MC74HC573ADTR2G - ON Semiconductor

May, 2011 − Rev. 13

1Publication Order Number:

MC74HC573A/D

MC74HC573A

Octal 3-State Noninverting

Transparent Latch

High−Performance Silicon−Gate CMOS

The MC74HC573A is identical in pinout to the LS573. The devices

are compatible with standard CMOS outputs; with pullup resistors,

they are compatible with LSTTL outputs.

These latches appear transparent to data (i.e., the outputs change

asynchronously) when Latch Enable is high. When Latch Enable goes

low, data meeting the setup and hold time becomes latched.

The HC573A is identical in function to the HC373A but has the data

inputs on the opposite side of the package from the outputs to facilitate

PC board layout.

Features

•Output Drive Capability: 15 LSTTL Loads

•Outputs Directly Interface to CMOS, NMOS and TTL

•Operating Voltage Range: 2.0 to 6.0 V

•Low Input Current: 1.0 mA

•In Compliance with the JEDEC Standard No. 7.0 A Requirements

•Chip Complexity: 218 FETs or 54.5 Equivalent Gates

•These Devices are Pb−Free and are RoHS Compliant

http://onsemi.com

20

1

20

MARKING

DIAGRAMS

SOIC−20

DW SUFFIX

CASE 751D

74HC573A

AWLYYWWG

HC

573A

ALYWG

G

TSSOP−20

DT SUFFIX

CASE 948E

SOEIAJ−20

F SUFFIX

CASE 967

74HC573A

AWLYWWG

1

20

1

20

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

PDIP−20

N SUFFIX

CASE 738

1

20

MC74HC573AN

AWLYYWWG

1

20

A = Assembly Location

WL, L = Wafer Lot

YY, Y = Year

WW, W = Work Week

G or G= Pb−Free Package

(Note: Microdot may be in either location)

MC74HC573A

http://onsemi.com

2

DATA

INPUTS

D0

D1

D2

D3

D4

D5

D6

D7

LATCH ENABLE

OUTPUT ENABLE

11

1

9

8

7

6

5

4

3

219

18

17

16

15

14

13

12

Q0

Q1

Q2

Q3

Q4

Q5

Q6

Q7

PIN 20 = VCC

PIN 10 = GND

NONINVERTING

OUTPUTS

D4

D2

D1

D0

OUTPUT

ENABLE

GND

D7

D6

D5

D3 5

4

3

2

1

10

9

8

7

6

14

15

16

17

18

19

20

11

12

13

Q3

Q2

Q1

Q0

VCC

LATCH

ENABLE

Q7

Q6

Q5

Q4

FUNCTION TABLE

Inputs Output

Output Latch

Enable Enable D Q

LHHH

LHLL

L L X No Change

HXXZ

X = Don’t Care

Z = High Impedance

LOGIC DIAGRAM

PIN ASSIGNMENT

Design Criteria

*Equivalent to a two−input NAND gate.

Value Units

Internal Gate Count* 54.5 ea.

Internal Gate Progation Delay 1.5 ns

Internal Gate Power Dissipation 5.0 mW

Speed Power Product 0.0075 pJ

ORDERING INFORMATION

Device Package Shipping†

MC74HC573ANG SOIC−20

(Pb−Free)

18 Units / Rail

MC74HC573ADWG SOIC−20 WIDE

(Pb−Free)

38 Units / Rail

MC74HC573ADWR2G SOIC−20 WIDE

(Pb−Free)

1000 Tape & Reel

MC74HC573ADTG TSSOP−20* 75 Units / Rail

MC74HC573ADTR2G TSSOP−20* 2500 Tape & Reel

MC74HC573AFELG SOEIAJ−20

(Pb−Free)

2000 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*This package is inherently Pb−Free.

MC74HC573A

http://onsemi.com

3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Parameter

ÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎ

VCC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Supply Voltage (Referenced to GND)

ÎÎÎÎÎ

– 0.5 to + 7.0

ÎÎÎ

V

ÎÎÎÎ

Vin

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Input Voltage (Referenced to GND)

ÎÎÎÎÎ

– 0.5 to VCC + 0.5

ÎÎÎ

V

ÎÎÎÎ

Vout

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Output Voltage (Referenced to GND)

ÎÎÎÎÎ

– 0.5 to VCC + 0.5

ÎÎÎ

V

ÎÎÎÎ

Iin

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Input Current, per Pin

ÎÎÎÎÎ

±20

ÎÎÎ

mA

ÎÎÎÎ

Iout

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Output Current, per Pin

ÎÎÎÎÎ

±35

ÎÎÎ

mA

ÎÎÎÎ

ICC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Supply Current, VCC and GND Pins

ÎÎÎÎÎ

±75

ÎÎÎ

mA

ÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Power Dissipation in Still Air, Plastic DIP†

SOIC Package†

TSSOP Package†

ÎÎÎÎÎ

750

500

450

ÎÎÎ

mW

ÎÎÎÎ

Tstg

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Temperature

ÎÎÎÎÎ

– 65 to + 150

ÎÎÎ

_C

ÎÎÎÎ

TL

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature, 1 mm from Case for 10 Seconds

(Plastic DIP, TSSOP or SOIC Package)

ÎÎÎÎÎ

260

ÎÎÎ

_C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress

ratings only. Functional operation above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Operating Conditions may affect device

reliability.

†Derating −Plastic DIP: –10 mW/_C from 65_ to 125_C

SOIC Package: – 7 mW/_C from 65_ to 125_C

TSSOP Package: −6.1 mW/°C from 65_ to 125_C

RECOMMENDED OPERATING CONDITIONS

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Parameter

ÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎ

VCC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Supply Voltage (Referenced to GND)

ÎÎÎ

2.0

ÎÎÎ

6.0

ÎÎÎ

V

ÎÎÎÎ

Vin, Vout

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Input Voltage, Output Voltage (Referenced to GND)

ÎÎÎ

0

ÎÎÎ

VCC

ÎÎÎ

V

ÎÎÎÎ

TA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating Temperature, All Package Types

ÎÎÎ

– 55

ÎÎÎ

+ 125

ÎÎÎ

_C

ÎÎÎÎ

tr, tf

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Rise and Fall Time VCC = 2.0 V

(Figure 1) VCC = 4.5 V

VCC = 6.0 V

ÎÎÎ

0

ÎÎÎ

1000

500

400

ÎÎÎ

ns

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎ

Parameter

ÎÎÎÎÎÎÎÎÎ

Test Conditions

ÎÎÎ

VCC

V

ÎÎÎÎÎÎÎÎÎÎ

Guaranteed Limit

ÎÎ

Unit

ÎÎÎÎ

– 55 to

25_C

ÎÎÎÎ

v 85_C

ÎÎÎÎ

v 125_C

ÎÎÎÎ

VIH

ÎÎÎÎÎÎÎÎÎÎ

Minimum High−Level Input Voltage

ÎÎÎÎÎÎÎÎÎ

Vout = 0.1 V or VCC – 0.1 V

|Iout| v 20 mA

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎÎ

1.5

2.1

3.15

4.2

ÎÎÎÎ

1.5

2.1

3.15

4.2

ÎÎÎÎ

1.5

2.1

3.15

4.2

ÎÎ

V

ÎÎÎÎ

VIL

ÎÎÎÎÎÎÎÎÎÎ

Maximum Low−Level Input Voltage

ÎÎÎÎÎÎÎÎÎ

Vout = 0.1 V or VCC – 0.1 V

|Iout| v 20 mA

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎÎ

0.5

0.9

1.35

1.8

ÎÎÎÎ

0.5

0.9

1.35

1 8

ÎÎÎÎ

0.5

0.9

1.35

1.8

ÎÎ

V

ÎÎÎÎ

VOH

ÎÎÎÎÎÎÎÎÎÎ

Minimum High−Level Output

Voltage

ÎÎÎÎÎÎÎÎÎ

Vin = VIH or VIL

|Iout| v 20 mA

ÎÎÎ

2.0

4.5

6.0

ÎÎÎÎ

1.9

4.4

5.9

ÎÎÎÎ

1.9

4.4

5.9

ÎÎÎÎ

1.9

4.4

5.9

ÎÎ

V

ÎÎÎÎÎÎÎÎÎ

Vin = VIH or VIL |Iout| ≤ 2.4mA

|Iout| v 6.0 mA

|Iout| v 7.8 mA

ÎÎÎ

3.0

4.5

6.0

ÎÎÎÎ

2.48

3.98

5.48

ÎÎÎÎ

2.34

3.84

5.34

ÎÎÎÎ

2.2

3.7

5.2

ÎÎÎÎ

VOL

ÎÎÎÎÎÎÎÎÎÎ

Maximum Low−Level Output

Voltage

ÎÎÎÎÎÎÎÎÎ

Vout = 0.1 V or VCC – 0.1 V

|Iout| v 20 mA

ÎÎÎ

2.0

4.5

6.0

ÎÎÎÎ

0.1

ÎÎÎÎ

0.1

ÎÎÎÎ

0.1

ÎÎ

V

ÎÎÎÎÎÎÎÎÎ

Vin = VIH or VIL |Iout| ≤ 2.4mA

|Iout| v 6.0 mA

|Iout| v 7.8 mA

ÎÎÎ

3.0

4.5

6.0

ÎÎÎÎ

0.26

ÎÎÎÎ

0.33

ÎÎÎÎ

0.4

ÎÎÎÎ

Iin

ÎÎÎÎÎÎÎÎÎÎ

Maximum Input Leakage Current

ÎÎÎÎÎÎÎÎÎ

Vin = VCC or GND

ÎÎÎ

6.0

ÎÎÎÎ

±0.1

ÎÎÎÎ

±1.0

ÎÎÎÎ

±1.0

ÎÎ

mA

ÎÎÎÎ

IOZ

ÎÎÎÎÎÎÎÎÎÎ

Maximum Three−State Leakage

Current

ÎÎÎÎÎÎÎÎÎ

Output in High−Impedance State

Vin = VIL or VIH

Vout = VCC or GND

ÎÎÎ

6.0

ÎÎÎÎ

– 0.5

ÎÎÎÎ

– 5.0

ÎÎÎÎ

– 10

ÎÎ

mA

ÎÎÎÎ

ICC

ÎÎÎÎÎÎÎÎÎÎ

Maximum Quiescent Supply

Current (per Package)

ÎÎÎÎÎÎÎÎÎ

Vin = VCC or GND

IIoutI = 0 mA

ÎÎÎ

6.0

ÎÎÎÎ

4.0

ÎÎÎÎ

40

ÎÎÎÎ

160

ÎÎ

mA

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high−impedance cir-

cuit. For proper operation, Vin and

Vout should be constrained to the

range GND v (Vin or Vout) v VCC.

Unused inputs must always be

tied to an appropriate logic voltage

level (e.g., either GND or VCC).

Unused outputs must be left open.

MC74HC573A

http://onsemi.com

4

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Parameter

ÎÎÎ

VCC

V

ÎÎÎÎÎÎÎÎÎÎÎ

Guaranteed Limit

ÎÎ

Unit

ÎÎÎÎÎ

– 55 to 25_C

ÎÎÎÎ

v 85_C

ÎÎÎÎ

v 125_C

ÎÎÎÎ

tPLH,

tPHL

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Propagation Delay, Input D to Q

(Figures 1 and 5)

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎÎÎ

150

100

30

26

ÎÎÎÎ

190

140

38

33

ÎÎÎÎ

225

180

45

38

ÎÎ

ns

ÎÎÎÎ

tPLH,

tPHL

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Propagation Delay, Latch Enable to Q

(Figures 2 and 5)

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎÎÎ

160

105

32

27

ÎÎÎÎ

200

145

40

34

ÎÎÎÎ

240

190

48

41

ÎÎ

ns

ÎÎÎÎ

tPLZ,

tPHZ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Propagation Delay, Output Enable to Q

(Figures 3 and 6)

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎÎÎ

150

100

30

26

ÎÎÎÎ

190

125

38

33

ÎÎÎÎ

225

150

45

38

ÎÎ

ns

ÎÎÎÎ

tPZL,

tPZH

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Propagation Delay, Output Enable to Q

(Figures 3 and 6)

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎÎÎ

150

100

30

26

ÎÎÎÎ

190

125

38

33

ÎÎÎÎ

225

150

45

38

ÎÎ

ns

ÎÎÎÎ

tTLH,

tTHL

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Output Transition Time, Any Output

(Figures 1 and 5)

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎÎÎ

60

27

12

10

ÎÎÎÎ

75

32

15

13

ÎÎÎÎ

90

36

18

15

ÎÎ

ns

ÎÎÎÎ

Cin

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Input Capacitance

ÎÎÎÎÎ

10

ÎÎÎÎ

10

ÎÎÎÎ

10

ÎÎ

pF

ÎÎÎÎ

Cout

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum 3−State Output Capacitance (Output in High−Impedance State)

ÎÎÎÎÎ

15

ÎÎÎÎ

15

ÎÎÎÎ

15

ÎÎ

pF

CPD Power Dissipation Capacitance (Per Enabled Output)*

Typical @ 25°C, VCC = 5.0 V

pF

23

* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Parameter

ÎÎÎ

Figure

ÎÎÎ

VCC

V

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Guaranteed Limit

ÎÎ

Unit

ÎÎÎÎÎ

– 55 to 25_C

ÎÎÎÎÎ

v 85_C

ÎÎÎÎÎ

v 125_C

ÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎÎ

tsu

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Minimum Setup Time, Input D to Latch Enable

ÎÎÎ

4

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎ

50

40

10

9.0

ÎÎÎ

65

50

13

11

ÎÎÎ

75

60

15

13

ÎÎÎ

ÎÎ

ns

ÎÎÎÎ

th

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Minimum Hold Time, Latch Enable to Input D

ÎÎÎ

4

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎ

5.0

ÎÎÎ

5.0

ÎÎÎ

5.0

ÎÎÎ

ÎÎ

ns

ÎÎÎÎ

tw

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Minimum Pulse Width, Latch Enable

ÎÎÎ

2

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎ

75

60

15

13

ÎÎÎ

95

80

19

16

ÎÎÎ

110

90

22

19

ÎÎÎ

ÎÎ

ns

ÎÎÎÎ

tr, tf

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Input Rise and Fall Times

ÎÎÎ

1

ÎÎÎ

2.0

3.0

4.5

6.0

ÎÎÎ

1000

800

500

400

ÎÎÎ

1000

800

500

400

ÎÎÎ

1000

800

500

400

ÎÎ

ns

MC74HC573A

http://onsemi.com

5

SWITCHING WAVEFORMS

VCC

GND

tf

tr

INPUT D

Q

10%

50%

90%

10%

50%

90%

tTLH

tPLH tPHL

tTHL

OUTPUT

ENABLE

Q

50%

VM

90%

10%

tPZL tPLZ

tPZH tPHZ

VCC

GND

HIGH

IMPEDANCE

VOL

VOH

HIGH

IMPEDANCE

*Includes all probe and jig capacitance

CL*

TEST POINT

DEVICE

UNDER

TEST

OUTPUT

*Includes all probe and jig capacitance

CL*

TEST POINT

DEVICE

UNDER

TEST

OUTPUT

CONNECT TO VCC WHEN

TESTING tPLZ AND tPZL.

CONNECT TO GND WHEN

TESTING tPHZ AND tPZH.

1 kW

Figure 1. Figure 2.

VCC

GND

50%

LATCH

ENABLE

tPLH tPHL

Q

tw

Figure 3. Figure 4.

D

LE Q

D0 219 Q0

D

LE Q

D1 318 Q1

D

LE Q

D2 417 Q2

D

LE Q

D3 516 Q3

D

LE Q

D4 615 Q4

D

LE Q

D5 714 Q5

D

LE Q

D6 813 Q6

D

LE Q

D7 912 Q7

LATCH ENABLE

OUTPUT ENABLE

11

1

VCC

GND

VCC

GND

50%

VALID

tSU th

INPUT D

LATCH

ENABLE

Figure 5. Test Circuit

Figure 6. Test Circuit Figure 7. EXPANDED LOGIC DIAGRAM

MC74HC573A: VM = VOH x 0.5

MC74HCT573A: VM = 1.3 V @ VCC = 3 V

MC74HC573A

http://onsemi.com

6

PACKAGE DIMENSIONS

PDIP−20

N SUFFIX

CASE 738−03

ISSUE E

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEAD WHEN

FORMED PARALLEL.

4. DIMENSION B DOES NOT INCLUDE MOLD

FLASH.

M

L

J20 PL

M

B

M

0.25 (0.010) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A25.66 27.171.010 1.070

B6.10 6.600.240 0.260

C3.81 4.570.150 0.180

D0.39 0.550.015 0.022

G2.54 BSC0.100 BSC

J0.21 0.380.008 0.015

K2.80 3.550.110 0.140

L7.62 BSC0.300 BSC

M0 15 0 15

N0.51 1.010.020 0.040

____

E

1.27 1.770.050 0.070

1

11

10

20

−A−

SEATING

PLANE

K

N

FG

D20 PL

−T−

M

A

M

0.25 (0.010) T

E

B

C

F

1.27 BSC0.050 BSC

SOIC−20

DW SUFFIX

CASE 751D−05

ISSUE G

20

1

11

10

B20X

H10X

C

L

18X A1

A

SEATING

PLANE

q

hX 45_

E

D

M

0.25 M

B

M

0.25 S

AS

B

T

eT

B

A

DIM MIN MAX

MILLIMETERS

A2.35 2.65

A1 0.10 0.25

B0.35 0.49

C0.23 0.32

D12.65 12.95

E7.40 7.60

e1.27 BSC

H10.05 10.55

h0.25 0.75

L0.50 0.90

q0 7

NOTES:

1. DIMENSIONS ARE IN MILLIMETERS.

2. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M, 1994.

3. DIMENSIONS D AND E DO NOT INCLUDE MOLD

PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.

5. DIMENSION B DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE PROTRUSION

SHALL BE 0.13 TOTAL IN EXCESS OF B

DIMENSION AT MAXIMUM MATERIAL

CONDITION.

__

MC74HC573A

http://onsemi.com

7

PACKAGE DIMENSIONS

TSSOP−20

DT SUFFIX

CASE 948E−02

ISSUE C

DIM

A

MIN MAX MIN MAX

INCHES

6.60 0.260

MILLIMETERS

B4.30 4.50 0.169 0.177

C1.20 0.047

D0.05 0.15 0.002 0.006

F0.50 0.75 0.020 0.030

G0.65 BSC 0.026 BSC

H0.27 0.37 0.011 0.015

J0.09 0.20 0.004 0.008

J1 0.09 0.16 0.004 0.006

K0.19 0.30 0.007 0.012

K1 0.19 0.25 0.007 0.010

L6.40 BSC 0.252 BSC

M0 8 0 8

____

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION:

MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE

MOLD FLASH, PROTRUSIONS OR GATE

BURRS. MOLD FLASH OR GATE BURRS

SHALL NOT EXCEED 0.15 (0.006) PER SIDE.

4. DIMENSION B DOES NOT INCLUDE

INTERLEAD FLASH OR PROTRUSION.

INTERLEAD FLASH OR PROTRUSION

SHALL NOT EXCEED 0.25 (0.010) PER SIDE.

5. DIMENSION K DOES NOT INCLUDE

DAMBAR PROTRUSION. ALLOWABLE

DAMBAR PROTRUSION SHALL BE 0.08

(0.003) TOTAL IN EXCESS OF THE K

DIMENSION AT MAXIMUM MATERIAL

CONDITION.

6. TERMINAL NUMBERS ARE SHOWN FOR

REFERENCE ONLY.

7. DIMENSION A AND B ARE TO BE

DETERMINED AT DATUM PLANE −W−.

ÍÍÍÍ

110

1120

PIN 1

IDENT

A

B

−T−

0.100 (0.004)

C

DGH

SECTION N−N

K

K1

JJ1

N

M

F

−W−

SEATING

PLANE

−V−

−U−

S

U

M

0.10 (0.004) V S

T

20X REFK

L

L/2

2X

S

U0.15 (0.006) T

DETAIL E

0.25 (0.010)

DETAIL E 6.40 0.252

--- ---

S

U0.15 (0.006) T

7.06

16X

0.36 16X

1.26

0.65

DIMENSIONS: MILLIMETERS

1

PITCH

SOLDERING FOOTPRINT

MC74HC573A

http://onsemi.com

8

PACKAGE DIMENSIONS

SOEIAJ−20

F SUFFIX

CASE 967−01

ISSUE A

DIM MIN MAX MIN MAX

INCHES

--- 2.05 --- 0.081

MILLIMETERS

0.05 0.20 0.002 0.008

0.35 0.50 0.014 0.020

0.15 0.25 0.006 0.010

12.35 12.80 0.486 0.504

5.10 5.45 0.201 0.215

1.27 BSC 0.050 BSC

7.40 8.20 0.291 0.323

0.50 0.85 0.020 0.033

1.10 1.50 0.043 0.059

0

0.70 0.90 0.028 0.035

--- 0.81 --- 0.032

A1

HE

Q1

LE

_10 _0

_10 _

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS D AND E DO NOT INCLUDE

MOLD FLASH OR PROTRUSIONS AND ARE

MEASURED AT THE PARTING LINE. MOLD FLASH

OR PROTRUSIONS SHALL NOT EXCEED 0.15

(0.006) PER SIDE.

4. TERMINAL NUMBERS ARE SHOWN FOR

REFERENCE ONLY.

5. THE LEAD WIDTH DIMENSION (b) DOES NOT

INCLUDE DAMBAR PROTRUSION. ALLOWABLE

DAMBAR PROTRUSION SHALL BE 0.08 (0.003)

TOTAL IN EXCESS OF THE LEAD WIDTH

DIMENSION AT MAXIMUM MATERIAL CONDITION.

DAMBAR CANNOT BE LOCATED ON THE LOWER

RADIUS OR THE FOOT. MINIMUM SPACE

BETWEEN PROTRUSIONS AND ADJACENT LEAD

TO BE 0.46 ( 0.018).

HE

A1

LE

Q1

_

c

A

Z

D

E

20

110

11

b

M

0.13 (0.005)

e

0.10 (0.004)

VIEW P

DETAIL P

M

L

A

b

c

D

E

e

L

M

Z

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

MC74HC573A/D

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative