DATA SH EET
Product specification
Supersedes data of 2000 Apr 20 2000 Jul 25
DISCRETE SEMICONDUCTORS
CGD914; CGD914MI
CATV amplifier modules
handbook, halfpage
M3D252
2000 Jul 25 2
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
FEATURES
•Excellent linearity
•Extremely low noise
•Excellent return loss properties
•Rugged construction
•Gold metallization ensures excellent reliability.
APPLICATIONS
•CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies.
Both modules are electrically identical, only the pinning is
different.
PINNING - SOT115J
PIN DESCRIPTION
CGD914 CGD914MI
1 input output
2 and 3 common common
5+V
B+VB
7 and 8 common common
9 output input
handbook, halfpage
789
2351
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 45 MHz 19.75 20.25 dB
f = 870 MHz 20.2 21.5 dB
Itot total current consumption (DC) VB= 24 V 345 375 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage −30 V
ViRF input voltage −−
single tone −70 dBmV
132 channels flat −45 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C
2000 Jul 25 3
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
CHARACTERISTICS
Bandwidth 45 to 870 MHz; VB= 24 V; Tmb =35°C; ZS=Z
L=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 45 MHz 19.75 20 20.25 dB
f = 870 MHz 20.2 21 21.5 dB
SL slope straight line f = 45 to 870 MHz 0.2 1 1.5 dB
FL flatness straight line f = 45 to 100 MHz −0.25 −+0.25 dB
f = 100 to 800 MHz −0.6 −+0.4 dB
f = 800 to 870 MHz −0.45 −+0.2 dB
flatness narrow band in each 6 MHz segment −−±0.1 dB
s11 input return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 20 −−dB
f = 160 to 320 MHz 18 −−dB
f = 320 to 550 MHz 16 −−dB
f = 550 to 650 MHz 15 −−dB
f = 650 to 750 MHz 14 −−dB
f = 750 to 870 MHz 14 −−dB
f = 870 to 914 MHz 10 −−dB
s22 output return losses f = 40 to 80 MHz 21 −−dB
f = 80 to 160 MHz 21 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 19 −−dB
f = 550 to 650 MHz 18 −−dB
f = 650 to 750 MHz 17 −−dB
f = 750 to 870 MHz 16 −−dB
f = 870 to 914 MHz 14 −−dB
s21 phase response f = 50 MHz −45 −+45 deg
s12 reverse isolation RFout to RFin −−22 dB
CTB composite triple beat 79 chs; fm= 445.25 MHz; note 1 −−−76 dB
112 chs; fm= 649.25 MHz; note 2 −−−64 dB
132 chs; fm= 745.25 MHz; note 3 −−−55 dB
79 chs flat; Vo= 44 dBmV; fm= 547.25 MHz −−−73 dB
112 chs flat; Vo= 44 dBmV; fm= 745.25 MHz −−−64 dB
132 chs flat; Vo= 44 dBmV; fm= 745.25 MHz −−−60 dB
Xmod cross modulation 79 chs; fm= 55.25 MHz; note 1 −−−70 dB
112 chs; fm= 55.25 MHz; note 2 −−−62 dB
132 chs; fm= 55.25 MHz; note 3 −−−57 dB
79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−69 dB
112 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−65 dB
132 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−63 dB
2000 Jul 25 4
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
Notes
1. Vo= 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz.
2. Vo= 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz.
3. Vo= 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz).
4. fp= 55.25 MHz; Vp= 60 dBmV; fq= 493.25 MHz; Vq= 60 dBmV; measured at fp+f
q= 548.5 MHz.
5. fp= 55.25 MHz; Vp= 60 dBmV; fq= 691.25 MHz; Vq= 60 dBmV; measured at fp+f
q= 746.5 MHz.
6. fp= 55.25 MHz; Vp= 60 dBmV; fq= 805.25 MHz; Vq= 60 dBmV; measured at fp+f
q= 860.5 MHz.
7. Measured according to DIN45004B: fp= 540.25 MHz; Vp=V
o
; fq= 547.25 MHz; Vq=V
o−6 dB; fr= 549.25 MHz;
Vr=V
o−6 dB; measured at fp+f
q−f
r= 538.25 MHz.
8. Measured according to DIN45004B: fp= 740.25 MHz; Vp=V
o
; fq= 747.25 MHz; Vq=V
o−6 dB; fr= 749.25 MHz;
Vr=V
o−6 dB; measured at fp+f
q−f
r= 738.25 MHz.
9. Measured according to DIN45004B: fp= 851.25 MHz; Vp=V
o
; fq= 858.25 MHz; Vq=V
o−6 dB; fr= 860.25 MHz;
Vr=V
o−6 dB; measured at fp+f
q−f
r= 849.25 MHz.
10. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
CSO Sum composite second
order distortion (sum) 79 chs; fm= 446.5 MHz; note 1 −−−71 dB
112 chs; fm= 746.5 MHz; note 2 −−−60 dB
132 chs; fm= 860.5 MHz; note 3 −−−56 dB
79 chs flat; Vo= 44 dBmV; fm= 548.5 MHz −−−63 dB
112 chs flat; Vo= 44 dBmV; fm= 746.5 MHz −−−54 dB
132 chs flat; Vo= 44 dBmV; fm= 860.5 MHz −−−49 dB
CSO Diff composite second
order distortion (diff) 79 chs; fm= 150 MHz; note 1 −−−59 dB
112 chs; fm= 150 MHz; note 2 −−−53 dB
132 chs; fm= 150 MHz; note 3 −−−48 dB
79 chs flat; Vo= 44 dBmV; fm= 150 MHz −−−60 dB
112 chs flat; Vo= 44 dBmV; fm= 150 MHz −−−59 dB
132 chs flat; Vo= 44 dBmV; fm= 150 MHz −−−57 dB
NF noise figure f = 50 MHz −2.5 3 dB
f = 550 MHz −2.5 3 dB
f = 750 MHz −2.6 3.5 dB
f = 870 MHz −3 3.5 dB
d2second order distortion note 4 −−−60 dB
note 5 −−−54 dB
note 6 −−−50 dB
Vooutput voltage dim =−60 dB; note 7 69 −−dBmV
dim =−60 dB; note 8 66 −−dBmV
dim =−60 dB; note 9 63 −−dBmV
Itot total current
consumption (DC) note 10 345 360 375 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2000 Jul 25 5
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−60
−70
−90
−100
−80
52
48
40
36
44
400 600 800
MCD976
(1)
(2)
(3)
(4)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−60
−70
−90
−100
−80
52
48
40
36
44
400 600 800
MCD977
(1)
(2)
(3)
(4)
Fig.3 Crossmodulationasafunctionoffrequency
under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD978
(1)
(2)
(3)
(4)
Fig.4 Composite second order distortion (sum)
as a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0 1000
−50
−60
−70
−80
−90
−100
54
50
46
42
38
34
200 400
CSO
(dB) Vo
(dBmV)
f (MHz)
600 800
MCD979
(1)
(2)
(3)
(4)
Fig.5 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2000 Jul 25 6
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
handbook, halfpage
0
−60
−70
−80
−90 200
CTB
(dB)
48
44
40
36
Vo
(dBmV)
f (MHz)
1000
400 600 800
MCD980
(2)
(3)
(4)
(1)
Fig.6 Composite triple beat as a function of
frequency under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
−60
−70
−80
−90 200
Xmod
(dB)
48
44
40
36
Vo
(dBmV)
f (MHz)
1000
400 600 800
MCD981
(2)
(3)
(4)
(1)
Fig.7 Crossmodulationasafunctionoffrequency
under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD982
(2)
(3)
(4)
(1)
Fig.8 Compositesecondorderdistortion(sum)as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD983
(2)
(3)
(4)
(1)
Fig.9 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2000 Jul 25 7
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MCD984
(1)
(2)
(3)
(4)
Fig.10 Composite triple beat as a function of
frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD985
(1)
(2)
(3)
(4)
Fig.11 Crossmodulationasafunctionoffrequency
under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD986
(1) (2)
(3)
(4)
Fig.12 Compositesecondorderdistortion(sum)as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD987
(1)
(2)
(3)
(4)
Fig.13 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2000 Jul 25 8
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD988
(1)
(2)
(3)
(4)
Fig.14 Composite triple beat as a function of
frequency under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−60
−70
−90
−100
−80
48
44
36
32
40
400 600 800
MCD989
(1)
(2)
(3)
(4)
Fig.15 Crossmodulationasafunctionoffrequency
under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD990
(1)
(2)(3)
(4)
Fig.16 Compositesecondorderdistortion(sum)as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD991
(2)
(1)
(3)
(4)
Fig.17 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2000 Jul 25 9
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MCD992
(1)
(2)
(3)
(4)
Fig.18 Composite triple beat as a function of
frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD993
(1)
(2)
(3)
(4)
Fig.19 Crossmodulationasafunctionoffrequency
under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MCD994
(1)
(2)
(3)
(4)
Fig.20 Compositesecondorderdistortion(sum)as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0 1000
−40
−50
−60
−70
−80
−90
52
48
44
40
36
32
200 400
CSO
(dB) Vo
(dBmV)
f (MHz)
600 800
MCD995
(1)
(2)
(3)
(4)
Fig.21 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2000 Jul 25 10
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
48
44
36
32
40
400 600 800
MCD996
(1)
(2)
(3)
(4)
Fig.22 Composite triple beat as a function of
frequency under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−60
−70
−90
−100
−80
48
44
36
32
40
400 600 800
MCD997
(1)
(2)
(3)
(4)
Fig.23 Crossmodulationasafunctionoffrequency
under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD998
(1)
(2)
(3)
(4)
Fig.24 Compositesecondorderdistortion(sum)as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−40
−50
−70
−80
−60
48
44
36
32
40
400 600 800
MCD999
(1)
(2)
(3)
(4)
Fig.25 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2000 Jul 25 11
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1q2U1
max. U2W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 20.8 9.1 0.51
0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
bF
p
6-32
UNC
yw
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
U1q
q2
q1
b
F
S
A
Z p
E
A2
L
c
d
Q
U2
M
w
78923
We
e
1
5
p
1
d
max.
yMB
yMB
B
99-02-06
yMB
2000 Jul 25 12
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat anyotherconditionsabove those giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof anyofthese products,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakesno representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2000 Jul 25 13
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
NOTES
2000 Jul 25 14
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
NOTES
2000 Jul 25 15
Philips Semiconductors Product specification
CATV amplifier modules CGD914; CGD914MI
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 70
Philips Semiconductors – a world wide company
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
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Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
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Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
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Hungary: see Austria
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Tel. +91 22 493 8541, Fax. +91 22 493 0966
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Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
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Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
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Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
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04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands 613518/05/pp16 Date of release: 2000 Jul 25 Document order number: 9397 750 07288
