SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 95 ✪
PARTMARKING DETAIL BSS80B - CH
BSS80C - CJ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -800 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -60 V IC=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -40 V IC=-10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 IE=-10mA
Collector Cut-Off
Current
ICBO -10
-10
nA
µA
VCB
=-50V,
VCB
=-50V, Ta=150oC
Emitter Cut-Off
Current
IEBO -10 nA VBE
=-3V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.4
-1.6
mV
V
IC=-150mA,VCE
=-10V
IC=-150mA,VCE=-10V
Static Forward
Current
Transfer Ratio
BSS80B
BSS80C
hFE 40
100
120
300
IC=150mA,VCE
=10V
IC=150mA,VCE
=10V
Transition Frequency fT200 MHz VCE
=-20V,IC=-50mA
f=100MHz
Output Capacitance Cobo 8pFV
CB
=-10V,f=1MHz
Delay Time td10 ns
VCC
=-30V, IC=-150mA
IB1=-IB2=-15mA
Rise Time tr40 ns
Storage Time ts80 ns
Fall Time tf30 ns
BSS80B
BSS80C
C
B
E
SOT23
PAGE NUMBER
