vishay.com 1 EGP30A thru EGP30G Vishay Semiconductors Electrical Characteristics TA = 25 C unless otherwise specified Parameter Test condition Maximum instantaneous forward voltage Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G at 3.0 A 0.95 VF 1.25 Unit V Maximum DC reverse current TA = 25 C at rated DC blocking voltage TA = 125 C IR 5.0 100 A Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 ns Typical junction capacitance at 4.0 V, 1 MHz CJ 85 75 pF Thermal Characteristics TA = 25 C unless otherwise specified Parameter Typical thermal resistance (1) Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G Unit RJA RJL 20 8.0 C/W Notes: (1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted Ratings and Characteristics Curves 3.0 Resistive or Inductive Load 0.375" (9.5mm) Lead Length 2.0 1.0 175 TJ = TJ max. 8.3 ms Single Half Sine-Wave 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 Ambient Temperature ( C) Figure 1. Maximum Forward Current Derating Curve www.vishay.com 2 Peak Forward Surge Current (A) Average Forward Rectified Current (A) (TA = 25 C unless otherwise noted) 1 10 100 Number of Cycles at 60 Hz Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 88584 10-Aug-05 EGP30A thru EGP30G Vishay Semiconductors 210 TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 180 10 TJ = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 50 TJ = 25 C 1 Pulse Width = 300 s 1% Duty Cycle 0.1 0.01 0.2 150 120 90 60 30 EGP30A -- EGP30D EGP30A - EGP30D EGP30F EGP30F&&EGP30G EGP30G EGP30A -- EGP30D EGP30F & EGP30G 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 10 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 1000 Figure 5. Typical Junction Capacitance 100 100 Transient Thermal Impedance ( C/W) Instantaneous Reverse Leakage Current (A) 100 Reverse Voltage (V) TJ = 150C 10 TJ = 125C 1 TJ = 75C 0.1 TJ = 25C 0.01 10 1 0.1 0.01 0.001 0 20 40 60 100 80 Percent of Rated Peak Reverse Voltage (%) 0.1 1 10 100 t, Pulse Duration (sec.) Figure 4. Typical Reverse Leakage Characteristics Figure 6. Typical Transient Thermal Impedance Package outline dimensions in inches (millimeters) GP20 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.037 (0.94) DIA. Document Number 88584 10-Aug-05 www.vishay.com 3