EGP30A thru EGP30G
Document Number 88584
10-Aug-05
Vishay Semiconductors
www.vishay.com
1
P
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t
e
n
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d
*
®
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
GP20
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV) 3.0 A
VRRM 50 V to 400 V
IFSM 125 A
trr 50 ns
VF0.95 V, 1.25 V
Tj max. 150 °C
Features
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260° C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Mechanical Data
Case: GP20, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G Unit
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM 125 A
Operating and storage temperature range TJ,TSTG - 65 to + 150 °C
www.vishay.com
2
Document Number 88584
10-Aug-05
EGP30A thru EGP30G
Vishay Semiconductors
Electrical Characteristics
TA = 25 °C unless otherwise specified
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G Unit
Maximum instantaneous
forward voltage
at 3.0 A VF 0.95 1.25 V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 125 °C
IR 5.0
100
µA
Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr 50 ns
Typical junction capacitance at 4.0 V, 1 MHz CJ 85 75 pF
Parameter Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G Unit
Typical thermal resistance (1) RθJA
RθJL
20
8.0
°C/W
Figure 1. Maximum Forward Current Derating Curve
2.0
3.0
Average Forward Rectified Current (A)
Ambient Temperature ( °C)
1.0
Resistive or Inductive Load
0.375” (9.5mm) Lead Length
0 25 50 75 100 125 150 175
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
110 100
0
25
50
75
100
125
150
175
TJ = TJ max.
8.3 ms Single Half Sine-Wave
EGP30A thru EGP30G
Document Number 88584
10-Aug-05
Vishay Semiconductors
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1
10
50
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
EGP30A - EGP30D
EGP30F & EGP30G
Pulse Width = 300 µs
1% Duty Cycle
EGP30A — EGP30D
EGP30F & EGP30G
T
J
=25°C
T
J
= 150°C
Instantaneous Reverse Leakage Current
(µA)
Percent of Rated Peak Reverse Voltage (%)
020 40 60 80
0.001
0.01
0.1
1
10
100
100
T
J
= 150°C
T
J
= 125°C
T
J
=75°C
T
J
=25°C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0
0
30
60
90
120
150
180
210
1 10 100 1000
Reverse Voltage (V)
Junction Capacitance (pF)
EGP30A — EGP30D
EGP30F & EGP30G
T
J
=25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
t, Pulse Duration (sec.)
Transient Thermal Impedance ( °C/W)
0.01 0.1 110 100
0.1
1
10
100
0.210 (5.3)
0.190 (4.8)
DIA.
0.042 (1.07)
0.037 (0.94)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
GP20
