(SEE REVERSE SIDE)
R0
2N5209
2N5210
NPN SILICON TRANSISTOR
TO-92 CASE
DATA SHEE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the
epitaxial planar process, designed for applications requiring high gain and low noise.
MAXIMUM RATINGS (TA=25°C)
SYMBOL
UNITS
Collector-Emitter Voltage VCEO 50 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 4.5 V
Collector Current IC 50 mA
Power Dissipation PD 350 mW
Power Dissipation (TC=25°C) PD 1.0 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
Thermal Resistance ΘJC 125 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C)
2N5209 2N5210
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=35V 50 50 nA
IEBO V
EB=3.0V 50 50 nA
BVCBO I
C=100µA 50 50 V
BVCEO I
C=1.0mA 50 50 V
VCE(SAT) I
C=10mA, IB=1.0mA 0.70 0.70 V
VBE(ON) V
CE=5.0V, IC=1.0mA 0.85 0.85 V
hFE V
CE=5.0V, IC=100µA 100 300 200 600
hFE V
CE=5.0V, IC=1.0mA 150 250
hFE V
CE=5.0V, IC=10mA 150 250
fT V
CE=5.0V, IC=500µA, f=20MHz 30 30 MHz
Ccb V
CB=5.0V, IE=0, f=100kHz 4.0 4.0 pF
hfe V
CE=5.0V, IC=1.0mA, f=1.0kHz 150 600 250 900
NF VCE=5.0V, IC=20µA, RS=22kΩ,
f=10Hz to 15.7kHz 3.0 2.0 dB
NF VCE=5.0V, IC=20µA, RS=10kΩ, f=1.0kHz 4.0 3.0 dB