MBR30100CT-E1 - BCD Semiconductor Manufacturing Limited

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

1

General Description

High voltage dual Schottky rectifier suited for switch

mode power supplies and other power converters.

This device is intended for use in medium voltage

operation, and particularly, in high frequency circuits

where low switching losses and low noise are

required.

The MBR30100C is available in standard TO-220-3,

TO-220-3 (2) and TO-220F-3 packages.

Features

• High Surge Capacity

• 150°C Operating Junction Temperature

• 30A Total (15A Per Diode Leg)

• Guard-ring for Stress Protection

• Pb-free Packages are available

Main Product Characteristics

IF(AV) 2×15A

VRRM 100V

TJ 150°C

VF(max) 0.75V

Mechanical Characteristics

• Case: Epoxy, Molded

• Epoxy Meets UL 94V-0 @ 0.125in.

• Weight (Approximately):

1.9Grams (TO-220-3, TO-220-3 (2) and

TO-220F-3)

• Finish: All External Surfaces Corrosion

Resistant and Terminal

• Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Maximum for 10 Seconds

Applications

• Power Supply Output Rectification

• Power Management

• Instrumentation

Figure 1. Package Types of MBR30100C

TO-220F-3 TO-220-3 (Optional) TO-220-3 (2)

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

2

Pin Configuration

T Package

(TO-220-3) (Optional) (TO-220-3 (2))

TF Package

(TO-220F-3)

Figure 2. Pin Configuration of MBR30100 C (Top View)

Figure 3. Internal Structure of MBR30100C

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

3

Ordering Information

MBR30100C -

Circuit Type

Part Number Marking ID

Package Lead Free Green Lead Free Green Packing

Type

TO-220-3 (2) MBR30100CT-

E1

MBR30100CT-

G1

MBR30100CT-

E1

MBR30100CT-

G1 Tube

TO-220F-3 MBR30100CTF

-E1

MBR30100CTF-

G1

MBR30100CTF-

E1

MBR30100CTF-

G1 Tube

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Products with “G1” suffix are available in green packages.

Package

T: TO-220-3 (2)

TO-220-3 (Optional)

TF: TO-220F-3

Blank: Tube

E1: Lead Free

G1: Green

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

4

Absolute Maximum Ratings (Per Diode Leg) (Note 1)

Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only, and functional operation of the device at these or any other conditions

beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute

Maximum Ratings” for extended periods may affect device reliability.

Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <

1/θJA.

Recommended Operating Conditions

Parameter Symbol Condition Value Unit

TO-220-3/

TO-220-3 (2) 2.5

θJC Junction to Case

TO-220F-3 4.5

°C/W

TO-220-3/

TO-220-3 (2) 60

Maximum Thermal Resistance

θJA Junction to

Ambient TO-220F-3 60

°C/W

Parameter Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

100 V

Average Rectified Forward Current

(Rated VR) TC=107°C IF(AV) 15 A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20kHz) TC=98°C IFRM 30 A

Non Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Half Wave, Single

Phase, 60Hz)

IFSM 200 A

Operating Junction Temperature Range (Note 2) TJ 150

°C

Storage Temperature Range TSTG -55 to 150 °C

Voltage Rate of Change (Rated VR) dv/dt 10000

V/µs

ESD (Machine Model=C) > 400 V

ESD (Human Body Model=3B) > 8000 V

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

5

Electrical Characteristics

Parameter Symbol Conditions Value Unit

IF=15A, TC=25°C 0.85

IF=15A, TC=125°C 0.75

IF=30 A, TC=25°C 0.95

Maximum Instantaneous Forward

Voltage Drop (Note 3)

VF

IF=30A, TC=125°C 0.85

V

Rated DC Voltage,

TC=125°C 6.0

Maximum Instantaneous Reverse

Current (Note 3)

IR

Rated DC Voltage,

TC=25°C 0.1

mA

Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

6

Typical Performance Characteristics

Figure 4. Typical Forward Voltage Per Diode Figure 5. Typical Reverse Current Per Diode

Figure 6. Average Forward Current vs.

Case Temperature (Square, Per Diode)

0.01

0.1

1

10

100

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

TJ=150oC

TJ=125oC

Instantaneous F orward V olt age (V )

Instantane ous Fo rw ard Current (A)

TJ=25oC

0 20406080100

0.01

0.1

1

10

100

1000

10000

TJ=150oC

TJ=125oC

Reverse Current (µA)

Reverse Voltage (V)

TJ=25oC

100 105 110 115 120 125 130 135 140 145 150 155

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30

Average Forward Current (A)

Case Temperature (oC)

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

7

Mechanical Dimensions

TO-220-3 Unit: mm(inch)

(Optional)

14.230(0.560)

1.160(0.046)

0.813(0.032)

8.763(0.345)

2.540(0.100) 0.356(0.014)

2.080(0.082)

3°

7°

3.560(0.140)

7°

9.660(0.380)

0.550(0.022)

60°

0.381(0.015)

2.580(0.102)

60°

8.520(0.335)

1.500(0.059)

0.200(0.008)

1.850(0.073)

2.540(0.100)

0.381(0.015)

0.406(0.016)

3.380(0.133)

10.660(0.420)

4.060(0.160) 1.350(0.053)

27.880(1.098)

30.280(1.192)

9.520(0.375)

16.510(0.650)

4.820(0.190)

2.880(0.113)

1.760(0.069)

3.560(0.140)

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

8

Mechanical Dimensions (Continued)

TO-220-3 (2) Unit: mm(inch)

3°

9.800(0.386)

10.200(0.402)

3.560(0.140)

3.640(0.143)

0.700(0.028)

0.900(0.035)

1.170(0.046)

1.390(0.055)

2.540(0.100)

REF 2.540(0.100)

REF

1.200(0.047)

1.400(0.055)

0.600(0.024)

REF

4.400(0.173)

4.600(0.181)

2.200(0.087)

2.500(0.098)

0.400(0.016)

0.600(0.024)

1.620(0.064)

1.820(0.072) 1.200(0.047)

1.400(0.055)

3.000(0.118)

REF

Data Sheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C

Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited

9

Mechanical Dimensions (Continued)

TO-220F-3 Unit: mm(inch)

4.300(0.169)

0.450(0.018)

0.600(0.024)

2.540(0.100)

9.700(0.382)

10.300(0.406)

6.900(0.272)

7.100(0.280)

3.000(0.119)

3.400(0.134)

14.700(0.579)

16.000(0.630)

1.000(0.039)

1.400(0.055)

1.100(0.043)

1.500(0.059)

2.790(0.110)

4.500(0.177)

12.500(0.492)

13.500(0.531)

0.550(0.022)

0.900(0.035)

2.540(0.100)

3.000(0.119)

3.550(0.140)

3.370(0.133)

3.900(0.154)

2.350(0.093)

2.900(0.114)

4.900(0.193)

IMPOR TANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any

particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Limited

800, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing Limited

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corporation

30920 Huntwood Ave. Hayward,

CA 94544, U.S.A

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- IC Design Group

Advanced Analog Circuits (Shanghai) Corporation

8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corp.

30920 Huntwood Ave. Hayward,

CA 94544, USA

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- Headquarters

BCD Semiconductor Manufacturing Limited

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Tel: +86-21-24162266, Fax: +86-21-24162277