2007-04-19
1
SMBTA42/MMBTA42
12
3
NPN Silicon High-Voltage Transistors
• Low collector-emitter saturation voltage
• Complementary types:
SMBTA92 / MMBTA92(PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBTA42/MMBTA42 s1D 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 300 V
Collector-base voltage VCBO 300
Emitter-base voltage VEBO 6
Collector current IC500 mA
Base current IB100
Total power dissipation-
TS ≤ 74 °C Ptot 360 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 210 K/W
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
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SMBTA42/MMBTA42
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 300 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 V(BR)CBO 300 - -
Emitter-base breakdown voltage
IE = 100 µA, IC = 0 V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 200 V, IE = 0
VCB = 200 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0 IEBO - - 100 nA
DC current gain1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA VCEsat - - 0.5 V
Base emitter saturation voltage1)
IC = 20 mA, IB = 2 mA VBEsat - - 0.9
AC Characteristics
Transition frequency
IC = 10 MHz, VCE = 20 V, f = 100 MHz fT50 70 - MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz Ccb - - 3 pF
1Pulse test: t < 300µs; D < 2%
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SMBTA42/MMBTA42
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00844SMBTA 42/43
10
10 mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
Operating range IC = ƒ(VCEO)
TA = 25°C, D = 0
EHP00841SMBTA 42/43
10
10 V
CEO
10
C
10
3
1
10
-1
5
10 10
10
0
5
Ι
V
mA
5
10
2
0123
555
10
100
1
100
500
DC
µ
µ
ms
ms
ms
s
s
Collector current IC = ƒ(VBE)
VCE = 10V
EHP00843SMBTA 42/43
10
0V
BE
1.5
mA
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
5
10
2
Collector cutoff current ICBO = ƒ(TA)
VCBO = 160 V
EHP00842SMBTA 42/43
10
0C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
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SMBTA42/MMBTA42
Transition frequency fT = ƒ(IC)
VCE = 10 V, f = 100 MHz
EHP00839SMBTA 42/43
10
MHz
10 10 mA
f
C
1010
T
555
Ι
0123
10
3
2
10
1
5
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
)
0
10
20
30
40
50
60
70
pF
90
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
40
80
120
160
200
240
280
320
mW
400
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00840SMBTA 42/43
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
P
DC
P
p
t
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SMBTA42/MMBTA42
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2007-04-19
6
SMBTA42/MMBTA42
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
