BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
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NPN MEDIUM POWER TRANSISTORS IN SOT89
Features
BVCEO > 45V, 60V & 80V
Ic = 1A Continuous Collector Current
ICM = 2A Peak Pulse Current
Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
Gain Groups 10 and 16
Epitaxial Planar Die Construction
Complementary PNP Types: BCX51, 52, and 53
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Leads.
Solderable per MIL-STD-202 Method 208
Weight: 0.055 grams (Approximate)
Applications
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
Ordering Information (Notes 4 & 5)
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
AEC-Q101
BA
7
12
1,000
AEC-Q101
BC
7
12
1,000
AEC-Q101
BD
7
12
1,000
AEC-Q101
BD
13
12
4,000
AEC-Q101
BE
7
12
1,000
AEC-Q101
BG
7
12
1,000
AEC-Q101
BM
7
12
1,000
AEC-Q101
BH
7
12
1,000
AEC-Q101
BK
7
12
1,000
AEC-Q101
BL
7
12
1,000
AEC-Q101
BL
13
12
4,000
AEC-Q101
BC
13
12
4,000
AEC-Q101
BD
13
12
4,000
AEC-Q101
BA
13
12
4,000
AEC-Q101
BG
13
12
4,000
AEC-Q101
BM
13
12
4,000
AEC-Q101
BE
13
12
4,000
AEC-Q101
BK
13
12
4,000
AEC-Q101
BH
13
12
4,000
Automotive
Refer to http://diodes.com/datasheets/BCX5616Q.pdf
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Top View
Device Symbol
Top View
Pin-Out
SOT89
C
E
C
B
C
E
B
BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
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Marking Information
Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BCX54
BCX55
BCX56
Unit
Collector-Base Voltage
VCBO
45
60
100
V
Collector-Emitter Voltage
VCEO
45
60
80
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
1
A
Peak Pulse Collector Current
ICM
2
Continuous Base Current
IB
100
mA
Peak Pulse Base Current
IBM
200
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
1
W
(Note 7)
1.5
(Note 8)
2.0
Thermal Resistance, Junction to Ambient Air
(Note 6)
RθJA
125
°C/W
(Note 7)
83
(Note 8)
60
Thermal Resistance, Junction to Lead
(Note 9)
RθJL
13
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
xx = Product Type Marking Code, as follows:
BCX54 = BA BCX55 = BE BCX56 = BH
BCX5410 = BC BCX5510 = BG BCX5610 = BK
BCX5416 = BD BCX5516 = BM BCX5616 = BL
xx
SOT89
BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
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Thermal Characteristics and Derating Information
020 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0 25mm x 25mm 1oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
20
40
60
80
100
120 25mm x 25mm 1oz Cu
Tamb = 25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100 25mm x 25mm 1oz Cu
Tamb = 25°C
Single pulse
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
0500 1000 1500 2000 2500
0
1
2
3
0500 1000 1500 2000 2500
40.0
60.0
80.0
100.0
120.0
140.0
2oz copper
1oz copper
Tamb=25°C
Copper Area (sqmm)
Maximum Power (W)
2oz copper
1oz copper
Tamb=25°C
Copper Area (sqmm)
Thermal Resistance (°C/W)
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Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base
Breakdown Voltage
BCX54
BVCBO
45
—
—
V
IC = 100µA
BCX55
60
BCX56
100
Collector-Emitter
Breakdown Voltage (Note 11)
BCX54
BVCEO
45
—
—
V
IC = 10mA
BCX55
60
BCX56
80
Emitter-Base Breakdown Voltage
BVEBO
6
—
—
V
IE = 100µA
Collector Cut-Off Current
ICBO
—
—
0.1
20
µA
VCB = 30V
VCB = 30V, TA = +150°C
Emitter Cut-Off Current
IEBO
—
—
20
nA
VEB = 5V
Static Forward Current Transfer
Ratio (Note 11)
All versions
hFE
25
40
25
—
—
—
—
250
—
—
IC = 5mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, VCE = 2V
10 gain grp
63
—
160
IC = 150mA, VCE = 2V
16 gain grp
100
—
250
IC = 150mA, VCE = 2V
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
—
—
0.5
V
IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage (Note 11)
VBE(on)
—
—
1.0
V
IC = 500mA, VCE = 2V
Transition Frequency
fT
150
—
—
MHz
IC = 50mA, VCE = 10V
f = 100MHz
Output Capacitance
Cobo
—
—
25
pF
VCB = 10V, f = 1MHz
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
0.2
0.4
0.6
0.8
0 1 2 3 4 5
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I , COLLECTOR CURRENT (A)
C
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
h , DC CURRENT GAIN
FE
Fig. 2 Typical DC Current Gain vs. Collector Current
0
50
100
150
200
250
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
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I , COLLECTOR CURRENT (A)
C
V , BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.2
0.0001 0.001 0.01 0.1 1 10
1.0
I , COLLECTOR CURRENT (A)
C
V , COLLECTOR-EMITTER
SATURATION
CE(SAT) VOLTAGE (V)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.1
0.2
0.3
0.4
0.0001 0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001 0.001 0.01 0.1 1 10
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
R
Fig. 6 Typical Capacitance Characteristics
0
20
40
60
80
100
120
140
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
Fig. 7 Typical Gain-Bandwidth Product
vs. Collector Current
0
50
100
150
200
250
300
020 40 60 80 100
V = 5V
f = 100MHz
CE
BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
H1
EH
D1
B
e
c
L
A
D
8° (4X)
D2
E2
z
L1
R0.200
B1
Y4
X2
Y1
X
YY2
Y3
G
C
X1
SOT89
Dim
Min
Max
Typ
A
1.40
1.60
1.50
B
0.50
0.62
0.56
B1
0.42
0.54
0.48
c
0.35
0.43
0.38
D
4.40
4.60
4.50
D1
1.62
1.83
1.733
D2
1.61
1.81
1.71
E
2.40
2.60
2.50
E2
2.05
2.35
2.20
e
-
-
1.50
H
3.95
4.25
4.10
H1
2.63
2.93
2.78
L
0.90
1.20
1.05
L1
0.327
0.527
0.427
z
0.20
0.40
0.30
All Dimensions in mm
Dimensions
Value
(in mm)
C
1.500
G
0.244
X
0.580
X1
0.760
X2
1.933
Y
1.730
Y1
3.030
Y2
1.500
Y3
0.770
Y4
4.530
BCX54 / 55 / 56
Datasheet Number: DS35369 Rev. 8 - 2
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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