Document Number: 88554 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Ultrafast Rectifier
BYV26DGP, BYV26EGP
Vishay General Semiconductor
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1) Peak reverse energy measured at IR = 400 mA, TJ = TJ max. on inductive load, t = 20 μs
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 800 V, 1000 V
IFSM 30 A
trr 75 ns
VF1.3 V
TJ max. 175 °C
DO-204AC (DO-15)
SUPERECTIFIER®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT
Maximum repetitive peak reverse voltage VRRM 800 1000 V
Maximum RMS voltage VRMS 560 700 V
Maximum DC blocking voltage VDC 800 1000 V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length (fig. 1) IF(AV) 1.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 30 A
Non repetitive peak reverse energy ERSM (1) 10 mJ
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88554
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYV26DGP, BYV26EGP
Vishay General Semiconductor
Notes
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYV26DGP BYV26EGP UNIT
Minimum avalanche
breakdown voltage 100 μA VBR 900 1100 V
Maximum instantaneous
forward voltage 1.0 A
TJ = 25 °C
VF
2.5
V
TJ = 175 °C 1.3
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 165 °C 150
Max. reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 75 ns
Typical junction capacitance 4.0 V, 1 MHz CJ15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT
Typical thermal resistance
RJA (1) 70
°C/W
RJL (2) 16
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYV26EGP-E3/54 0.428 54 4000 13" diameter paper tape and reel
BYV26EGP-E3/73 0.428 73 2000 Ammo pack packaging
BYV26EGPHE3/54 (1) 0.428 54 4000 13" diameter paper tape and reel
BYV26EGPHE3/73 (1) 0.428 73 2000 Ammo pack packaging
025 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
Lead Mounted
on Heatsinks
T
A
= Ambient Temperature
Temperature (°C)
Average Forward Rectied Current (A)
Mounted on P.C.B.
0.375
"
(9.5 mm) Lead Length on
0.47
"
x 0.47
"
(12 mm x 12 mm)
Copper Pads
T
L
= Lead Temperature
Resistive or
Inductive Load
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
D = 0.1
D = 0.2
D = 0.3 D = 0.5
D = 0.8
D = 1.0
Document Number: 88554 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYV26DGP, BYV26EGP
Vishay General Semiconductor
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Voltage Characteristics
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
110 100
1
10
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = TJ Max.
10 ms Single Half Sine-Wave
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
100
10
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 175 °C
T
J
= 25 °C
Percent of Peak Reverse Voltage (%)
0 20406080100
100
10
1
0.1
0.01
0.001
Instantaneous Reverse Leakage
Current (μA)
T
J
= 165 °C
T
J
= 125 °C
T
J
= 175 °C
0.1 110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 110 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Mounted on P.C.B.
0.375
"
(9.5 mm) Lead Length on
0.47
"
x 0.47
"
(12 mm x 12 mm)
Copper Pads
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88554
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYV26DGP, BYV26EGP
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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