MSM 4011 CMOS-Logic -4011 (C-MQS) 14-DIP 4011 (C-MQS) 14-DIP MSM 4066 CMOS-Logic 4066 (C-MOS) 14-DIP 4066 (C-MOS) 14-DIP MSM 4069 CMOS-Logic 4089 (C-MOS) 14-DIP 4069 (C-MOS} 14-DIP MT 146 Si-N =BC 146: ~36b BC 146 MT 200 Si-P =BC 200: ~36b >BC 200 MT 9630 Si-N ~MPS 9630 7 MPS 9630 MTP 3 N35 MOS-N-FET-e V-MOS, 350V, 3A, 75W, <3,302(1,5A) 17p IRF 720 17p MTP 3 Ndo MOS-N-FET-e =MTP 3N35: 400V 17p IRF 720 17p MTP 4 NAQE MOS-N-FET-e V-MOS, 400V, 4A, 74W, <1,802(2A) 17p IRF 730 17p MTP 5 P18 MOS-P-FET-e V-MOS, 180V, 5A, 50W, <10(2,5A) 17p IRF 9630 17p MTP 5 P20 MOS-P-FET-e =MTP 5P18: 200V 17p IRF 9630 17p MTP 6 P20E MOS-P-FET-e V-MOS, 200V, 6A, 75W, <12(3A) {7p IRF 9630 MTP 10 N35 MOS-N-FET-e V-MOS, 350V, 10A, 125W, <0,55(5A) 17p 2SK1378 170 MTP 10 N40(E) MOS-N-FET-e =MTP 10N35: 400V 17p 2SK1378 17p MTV 32-400A Si-Di CRT-HA, Modut-Di, 400V, 3A(ss), <22ns 3a - MTV 32-600A Si-Di CRT-HA, Modul.-Di, 600V, 3A(ss), <55ns_ Sta - MTZ 2.0...20 Z-Di 2,0...20V, #5%, 0,5W, A...De-9...44% 31a ZDiode...V 31a MTZJ 2.0...39 Z-Di 2,0...39V, #5%, 0,5W, A...D~-9...44% 31a Z-Diode...V 31a MU 10 UJT-P IpimA 7b . MU 1628 C-Di - MUR 105 Si-Di S, 5OV, 1A, <25ns 31a BYV 27/200 ta MUR 110 Si-Di =MUB 105: 100V 31a BYV.27/200 3a MUR 115 Si-Di =MUR 105: 150V 31a BYV 27/200 3ta MUR 120 Si-Di 8, 200V, 1A, <25ns 31a BY 27/200 3a MUR 130 Si-DI =MUR 120: 300V 31a UF 4007 31a MUR 140 S-Di =MUR 120: 400V, <0ns 31a UF 4007 31a MUR 150 Si-Di =MUR 120: 500V, <50ns 31a UF 4007 31a MUR 160 Si-Di =MUR 120: 600V, <50ns 31a UF 4007 Bla MUR 170 Si-Di =MUR 120: 700V, <75ns 31a UF 4007 31a MUR 180 Si-Di =MUR 120: 800V, <75ns 31a UF 4007 31a MUR 190 Si-Di 8, 900V, 1A, <75ns 3a UF 4007 31a MUR 405 Si-Di S, 50V, 4A, <25ns 31a - MUR 410 Si-Di =MUR 405: 100V 31a - MUR 415 Si-Di =MUR 405: 150V 31a . MUR 420 Si-Di 8, 200V, 4A, <25ns 31a MUR 4100 ta MUR 430 S-Di =MUR 420: 300V 31a MUR 4100 3a MUR 440 Si-Di =MUR 420: 400V 31a MUR 4100 3a MUR 450 Si-Di =MUR 420: 500V 31a MUR 4100 3a MUR 460 Si-Di S, 600V, 4A, <50ns 31a - MUR 470 Si-Di =MUR 420: 700V 3ta MUR 4100 3a MUR 480 Si-Di =MUR 420: 800V 31a MUR 4100 3a MUR 490(E) Si-Di =MUR 420: 900V 31a MUR 4100 3a MUR 1100(E) Si-Di =MUR 190: 1000V 31a UF 4007 31a MUR 4100(E) Si-Di =MUR 420: 1000V, <75ns 3la MUR 4100 3a MUR 5150 E Si-Di CRT-HA,Damper-Diode, 1500V, 5A, <175ns_17k - MUR 10120 E Si-Di CRT-GEL, 1200V, 10A(To=125), <175ns 17k - MUR 10150 Si-Di CRT-GI-L, 1500V, 10A(Tc=125), <175ns 17k MV-1 Si-St 0,58...0,65V(3mA) 31a (14148) 31a MV-2 Si-Bt 0,62....0,69V(3mA) 31a (1N4148) 31a MV-3 Si-St 0,58...0,69V(3mA) 31a (1N4148) 31a MV-4 Si-St 0,59...0,69V(10mA) 31a (1N4148) 31a MV-5 Si-St 0,58...0,66V(10mA) 31a (1N4148) 31a MV-5T Si-St 4,8...1,9(10mA) 31a Z-Diode2,1V 31a MV-5 W Si-St 1,2...1,3V(10mA) 31a Z-Diode 1,4V 3ta