PBSS4480X,135 - NXP - Pdf.Support

DATA SH EET

Product data sheet

Supersedes data of 2004 Aug 5 2004 Oct 25

DISCRETE SEMICONDUCTORS

PBSS4480X

80 V, 4 A

NPN low VCEsat (BISS) transistor

ok, halfpage

M3D109

2004 Oct 25 2

NXP Semiconductors Product data sheet

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

FEATURES

•High hFE and low VCEsat at high current operation

•High collector current capability: IC maximum 4 A

•High efficiency leading to less heat generation.

APPLICATIONS

•Medium power peripheral drivers; e.g. fan, motor

•Strobe flash units for DSC an d mobile phones

•Inverter applications; e.g. TFT displays

•Power switch for LAN and ADSL systems

•Medium power DC-to-D C co nversion

•Battery chargers.

DESCRIPTION

NPN low V CEsat transistor in a SOT89 (SC-62) plastic

package.

PNP complement: PBSS5480X.

MARKING

Note

1. * = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE(1)

PBSS4480X *1Y

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 80 V

ICcollector current (DC) 4 A

ICM peak collector current 10 A

RCEsat equivalent

on-resistance 54 mΩ

PIN DESCRIPTION

1emitter

2collector

3base

321

sym04

Fig.1 Simplified outline (SOT89 ) and symbo l .

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4480X −plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

2004 Oct 25 3

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.

2. Device moun ted on a printed-circuit board, s ingle-sided copper, tin-plated and standard foo tp rint.

3. Device moun ted on a printed-circuit board, s ingle-sided copper, tin-plated and mounting pad for collector 1 cm2.

4. Device moun ted on a printed-circuit board, s ingle-sided copper, tin-plated and mounting pad for collector 6 cm2.

5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other

mounting cond itions, see “Thermal considerations for SOT8 9 in the General Part of associated Ha ndbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −80 V

VCEO collector-emitter voltage open base −80 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) note 4 −4 A

ICRM repetitive peak colle ctor current tp ≤ 10 ms; δ ≤ 0.1 −6 A

ICM peak collector current t = 1 ms or limited by Tj(max) −10 A

IBbase current (DC) −1 A

IBM peak base current t ≤ 300 μs−2 A

Ptot total power dissipation Tamb ≤ 25 °C

notes 1 and 2 −2.5 W

note 2 −550 mW

note 3 −1 W

note 4 −1.4 W

note 5 −1.6 W

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

2004 Oct 25 4

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

Tamb (°C)

−50 20015050 1000

001aaa229

800

400

1200

1600

Ptot

(mW)

(1)

(2)

(3)

(1) FR4 PCB; 6 cm2 mounting pad for collector.

(2) FR4 PCB; 1 cm2 mounting pad for collector.

(3) FR4; standard footprint.

Fig.2 Power derating curves.

2004 Oct 25 5

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

THERMAL CHARACTE RISTICS

Notes

1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.

2. Device moun ted on a printed-circuit board, s ingle-sided copper, tin-plated and standard foo tp rint.

3. Device moun ted on a printed-circuit board, s ingle-sided copper, tin-plated and mounting pad for collector 1 cm2.

4. Device moun ted on a printed-circuit board, s ingle-sided copper, tin-plated and mounting pad for collector 6 cm2.

5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other

mounting cond itions, see “Thermal considerations for SOT8 9 in the General Part of associated Ha ndbook”.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction

to ambient in free air

notes 1 and 2 50 K/W

note 2 225 K/W

note 3 125 K/W

note 4 90 K/W

note 5 80 K/W

Rth(j-s) thermal resistance from junction

to soldering point 16 K/W

006aaa232

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

Fig.3 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on FR4 printed - circuit board; standard footprint.

2004 Oct 25 6

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

006aaa233

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(5)

(6)

(7)

(8)

(9)

(10)

(1) (2)

(3) (4)

Fig.4 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-circuit board; mounting pad for collector 1 cm2.

006aaa234

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(6)

(7)

(8)

(9)

(10)

(1)

(5) (4)

(3) (2)

Fig.5 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-circuit board; mounting pad for collector 6 cm2.

2004 Oct 25 7

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-bas e cut-off current VCB = 80 V; IE = 0 A − − 100 nA

VCB = 80 V; IE = 0 A;

Tj = 150 °C− − 50 μA

ICES collector-emitter cut-off current VCE = 80 V; VBE = 0 V − − 100 nA

IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA

hFE DC current gain VCE = 2 V; IC = 0.5 A 250 400 − −

VCE = 2 V; IC = 1 A; note 1 250 400 − −

VCE = 2 V; IC = 2 A; note 1 175 270 − −

VCE = 2 V; IC = 4 A; note 1 80 140 − −

VCEsat collector-emitter saturation

voltage IC = 0.5 A; IB = 50 mA −25 40 mV

IC = 1 A; IB = 50 mA −55 80 mV

IC = 2 A; IB = 40 mA −110 160 mV

IC = 4 A; IB = 200 mA;

note 1 −170 230 mV

IC = 5 A; IB = 500 mA;

note 1 −200 270 mV

RCEsat equivalent on-resistance IC = 5 A; IB = 500 mA;

note 1 −40 54 mΩ

VBEsat base-emitter saturation voltage IC = 0.5 A; IB = 50 mA −0.78 0.85 V

IC = 1 A; IB = 50 mA −0.79 0.9 V

IC = 1 A; IB = 100 mA;

note 1 −0.82 0.95 V

IC = 4 A; IB = 400 mA;

note 1 −0.95 1.05 V

VBEon base-emitter turn-on voltage IC = 2 A; VCE = 2 V −0.78 0.85 V

fTtransition fr equency IC = 100 mA; VCE = 10 V;

f = 100 MHz 120 150 −MHz

Cccollector capacitance IE = ie = 0 A; VCB = 10 V;

f = 1 MHz −35 50 pF

2004 Oct 25 8

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

001aaa734

400

600

200

800

1000

hFE

IC (mA)

10−1104

103

110

(1)

(2)

(3)

VCE = 2 V.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig.6 DC current gain as a fu nction of collector

current; ty pical values.

001aab057

0.4

0.8

1.2

VBE

(V)

IC (mA)

10-1 104

103

110

(1)

(2)

(3)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

VCE = 2 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

001aaa737

102

103

VCEsat

(mV)

IC (mA)

10−1104

103

110

(1)

(2)

(3)

(1) IC/IB = 100.

(2) IC/IB = 50.

(3) IC/IB = 10.

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

001aaab059

10-1

10-2

VCEsat

(V)

10-3

IC (mA)

10-1 104

103

110

(1)

(2)

(3)

Fig.9 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

2004 Oct 25 9

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

001aaa736

0.4

0.8

1.2

VBEsat

(V)

IC (mA)

10−1104

103

110

(2)

(1)

(3)

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

Fig.10 Base- emitte r s atur ation v oltag e as a

function of collector current; typical values.

IC (mA)

10−1104

103

110

001aaa738

10−1

102

103

RCEsat

(Ω)

10−2

(1)

(3)

(2)

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

Fig.11 Equi valent on-resist ance as a function of

collector current; typical values.

VCE (V)

021.60.8 1.20.4

001aaa733

(A)

(6)

(5)

(9)

(8)

(1)

(7)

(10)

(2)(3)(4)

(1) IB = 190 mA.

(2) IB = 171 mA.

(3) IB = 152 mA.

(4) IB = 133 mA.

(5) IB = 114 mA.

(6) IB = 95 mA.

(7) IB = 76 mA.

(8) IB = 57 mA.

(9) IB = 38 mA.

(10) IB = 19 mA.

Fig.12 Collector current as a function of

collector-emitter voltage; typical values.

001aab321

0.4

0.8

1.2

VBEon

(V)

IC (mA)

10−1104

103

110

Fig.13 Base-emitter turn-on voltage as a function

of collector current; typical values.

Tamb = 25 °C.

2004 Oct 25 10

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

Reference mounting conditions

001aaa234

2.5 mm

5 m

1.6 mm

0.5 mm

1 mm

3.96 mm

3 mm

2.5 mm

1 mm

32 mm

Fig.14 FR4, standard footprin t.

handbook, halfpage

MLE322

40 mm

32 mm

2.5 mm

10 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

10 mm

Fig.15 FR4, mounting pad for collector 1 cm2.

001aaa235

2.5 mm

5 m

1.6 mm

0.5 mm

1 mm

3.96 mm

30 mm

32 mm

Fig.16 FR4, mounting pad for collector 6 cm2.

2004 Oct 25 11

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Oct 25 12

NXP Semiconductors Pr oduct data shee t

80 V, 4 A

NPN low VCEsat (BISS) transistor PBSS4480X

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completin g a design.

2. The prod uct status of devi ce(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the product specification.

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does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

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consequenc es of use of such information.

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reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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accepts no liability for inclusion and/or use of NXP

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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http://www.nxp.com/profile/terms, including those

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infringement and limitation of liability, unless explicitly

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/02/pp13 Date of release: 2004 Oct 25 Document orde r number: 9397 750 13924