LESHAN RADIO COMP
ANY
, LTD.
7B–1/3
1N4148
1S SERIES
1SS SERIES
TYPE
V
RM
(V)
V
R
(V)
I
F
(mA)
I
O
(mA)
I
FS
(mA)
1 Sec
P(mw)
T
J
(°
C)
T
stg(°C)
Package (mm)
SWITCHING DIODES
1.
SWITCHING DIODES
TYPE
V
FMAX
(v)
@I
F
=100mA
1.20
@I
F
=100mA
1.4
@I
F
=100mA
1.4
@I
F
=100mA
1.2
@I
F
=100mA
1.2
@I
F
=100mA
0.8
ELECTRICAL CHARACTERISTICS
C
t
(pF)
max
Trr(ns)
1N4148
1S1553
1S1555
1SS133
1SS176
1SS270
100
70
35
90
35
30
75
60
30
80
30
30
450
300
300
400
300
450
150
100
100
130
100
150
700
1000
1000
600
1000
1000
- 65~+175
- 65~+150
- 65~+150
- 65~+175
- 65~+175
- 65~+175
DO-35
DO-34
@ V
R
=20V
@ V
R
=75V
0.025
5
@ V
R
=60V
0.5
@ V
R
=30V
0.5
@ V
R
=80V
0.5
@ V
R
=30V
0.5
@ V
R
=30V
1
ABSOLUTE MAXIMUM RA
TINGS
@ V
R
=0 f =1MHz
4
@ V
R
=0 f =1MHz
3.5
@ V
R
=0 f =1MHz
3.5
@ V
R
=0 f =1MHz
2
@ V
R
=0 f =1MHz
3
@ V
R
=0 f =1MHz
3
I
RMax
(
µ
A)
DO – 35
(mm)
Φ
1.8 ± 0.2
29 ± 1
3.8 ± 0.2
29 ± 1
Φ
0.5 ± 0.1
DO – 34
(mm)
Φ
1.8 ± 0.02
29 ± 1
2.7 ± 0.3
29 ± 1
Φ
0.4 ± 0.1
V
(BR)R
(v)
Min
@I
R
=5
µ
A @I
R
=100
µ
A
75
100
V
R
=6V I
F
=100mA
R
L
=100
Ω
4
500
400
400
300
300
175
150
150
175
175
175
V
R
=6V I
F
=100mA
R
L
=100
Ω
4
V
R
=6V I
F
=100mA
R
L
=100
Ω
4
V
R
=6V I
F
=100mA
R
L
=100
Ω
3.5
1N4148
1S1553
1S1555
1SS133
1SS176
1SS270
LESHAN RADIO COMP
ANY
, LTD.
7B–2/3
1N4148
1N4148 RA
TING AND CHARACTERISTIC CUR
VES
POWER DISSIP
A
TION P(mW)
I
F
– V
F
FOR
W
ARD VOL
T
AGE V
F
(V)
0
50
100
150
200
250
800
600
400
200
0
AMBIENT TEMPERA
TURE,T
a (°C)
P - T
a
POR
W
ARD CURRENT I
F
(mW)
300
100
50
30
10
5
3
1
0.5
0.3
0.1
0.2
0.4
0.6
0.8
1.0
150
125
100
75
50
25
0
T
a=25°C
REVERSE CURRENT I
F
(mW)
10
6
10
5
10
4
10
3
10
2
10
1
I
R
– V
R
0
25
50
75
100
125
REVERSE VOL
T
AGE V
R
T
a=150°C
T
a=125°C
T
a=100°C
T
a=75°C
T
a=50°C
T
a=25°C
T
a=0°C
LESHAN RADIO COMP
ANY
, LTD.
7B–3/3
1SS110
1SS265
35
35
2.
BAND SWITCHING DIODES
TYPE
V
RM
(V)
I
F
(mA)
I
O
(mA)
P (mW)
T
j
(°C)
T
stg
(°C)
Package
100
100
150
150
125
125
- 55~+125
- 55~+125
DO - 34
ABSOLUTE MAXIMUM RA
TINGS
TYPE
V
FMAX
(v)
@I
F
=10mA
1.0
@I
F
=10mA
1.0
ELECTRICAL CHARACTERISTICS
C
t
(pF)
max
R
f
(
Ω
)
max
@ V
R
=25V
0.1
@ V
R
=20V
0.1
@ V
R
=0 f =1MHz
1.2
@ V
R
=0 f =1MHz
1.5
I
RMax
(
µ
A)
V
(BR)R
(v)
Min
@I
R
=10
µ
A
35
I
F
=2mA
f =100MHz
0.9
I
F
=10mA
f =100MHz
0.6
1SS110
1SS265
L
S
(nH)
@ f =250MHz
3
DO – 34
(mm)
Φ
1.8 ± 0.02
29 ± 1
2.7 ± 0.3
29 ± 1
Φ
0.4 ± 0.1
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