BYV26DGP, BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES * Superectifier structure for high reliability condition SUPERECTIFIER * Cavity-free glass-passivated junction (R) * Ultrafast reverse recovery time * Low forward voltage drop * Low switching losses, high efficiency * High forward surge capability * Meets environmental standard MIL-S-19500 DO-204AC (DO-15) * Solder dip 275 C max. 10 s, per JESD 22-B106 * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 800 V, 1000 V IFSM 30 A trr 75 ns VF 1.3 V TJ max. 175 C For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-204AC, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT Maximum repetitive peak reverse voltage VRRM 800 1000 V Maximum RMS voltage VRMS 560 700 V Maximum DC blocking voltage VDC 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length (fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Non repetitive peak reverse energy ERSM (1) 10 mJ Operating junction and storage temperature range TJ, TSTG - 65 to + 175 C Note (1) Peak reverse energy measured at I = 400 mA, T = T max. on inductive load, t = 20 s R J J Document Number: 88554 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26DGP, BYV26EGP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Minimum avalanche breakdown voltage 100 A Maximum instantaneous forward voltage 1.0 A TJ = 25 C BYV26DGP BYV26EGP UNIT VBR 900 1100 V 2.5 VF TJ = 175 C TA = 25 C Maximum DC reverse current at rated DC blocking voltage SYMBOL V 1.3 5.0 IR TA = 165 C A 150 Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 75 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL BYV26EGP 70 RJL (2) 16 RJA Typical thermal resistance BYV26DGP (1) UNIT C/W Notes (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYV26EGP-E3/54 0.428 54 4000 13" diameter paper tape and reel BYV26EGP-E3/73 0.428 73 2000 Ammo pack packaging BYV26EGPHE3/54 (1) 0.428 54 4000 13" diameter paper tape and reel BYV26EGPHE3/73 (1) 0.428 73 2000 Ammo pack packaging Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) D = 0.8 1.6 Lead Mounted on Heatsinks 1.0 0.8 0.6 Mounted on P.C.B. 0.375" (9.5 mm) Lead Length on 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 0.4 1.8 TL = Lead Temperature Resistive or Inductive Load Average Power Loss (W) Average Forward Rectified Current (A) 1.2 D = 0.3 D = 0.5 1.4 D = 0.2 D = 1.0 1.2 D = 0.1 1.0 0.8 T 0.6 0.4 0.2 0.2 TA = Ambient Temperature D = tp/T tp 0 0 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88554 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26DGP, BYV26EGP Vishay General Semiconductor 100 TJ = TJ Max. 10 ms Single Half Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) 100 10 1 1 10 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance 100 Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 100 TJ = 175 C 10 TJ = 150 C 1 TJ = 125 C 0.1 TJ = 25 C 0.01 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 10 Mounted on P.C.B. 0.375" (9.5 mm) Lead Length on 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 4 - Typical Instantaneous Forward Voltage Characteristics Fig. 7 - Typical Transient Thermal Impedance Instantaneous Reverse Leakage Current (A) 100 TJ = 175 C TJ = 165 C 10 TJ = 125 C 1 0.1 TJ = 25 C 0.01 0.001 0 20 40 60 80 100 Percent of Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Leakage Characteristics Document Number: 88554 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26DGP, BYV26EGP Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 88554 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000