IPP50R350CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant; Halogen free for mold compound
• Qualified for industrial grade applications according to JEDEC1)
CoolMOS CP is designed for:
• Hard- & soft switching SMPS topologies
• CCM PFC for Lamp Ballast, LCD & PDP TV
• PWM for Lamp Ballast, LCD & PDP TV
VDS @Tjmax 550 V
RDS(on),max 0.350 W
Qg,typ 19 nC
Product Summary
Type Package Marking
IPP50R350CP PG-TO220 5R350P
PG-TO220
Rev. 2.1 page 1 2012-05-08
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=3.7 A, VDD=50 V 246 mJ
Avalanche energy, repetitive tAR2),3) EAR ID=3.7 A, VDD=50 V
Avalanche current, repetitive tAR2),3) IAR A
MOSFET dv/dtruggedness dv/dtVDS=0...400 V V/ns
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj,Tstg °C
Mounting torque M3 and M3.5 screws 60 Ncm
89
-55 ... 150
0.37
3.7
50
±20
Value
10
6
22
±30
Type Package Marking
IPP50R350CP PG-TO220 5R350P
Rev. 2.1 page 1 2012-05-08
IPP50R350CP
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current ISA
Diode pulse current2) IS,pulse 22
Reverse diode dv/dt4) dv/dt15 V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.4 K/W
RthJA leaded - - 62
Soldering temperature,
wavesoldering only allowed at leads Tsold 1.6 mm (0.063 in.)
from case for 10 s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Value
TC=25 °C 5.6
Values
Thermal resistance, junction -
ambient
Rev. 2.1 page 2 2012-05-08
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 500 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=0.37 mA 2.5 3 3.5
Zero gate voltage drain current IDSS VDS=500 V, VGS=0 V,
Tj=25 °C - - 1 µA
VDS=500 V, VGS=0 V,
Tj=150 °C - 10 -
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=5.6 A,
Tj=25 °C - 0.32 0.35 W
VGS=10 V, ID=5.6 A,
Tj=150 °C - 0.80 -
Gate resistance RGf=1 MHz, open drain - 2.2 - W
Rev. 2.1 page 2 2012-05-08
IPP50R350CP
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 1020 - pF
Output capacitance Coss - 46 -
Effective output capacitance, energy
related5) Co(er) - 43 -
Effective output capacitance, time
related6) Co(tr) - 92 -
Turn-on delay time td(on) - 35 - ns
Rise time tr- 14 -
Turn-off delay time td(off) - 80 -
Fall time tf- 12 -
Gate Charge Characteristics
Gate to source charge Qgs - 4 - nC
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=10 V, ID=5.6 A,
RG=30.9 W
VGS=0 V, VDS=0 V
to 400 V
Rev. 2.1 page 3 2012-05-08
Gate to drain charge Qgd - 6 -
Gate charge total Qg- 19 25
Gate plateau voltage Vplateau - 5.2 - V
Reverse Diode
Diode forward voltage VSD VGS=0 V, IF=5.6 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time trr - 250 - ns
Reverse recovery charge Qrr - 2.3 - µC
Peak reverse recovery current Irrm - 19 - A
1) J-STD20 and JESD22
2) Pulse width tplimited by Tj,max
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
6) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
4) ISD≤ID, di/dt≤400A/µs, VDClink=400V, Vpeak<V(BR)DSS,Tj<Tjmax, identical low and high side switch
VR=400 V, IF=IS,
diF/dt=100 A/µs
VDD=400 V, ID=5.6 A,
VGS=0 to 10 V
Rev. 2.1 page 3 2012-05-08
IPP50R350CP
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
0
20
40
60
80
100
0 25 50 75 100 125 150 175
Ptot [W]
TC[°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
100101102103
10-1
100
101
102
ID[A]
VDS [V]
limited by on-state
resistance
Rev. 2.1 page 4 2012-05-08
3 Max. transient thermal impedance 4 Typ. output characteristics
Z(thJC)=f(tp); ID=f(VDS); Tj=25 °C
parameter: D=tp/Tparameter: VGS
0
20
40
60
80
100
0 25 50 75 100 125 150 175
Ptot [W]
TC[°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
100101102103
10-1
100
101
102
ID[A]
VDS [V]
singlepulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V
20 V
0
5
10
15
20
25
30
0 5 10 15 20
ID[A]
VDS [V]
limited by on-state
resistance
Rev. 2.1 page 4 2012-05-08
IPP50R350CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V 20 V
0
3
6
9
12
15
18
0 5 10 15 20
ID[A]
VDS [V]
5.5 V
6 V
6.5 V 7 V
10 V
0.6
0.8
1
1.2
1.4
1.6
0 5 10 15 20
RDS(on) [W]
ID[A]
Rev. 2.1 page 5 2012-05-08
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=5.6 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max
parameter: Tj
typ
98 %
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-60 -20 20 60 100 140 180
RDS(on) [W]
Tj[°C]
25 °C
150 °C
0
5
10
15
20
25
30
35
0246810
ID[A]
VGS [V]
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V 20 V
0
3
6
9
12
15
18
0 5 10 15 20
ID[A]
VDS [V]
5.5 V
6 V
6.5 V 7 V
10 V
0.6
0.8
1
1.2
1.4
1.6
0 5 10 15 20
RDS(on) [W]
ID[A]
Rev. 2.1 page 5 2012-05-08
IPP50R350CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=5.6 A pulsed IF=f(VSD)
parameter: VDD parameter: Tj
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-1
100
101
102
0 0.5 1 1.5 2
IF[A]
VSD [V]
100 V
400 V
0
2
4
6
8
10
0 5 10 15 20
VGS [V]
Qgate [nC]
Rev. 2.1 page 6 2012-05-08
11 Avalanche energy 12 Drain-source breakdown voltage
EAS=f(Tj); ID=3.7 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-1
100
101
102
0 0.5 1 1.5 2
IF[A]
VSD [V]
100 V
400 V
0
2
4
6
8
10
0 5 10 15 20
VGS [V]
Qgate [nC]
440
460
480
500
520
540
560
580
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
0
50
100
150
200
250
25 75 125 175
EAS [mJ]
Tj[°C]
Rev. 2.1 page 6 2012-05-08
IPP50R350CP
13 Typ. capacitances 14 Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(VDS)
0
1
2
3
4
5
0 100 200 300 400 500
Eoss [µJ]
VDS [V]
Ciss
Coss
Crss
100
101
102
103
104
0 100 200 300 400 500
C[pF]
VDS [V]
Rev. 2.1 page 7 2012-05-08
0
1
2
3
4
5
0 100 200 300 400 500
Eoss [µJ]
VDS [V]
Ciss
Coss
Crss
100
101
102
103
104
0 100 200 300 400 500
C[pF]
VDS [V]
Rev. 2.1 page 7 2012-05-08
IPP50R350CP
Definition of diode switching characteristics
Rev. 2.1 page 8 2012-05-08Rev. 2.1 page 8 2012-05-08
IPP50R350CP
PG-TO220-3-1/PG-TO220-3-21: Outline
Rev. 2.1 page 9 2012-05-08Rev. 2.1 page 9 2012-05-08
IPP50R350CP
Published by
Infineon Technologies AG
81726 München, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein
and/or any information regarding the application of the device, Infineon Technologies hereby disclaims
any and all warranties and liabilities of any kind, including without limitation, warranties of non-
infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact the
nearest Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies
component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval
of Infineon Technologies. If a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system, or to affect the safety
Rev. 2.1 page 10 2012-05-08
failure of that life-support, automotive, aviation and aerospace device or system, or to affect the safety
or effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1 page 10 2012-05-08
