TIP110 LEAD FREE - CENTRAL SEMICONDUCTOR

November, 2014 − Rev. 8

1Publication Order Number:

TIP110/D

TIP110, TIP111, TIP112

(NPN); TIP115, TIP116,

TIP117 (PNP)

Plastic Medium-Power

Complementary Silicon

Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

•High DC Current Gain −

hFE = 2500 (Typ) @ IC

= 1.0 Adc

•Collector−Emitter Sustaining Voltage − @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115

= 80 Vdc (Min) − TIP111, TIP116

= 100 Vdc (Min) − TIP112, TIP117

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.5 Vdc (Max) @ IC

= 2.0 Adc

•Monolithic Construction with Built−in Base−Emitter Shunt Resistors

•Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

MARKING

DIAGRAM

DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 50 WATTS

www.onsemi.com

123

TIP11x = Device Code

x = 0, 1, 2, 5, 6, or 7

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

TIP11xG

AYWW

See detailed ordering and shipping information on page 3 of

this data sheet.

ORDERING INFORMATION

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol

TIP110,

TIP115

TIP111,

TIP116

TIP112,

TIP117 Unit

Collector−Emitter Voltage VCEO 60 80 100 Vdc

Collector−Base Voltage VCB 60 80 100 Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current −Continuous

−Peak

IC2.0

4.0

Adc

Base Current IB50 mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD50

0.4

W/°C

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD2.0

0.016

W/°C

Unclamped Inductive Load Energy − Figure 13 E 25 mJ

Operating and Storage Junction TJ, Tstg –65 to +150 °C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0) TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP110, TIP115

(VCE = 40 Vdc, IB = 0) TIP111, TIP116

(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117

ICEO

−

2.0

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP110, TIP115

(VCB = 80 Vdc, IE = 0) TIP111, TIP116

(VCB = 100 Vdc, IE = 0) TIP112, TIP117

ICBO

−

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO −2.0 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

hFE

1000

500

−

Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) −2.5 Vdc

Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) −2.8 Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 − −

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

Cob

−

200

100

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

www.onsemi.com

Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

BASE

EMITTER

COLLECTOR

≈8.0 k ≈120

ORDERING INFORMATION

Device Package Shipping

TIP110 TO−220 50 Units / Rail

TIP110G TO−220

(Pb−Free)

50 Units / Rail

TIP111 TO−220 50 Units / Rail

TIP111G TO−220

(Pb−Free)

50 Units / Rail

TIP112 TO−220 50 Units / Rail

TIP112G TO−220

(Pb−Free)

50 Units / Rail

TIP115 TO−220 50 Units / Rail

TIP115G TO−220

(Pb−Free)

50 Units / Rail

TIP116 TO−220 50 Units / Rail

TIP116G TO−220

(Pb−Free)

50 Units / Rail

TIP117 TO−220 50 Units / Rail

TIP117G TO−220

(Pb−Free)

50 Units / Rail

00 20 40 60 80 100 120 160

Figure 2. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

140

2.0

1.0

3.0

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

www.onsemi.com

Figure 3. Switching Times Test Circuit

4.0

0.04

Figure 4. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

2.0

1.0

0.8

0.2

0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0

0.6

PNP

NPN

td @ VBE(off) = 0

approx

+8.0 V

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 ms

51 D1

+4.0 V

VCC

-30 V

TUT

≈ 8.0 k ≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

0.4

IB1 = IB2

TJ = 25°C

Figure 5. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZqJC(t) = r(t) RqJC

RqJC = 2.5°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

www.onsemi.com

1.0

Figure 6. TIP115, 116, 117

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1

10 60 80 100

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

IC, COLLECTOR CURRENT (AMPS)

TJ = 150°Cdc

1ms

TIP115

TIP116

TIP117

SECONDARY BREAKDOWN LIMITED

5ms

CURVES APPLY BELOW

RATED VCEO

1.0

Figure 7. TIP110, 111, 112

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1 10 80 100

IC, COLLECTOR CURRENT (AMPS)

TIP110

TIP111

TIP112

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

TJ = 150°C

SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

ACTIVE−REGION SAFE−OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 6 and 7 is based on TJ(pk) = 150°C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150°C. TJ(pk) may be calculated from the data in Figure 5.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2

C, CAPACITANCE (pF)

TC = 25°C

Cib

Cob

PNP

NPN

Figure 8. Capacitance

100

6.0 10 20

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

www.onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

6.0 k

0.04

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

hFE, DC CURRENT GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4

NPN

TIP110, 111, 112

PNP

TIP115, 116, 117

Figure 10. Collector Saturation Region

3.4

0.1

IB, BASE CURRENT (mA)

0.6

0.2 1.0 2.0 20 100

1.8

IC =

0.5 A

TJ = 25°C

1.0 A

2.6

3.0

0.5 5.0

2.2

0.04

IC, COLLECTOR CURRENT (AMP)

0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 11. “On” Voltages

VBE @ VCE = 3.0 V

4.0 k

3.0 k

TJ = 125°C

25°C

-55°C

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 125°C

25°C

-55°C

1.4

2.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

2.0

0.4

6.0 k

0.04

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

1.0 k

2.0 k

0.4

4.0 k

3.0 k

2.0

2.2

1.0

4.0 A

3.4

0.1

0.6

0.2 1.0 2.0 20 100

1.8

2.6

3.0

0.5 5.0 50

1.4

2.2

1.0

IC =

0.5 A 1.0 A 2.0 A 4.0 A

2.2

0.04 0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2 0.4

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

www.onsemi.com

Figure 12. Temperature Coefficients

NPN

TIP110, 111, 112

PNP

TIP115, 116, 117

Figure 13. Collector Cut-Off Region

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-0.8

-1.6

-2.4

-3.2

-4.0

-4.8

*APPLIES FOR IC/IB ≤ hFE/3

*qVC for VCE(sat)

qVC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

25°C to 150°C

-55°C to 25°C

0.1

25°C to 150°C

-55°C to 25°C

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-0.8

-1.6

-2.4

-3.2

-4.0

-4.8

*APPLIES FOR IC/IB ≤ hFE/3

*qVC for VCE(sat)

qVC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

25°C to 150°C

-55°C to 25°C

0.1

25°C to 150°C

-55°C to 25°C

105

-0.6

103

102

100

104

101

10-1

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT (A)μIC

105

-0.6

103

102

100

104

101

10-1

VBE, BASE‐EMITTER VOLTAGE (VOLTS)

-0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT (A)μIC

Figure 14. Inductive Load Switching

Note A: Input pulse width is increased until ICM = 0.71 A,

NPN test shown; for PNP test

reverse all polarity and use MJE224 driver.

0.71 A

0 V

-5 V

tw ≈ 3.5 ms (SEE NOTE A)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCER

0 V

20 V

100 ms

VCE(sat)

INPUT MJE254

50 W

RBB1

2kW

RBB2

100 W

VBB2 = 0

TUT

VCE MONITOR

100 mH

VCC = 20 V

MONITOR

RS =

0.1 W

TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS

VBB1 = 10 V +

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

www.onsemi.com

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed

at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation

or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets

and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each

customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,

or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which

the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or

unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

TIP110/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative