SIEMENS Silicon Switching Diodes @ High-speed, high-voltage switch BAS 19 .. BAS 21 VPSOE161 Type Marking Ordering Code Pin Configuration Package) (tape and reel) BAS 19 JPs Q62702-A95 i 3. | SOT-23 BAS 20 JRs Q62702-A113 EHA07002 BAS 21 JSs Q62702-A79 Maximum Ratings Parameter Symbol Values Unit BAS 19 BAS 20 | BAS 21 Reverse voltage Va 100 150 200 Vv Peak reverse voltage Vam 120 200 250 Forward current Ir 250 mA Peak forward current TF 625 Total power dissipation, 7s = 70 C | Pret 350 mw Junction temperature Tj 150 C Storage temperature range Tsig ~ 65 ... + 150 Thermal Resistance Junction - ambient?) Risa < 300 KAW Junction - soldering point Rass < 230 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/6 cm? Cu. 204 07.94 Semiconductor GroupSIEMENS BAS 19 BAS 21 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit . | typ. | max. DC characteristics Breakdown voltage?) Ign) = 100 A BAS 19 BAS 20 BAS 21 Vier) 120 200 250 Forward voitage Ir = 100 mA Ir = 200 mA Ve Reverse current Ve = Ve max Va = Vamax, 7) = 150 C Tr - 100 - 100 nA pA AC characteristics Diode capacitance Va =OV,f= Tt MHz Co pF Reverse recovery time fe = 30 mA, fa = 30 mA, R. = 1002 measured at Jn=3mA ns Test circuit for reverse recovery time O.U.T. co 1 LE 1 te Oscilograph CHMOOO Ta Pulse generator: tp = 100ns, D=0.05 f= 0.6 ns, R= 50 Q 1) Pulse test: tps 300 us, D= 2%. Semiconductor Group Oscillograph: 205 R=50Q9 tr = 0.35 ns Cs1pFSIEMENS BAS 19 ... BAS 21 Forward current /r = f (7a*; Ts) Reverse current /a = f (Ta) * Package mounted on epoxy 300 BAS 19...21 EHBOOO26 102 BAS 19...21 EHBOO027 i HA mA fe NN { 0 200 \ 5 NN i 1 N 10 \ 5 100 107! 5 \ ~2 % 50 Too C150 10 50 100 C 150 Tsk, +- | Forward current /+ = f (VF) BAS 19...21 H800024 800 ly mA 700 600 500 400 300 200 100 0.0 0.5 1.0 Yo 1.5 e VY, Semiconductor Group Forward voltage Vr = f (7s) BAS 19...21 HB00029 1.5 as 0.5 0.0 0 100 C 200 206SIEMENS BAS 19 .. BAS 21 Reverse voltage Va = f (Ta) BAS 19...24 EHBO003! 300 100 0 30 100 = C 150 " Semiconductor Group Peak forward current Jrm = f (t) f il cit TN 198 1079 10-8 10 io? 1o-'s 10 { 207