' Discrete POWER & Signal Technologies i MARS ES TERS ne J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 ZZLPAGININ / 9SZLPAGIWIN / SZLPAGININ / ZZLP / OZEP / SZEP / lee SOT-23 Ss Mark: 6W / 6X /6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maxi mum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units Voe Drain-Gate Voltage - 30 Vv Ves Gate-Source Voltage 30 Vv lor Forward Gate Current 50 mA Ty ,Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J174 - J177 *MMBFJ175 Pp Total Device Dissipation 350 225 mW Derate above 25C 28 1.8 mW/C Rec Thermal Resistance, Junction to Case 125 CAW Resa Thermal Resistance, Junction to Ambient 357 556 CAW * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor CorporationElectrical Characteristics TA = 25C unless otherwise noted P-Channel Switch (continued) Symbol Parameter Test Conditions Min | Max | Units OFF CHARACTERISTICS Berjass Gate-Source Breakdown Voltage lg= 1.0 HA, Vos = 0 30 Vv less Gate Reverse Current Ves = 20 V, Vos = 0 1.0 nA Vesgiot) Gate-Source Cutoff Voltage Vos =-15V,Ip=-10nA J174 5.0 10 Vv J175 3.0 6.0 Vv J176 1.0 4.0 Vv J177 0.8 25 Vv ON CHARACTERISTICS loss Zero-Gate Voltage Drain Current Vos = - 15 V, leg =O J174 - 20 - 100 mA J175 - 7.0 - 60 mA J176 -2.0 - 25 mA J177 - 1.5 - 20 mA rpsion) Drain-Source On Resistance Vos < 0.1 V, Veg=0 J174 85 Q J175 125 Q J176 250 Q J177 300 Q *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% Typical Characteristics Common Drain-Source Parameter Interactions . -20 8 100 1,000 8 ~ Ta=25C = ' a TYP Vesoin=45V = 50 500 & -16 i 2 E o Zz a Vgs =0V 2 6 cE -12 Q Zz 3 a 10 100 0 Zz 8 6 a Fi Oo 5 50 3 Qa g Dss , gis @V Ds= 15V, = "4 zt gg=0 PULSED S a oc Ds@ -100 mV, V gs =0 6 a FE Vcs(oit) @ Vpg = - 15V, m o Ip=-10pA _ 0 a 1 10 2 4 -2 -3 -4 Vpg- DRAIN-SOURCE VOLTAGE (V) 2 fi ao a 5 V cs (ofr) - GATE CUTOFF VOLTAGE (V) 10 ZZLPAGININ / 9SZLPAGIWIN / SZLPAGININ / ZZLP / OZEP / SZEP / leeP-Channel Switch (continued) Typical Characteristics (continued) Transfer Characteristics oo nm Vos =-15V Vas(oin=-45V 55C 25C 125C Vesiotn = 25 - 55C 25C 425C 1s ro oO & |p -DRAIN CURRENT (mA) eo 0 1 2 3 4 Ves- GATE-SOURCE VOLTAGE (V) Normalized Drain Resistance vs Bias Voltage a oS Oo Vesiorn @ 5.0V, 10: A oa Oo rps lps= Ds 1- Ves Vasioth = NM oO oOo on l pg - NORMALIZED RESISTANCE nm 1 0 0.2 0.4 0.6 0.8 1 Ves /Vasior)- NORMALIZED GATE-SOURCE VOLTAGE (V) Transconductance vs Drain Current a Oo Vas(orn = 25V 25C on V gsiotn = &0V 55C 25C a a Vog= -15V f= 1.0 kHz g ;, - TRANSCONDUCTANCE (mmhos) oO | Oo ua -1 -10 -100 Ip -DRAIN CURRENT (mA) Transfer Characteristics a oOo Vos =-15V Vescoth = -45V - 55C a hm 25C 125C Vasiorn = 25 V oo 25C 125C Ip -DRAIN CURRENT (mA) & 0 1 2 3 4 Vgs- GATE-SOURCE VOLTAGE (V) Output Conductance vs Drain Current 1000 f= 1.0 kHz 100 V as(off) =- 4.5V a Oo V agiotn =~ 2.5V \ 2 = -0.1 -1 -10 Ip - DRAIN CURRENT (mA) D4, > OUTPUT CONDUCTANCE (# mhos) Capacitance vs Voltage 100 f =0.1-1.0 MHz Cig (V pg = -15V) Qo a Cys (Vpg = -15V) Cis (Cs )- CAPACITANCE (pF) 0 4 8 12 16 20 Vas - GATE-SOURCE VOLTAGE (V) ZZLPAGININ / 9SZLPAGIWIN / SZLPAGININ / ZZLP / OZEP / SZEP / leeP-Channel Switch (continued) Typical Characteristics (continued) Noise Voltage vs Frequency Channel Resistance vs Temperature 1000 500 F V gsiorr) =2.5V < GS Iz W S 3 z < Ww 2 V escort) =4.5V = Ww V gsioity = 80V 9 3 100 Wi = a L Z 50 DG =" < z Pr ' W= 6.0 Hz@ f= 10 Hz, 100 Hz a < = 0.2f @f> 1.0 kHz 2 ~ 10 0.01 0.1 1 10 100 50 0 50 100 150 f - FREQUENCY (kHz) T, -AMBIENT TEMPERATURE (C) Power Dissipation vs Ambient Temperature 350 w o o 250 200 a ao - POWER DISSIPATION (mW) 2 36 on oO Pp Qo 0 25 50 75 100 125 150 TEMPERATURE (C) ZZLPAGININ / 9SZLPAGIWIN / SZLPAGININ / ZZLP / OZEP / SZEP / lee