© 2009 IXYS CORPORATION, All Rights Reserved
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS = 500V
ID25 = 16A
RDS(on) ≤≤
≤≤
≤ 400mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200ns
DS99357F(05/09)
IXFA16N50P
IXFP16N50P
IXFH16N50P
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C16A
IDM TC= 25°C, Pulse Width Limited by TJM 35 A
IATC= 25°C16A
EAS TC= 25°C 750 mJ
dV/dt IS ≤ IDM, VDD ≤ VDSS ,T
J ≤ 150°C 10 V/ns
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 Seconds 260 °C
MdMounting Torque (TO-220 & TO-247) 1.13 / 10 Nmlb.in.
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 2.5mA 3.0 5.5 V
IGSS VGS = ± 30V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS= 0V 15 μA
TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 400 mΩ
PolarHVTM HiperFET
Power MOSFET
(TAB)
TO-263
GS
(TAB)
TO-220
D
G
S
G = Gate D = Drain
S = Source TAB = Drain
TO-247
(TAB)
GDS
Features
zInternational Standard Packages
zAvalanche Rated
zFast Intrinsic Diode
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA16N50P IXFP16N50P
IXFH16N50P
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 20V, ID = 0.5 • ID25, Note 1 9 16 S
Ciss 2480 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 237 pF
Crss 18 pF
td(on) 23 ns
tr 25 ns
td(off) 70 ns
tf 22 ns
Qg(on) 43 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25 15 nC
Qgd 12 nC
RthJC 0.42 °C/W
RthCH (TO-220) 0.50 °C/W
(TO-247) 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 16 A
ISM Repetitive, Pulse Width Limited by TJM 64 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 200 ns
IRM 6.0 A
QRM 0.6 nC
Note 1: Pulse test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Pins: 1 - Gate 2 - Drain
TO-220 (IXFP) Outline
TO-263 (IXFA) Outline
∅ P
TO-247 (IXFH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
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© 2009 IXYS CORPORATION, All Rights Reserved
IXFA16N50P IXFP16N50P
IXFH16N50P
Fi g . 1. Ou tp u t C h ar a cter i sti cs
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
0123456789
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
7V
Fi g . 2. Ou tp u t C har acter i st i cs
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20
V
DS
- V o lts
I
D
- Ampe res
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. R
DS(on)
Normalized to I
D
= 8A Valu e
vs. Ju n cti on Temper atu r e
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 16A
I
D
= 8A
Fig. 4. R
DS(on)
Normalized to I
D
= 8A Valu e
vs. D r ain C u r r ent
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 2 4 6 8 101214161820
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Input Admittance
0
2
4
6
8
10
12
14
16
18
20
4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2
V
GS
- V o lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fi g . 5. Maximum Drain C u r r ent vs.
Case Temperatu r e
0
2
4
6
8
10
12
14
16
18
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Ampe res
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA16N50P IXFP16N50P
IXFH16N50P
Fig. 7. Tr ansconductance
0
4
8
12
16
20
24
28
0 2 4 6 8 10 12 14 16 18 20
I
D
- Amperes
g f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fi g. 8. F o rwar d Vo ltag e D r op o f
Intrinsic Diode
0
10
20
30
40
50
60
70
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- Ampe res
T
J
= 125ºC
T
J
= 25ºC
Fi g . 9 . Gate C h ar ge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 8A
I
G
= 10mA
Fi g. 10. C ap acitan ce
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 11. Forward-Bias Safe Operating Area
1
10
100
10 100 1000
V
DS
- Vo lts
I
D
- Ampe res
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
Fi g . 12. Maximum Tran si en t Thermal I mp ed an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: F_16N50P(5J-745)5-1-09-C
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