SMD Schottky Barrier Rectifiers CDBM220-HF Thru CDBM2100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device Halogen free Features Mini SMA/SOD-123 -Batch process design, excellent powe dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Tiny plastic SMD package. -Low power loss, high efficiency. -High current capability, low forward voltage dorp. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planarchip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) 0.126(3.2) 0.110(2.8) 0.067(1.7) 0.051(1.3) Mechanical data -Case: Molded plastic, JEDEC MiniSMA/SOD-123. -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight:0.027 gram(approx.). 0.035(0.9) Typ. 0.035(0.9) Typ. Dimensions in inches and (millimeter) Maximum Ratings (at T =25C unless otherwise noted) A Symbol Parameter CDBM CDBM CDBM CDBM CDBM CDBM CDBM Unit 220-HF 230-HF 240-HF 250-HF 260-HF 280-HF 2100-HF Repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 V Continuous reverse voltage VR 20 30 40 50 60 80 100 V Maximum forward voltage @IF=2.0A VF Forward rectified current IO 2.0 A IFSM 50 A IR 0.5 10 mA RJA 85 Typ. diode junction capacitance (Note 1) CJ 160 Operating junction temperature TJ Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM 0.50 O @TA=25 C O @TA=125 C Typ. thermal resistance, junction to ambient air Storage temperature -55 to +125 TSTG 0.70 V 0.85 O C/W pF -55 to +150 -65 to +175 O C O C Note 1: f=1MHz and applied 4V DC reverse voltage. REV:A Page 1 QW-JB003 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers Rating and Characteristic Curves (CDBM220-HF Thru CDBM2100-HF) Fig.1 - Typical Forward Current Derating Curve Fig.2 - Typical Forward Characteristics 100 IF, Instantaneous Forward Current (A) 2.0 CDB 0 M25 0-H M22 CDB M2 1 F -HF 0 0 -H 40 BM2 1.0 B ~CD -HF D F~C IO, Averaged Forward Current (A) 2.3 50 100 150 CD 1 200 0- DB 25 BM CD 0- 4 M2 0-H ~C HF - 28 BM F M2 DB 0 -H 60 CD F~ -H F 21 BM 00 F -H 0.1 O TJ=25 C Pulse width 300s 1% duty cycle O 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF, Forward Voltage (V) TA, Ambient Temperature ( C) Fig.3 - Maximum Non-repetitive Peak Forward Surge Current Fig.4 - Typical Junction Capacitance 50 700 TJ=25 OC 8.3ms single half sine wave, JEDEC method 40 CJ, Junction Capacitance (pF) IFSM, Peak Forward Surge Current (A) 22 BM ~C HF CD 0.01 0.1 0 0 10 30 20 10 0 600 500 400 300 200 100 0 1 10 100 .01 Number of Cycles at 60Hz 0.1 1 10 100 VR, Reverse Voltage (V) Fig.5 - Typical Reverse Characteristics IR, Reverse Current (mA) 100 10 1 O TJ=75 C .1 O TJ=25 C .01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) REV:A Page 2 QW-JB003 Comchip Technology CO., LTD. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Comchip Technology: CDBM2100-HF CDBM260-HF CDBM240-HF