FEATURES
DTrenchFETr Power MOSFET
D175_C Junction Temperature
DPWM Optimized for High-Efficiency
D100% Rg Tested
APPLICATIONS
DSynchronous Buck Converter
- Low-Side
- Secondary Synchronous Rectifier
SUD70N02-03P
Vishay Siliconix
New Product
Document Number: 72246
S-31984—Rev. B, 13-Oct-03
www.vishay.com
1
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)a
20
0.0033 @ VGS = 10 V 39
20 0.0053 @ VGS = 4.5 V 31
D
G
S
N-Channel MOSFET
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information: SUD70N02-03P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS "20 V
Continuous Drain Currenta
TA = 25_C
ID
39a
Continuous Drain Currenta
TC= 25_CID70b
A
Pulsed Drain Current IDM 100 A
Continuous Source Current (Diode Conduction)aIS37
Maximum Power Dissipation
TA = 25_C
PD
8.3a
W
Maximum Power Dissipation TC = 25_CPD100 W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction to Ambienta
t v 10 sec
R
15 18
Maximum Junction-to-Ambienta
Steady State RthJA 40 50 _C/W
Maximum Junction-to-Case RthJC 1.2 1.5
C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
SUD70N02-03P
Vishay Siliconix New Product
www.vishay.com
2
Document Number: 72246
S-31984—Rev. B, 13-Oct-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA20
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 3.0
V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 125_C 50 mA
On-State Drain CurrentbID(on) VDS = 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 20 A 0.0026 0.0033
Drain-Source On-State ResistancebrDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C 0.0047 W
Drain Source On State Resistance
rDS(on)
VGS = 4.5 V, ID = 20 A 0.0042 0.0053
W
Forward Transconductancebgfs VDS = 15 V, ID = 20 A 15 S
Dynamica
Input Capacitance Ciss 5100
Output Capacitance Coss VGS = 0 V, VDS = 10 V, f = 1 MHz 1650 pF
Reverse Transfer Capacitance Crss 800
p
Gate Resistance Rgf = 1.0 MHz 0.5 1.1 1.8 W
Total Gate ChargecQg40 60
Gate-Source ChargecQgs VDS = 10 V, VGS = 4.5 V, ID = 50 A 14 nC
Gate-Drain ChargecQgd
VDS 10 V, VGS 4.5 V, ID 50 A
13
nC
Turn-On Delay Timectd(on) 15 25
Rise TimectrVDD = 10 V, RL = 0.2 W11 20
ns
Turn-Off Delay Timectd(off)
VDD = 10 V
,
RL = 0
.
2 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W45 70 ns
Fall Timectf15 25
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current ISM 100 A
Diode Forward VoltagebVSD IF = 50 A, VGS = 0 V 1.2 1.5 V
Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/ms 45 90 ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
20
40
60
80
100
120
140
160
0246810
0
20
40
60
80
100
120
140
160
012345
Output Characteristics Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
25_C
-55_C
4 V
TC = 125_C
VGS = 10 thru 5 V
3 V
SUD70N02-03P
Vishay Siliconix
New Product
Document Number: 72246
S-31984—Rev. B, 13-Oct-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0 20406080100
0
2
4
6
8
10
0 1020304050607080
0
40
80
120
160
200
0 102030405060
0
1000
2000
3000
4000
5000
6000
7000
048121620
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
- Gate-to-Source Voltage (V) - On-Resistance (
Qg - Total Gate Charge (nC)
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
rDS(on) W)V GS
- Transconductance (S)gfs
VDS = 10 V
ID = 50 A
VGS = 10 V
VGS = 4.5 V
Crss
TC = - 55_C
25_C
125_C
Ciss
ID - Drain Current (A)
Coss
(Normalized)
- On-Resistance (rDS(on) W)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
100
1
0.3 0.6 0.9 1.2 1.5
VGS = 10 V
ID = 20 A
TJ = 25_C
TJ = 150_C
0
10
SUD70N02-03P
Vishay Siliconix New Product
www.vishay.com
4
Document Number: 72246
S-31984—Rev. B, 13-Oct-03
THERMAL RATINGS
0.1
0
8
16
24
32
40
0 25 50 75 100 125 150 175
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
1000
10
0.01
0.1 1 10 100
1
100
TA = 25_C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01 10-4 10-3 10-2 10-1 110
Normalized Effective Transient
Thermal Impedance
Maximum Drain Current vs.
Ambiemt Temperature
TA - Ambient Temperature (_C)
- Drain Current (A)ID
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1 ms
10 ms
100 ms
dc
10, 100 ms
1 s
1000100
0.1
10 s
100 s
Limited
by rDS(on)
2
1
0.1
0.01 10-4 10-3 10-2 10-1 1
0.2
Duty Cycle = 0.5
10
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
0.05
0.02
Single Pulse
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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