PHB20N06T,118 - NXP Semiconductors / Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Rev. 01 — 22 February 2001 Product speciﬁcation

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™1 technology.

Product availability:

PHP20N06T in SOT78 (TO-220AB)

PHB20N06T in SOT404 (D 2-PAK).

2. Features

■Very low on-state resistance

■Fast switching.

3. Applications

■Switched mode power supplies

■DC to DC converters.

4. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

1. TrenchMOS is a trademark of Royal Philips Electronics.

Table 1: Pinning - SOT78, SOT404, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB) SOT404 (D2-PAK)

2 drain (d) [1]

3 source (s)

mb mounting base;

connected to drain (d)

MBK106

313

MBK116

MBB076

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 2 of 15

5. Quick reference data

6. Limiting values

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

VDS drain-source voltage (DC) Tj=25to175oC−55 V

IDdrain current (DC) Tmb =25°C; VGS =10V −20.3 A

Ptot total power dissipation Tmb =25°C−62 W

Tjjunction temperature −175 °C

RDSon drain-source on-state resistance VGS = 10 V; ID=10A

Tj=25°C6475mΩ

Tj= 175 °C−150 mΩ

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage (DC) −55 V

VDGR drain-gate voltage (DC) RGS =20kΩ−55 V

VGS gate-source voltage (DC) −±20 V

IDdrain current (DC) Tmb =25°C; VGS =10V;

Figure 2 and 3−20.3 A

Tmb = 100 °C; VGS =10V;Figure 2 −14.3 A

IDM peak drain current Tmb =25°C; pulsed; tp≤10 µs;

Figure 3 −81 A

Ptot total power dissipation Tmb =25°C; Figure 1 −62 W

Tstg storage temperature −55 +175 °C

Tjoperating junction temperature −55 +175 °C

Source-drain diode

IDR reverse drain current (DC) Tmb =25°C−20.3 A

IDRM pulsed reverse drain current Tmb =25°C; pulsed; tp≤10 µs−81 A

Avalanche ruggedness

WDSS non-repetitive avalanche energy unclamped inductive load; ID=11A;

VDS ≤55 V; VGS = 10 V; RGS =50Ω;

starting Tmb =25°C

−30.3 mJ

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 3 of 15

VGS ≥4.5 V

Fig 1. Normalized total power dissipation as a

function of mounting base temperature. Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

Tmb =25°C; IDM single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa16

100

120

0 25 50 75 100 125 150 175 200

Pder

Tmb (oC)

(%)

03aa24

100

120

0 25 50 75 100 125 150 175 200

Ider

(%)

Tmb (oC)

Pder Ptot

Ptot 25 C

()

---------------------- 100%×=

Ider ID

ID25C

()

-------------------100%×=

003aaa043

10-1

102

103

1 10

102

VDS (V)

D.C. 10 ms

RDSon = VDS/ ID

1 ms

tp = 10 us

100 us

δ =

(A)

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 4 of 15

7. Thermal characteristics

7.1 Transient thermal impedance

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

Rth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W

mounted on printed circuit board;

minimum footprint; SOT404

package

50 K/W

Rth(j-mb) thermal resistance from junction to mounting

base Figure 4 2.4 K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

003aaa044

Single Pulse

0.2

0.1

0.05

0.02

10-2

10-1

10-6 10-5 10-4 10-3 10-2 10-1

tp (s)

Zth(j-mb)

(K/W)

δ = 0.5

δ =

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 5 of 15

8. Characteristics

Table 5: Characteristics

=25

C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID= 0.25 mA; VGS =0V

Tj=25°C55−−V

Tj=−55 °C50−−V

VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V

GS;

Figure 9

Tj=25°C234V

Tj= 175 °C1−−V

Tj=−55 °C−−4.4 V

IDSS drain-source leakage current VDS = 55 V; VGS =0V

Tj=25°C−0.05 10 µA

Tj= 175 °C−−500 µA

IGSS gate-source leakage current VGS =±20 V; VDS =0V −2 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=10A;

Figure 7 and 8

Tj=25°C−64 75 mΩ

Tj= 175 °C−−150 mΩ

Dynamic characteristics

Qg(tot) total gate charge ID= 25 A; VDD =44V;

VGS =10V;Figure 14 −11 −nC

Qgs gate-source charge −3−nC

Qgd gate-drain (Miller) charge −6−nC

Ciss input capacitance VGS =0V; V

DS =25V;

f = 1 MHz; Figure 12 −320 483 pF

Coss output capacitance −92 113 pF

Crss reverse transfer capacitance −64 90 pF

td(on) turn-on delay time VDD = 30 V; RL= 1.2 Ω;

VGS =10V; R

G=10Ω;−10 −ns

trrise time −50 −ns

td(off) turn-off delay time −70 −ns

tffall time −40 −ns

Ldinternal drain inductance from drain lead 6 mm from

package to centre of die −4.5 −nH

from contact screw on

mounting base to centre of

die SOT78

−3.5 −nH

from upper edge of drain

mounting base to centre of

die SOT404

−2.5 −nH

Lsinternal source inductance from source lead to source

bond pad −7.5 −nH

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 6 of 15

Source-drain diode

VSD source-drain (diode forward)

voltage IS= 25 A; VGS =0V;

Figure 15 −0.85 1.2 V

trr reverse recovery time IS=20A;dI

S/dt = −100 A/µs

VGS =−10 V; VDS =30V −32 −ns

Qrrecovered charge −120 −nC

Table 5: Characteristics

…continued

=25

C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Tj=25°C; tp= 300 µsT

j=25°C; ID=25A

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values.

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values. Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

003aaa045

0246810

VDS (V)

(A)

5.0

6.0

6.5

7.0

7.5

8.0

9.0

VGS (V) =

003aaa051

100

120

140

160

5101520

VGS (V)

RDSon

(mΩ)

003aaa046

100

120

140

160

180

0 1020304050

ID (A)

RDSon

(mΩ)

VGS (V) =

5.5 66.5 78 10

03aa28

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

-60 -20 20 60 100 140 180

Tj (oC)

aRDSon

RDSon 25 C

()

----------------------------

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 7 of 15

ID= 1 mA; VDS =V

GS Tj=25°C; VDS =V

Fig 9. Gate-source threshold voltage as a function of

junction temperature. Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Tj=25°C; VDS =25V V

GS = 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of

drain current; typical values. Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

03aa32

0.5

1.5

2.5

3.5

4.5

-60 -20 20 60 100 140 180

VGS(th)

Tj (oC)

(V) max.

typ.

min

03aa35

10-6

10-5

10-4

10-3

10-2

10-1

012345

maxtypmin

VGS (V)

(A)

003aaa047

0 5 10 15 20 25

ID (A)

gfs

(S)

003aaa048

100

200

300

400

500

600

10-3 10-2 110 102

VDS (V)

Ciss, Coss,

Crss

(pF)

Ciss

Coss

Crss

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 8 of 15

VDS =25V T

j=25°C; ID=25A

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate

charge; typical values.

VGS =0V

Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

003aaa049

0246810

VGS (V)

(A)

Tj = 175 oC

Tj = 25 oC

003aaa050

0 5 10 15

QG (nC)

VGS VDD = 44 V

VDD = 14 V

(V)

003aaa052

100

120

0 0.5 1.0 1.5 2.0

VSD (V)

(A)

Tj = 25 oC

Tj = 175 oC

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 9 of 15

9. Package outline

Fig 16. SOT78 (TO-220AB).

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT78 SC-463-lead TO-220AB

123

L1(1)

0 5 10 mm

scale

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

DIMENSIONS (mm are the original dimensions)

Note

1. Terminals in this zone are not tinned.

UNIT A1b1D1ep

mm 2.54

AbD

cL2

max.

3.0 3.8

3.6

15.0

13.5 3.30

2.79 3.0

2.7 2.6

2.2

0.7

0.4 15.8

15.2

0.9

0.7 1.3

1.0

4.5

4.1 1.39

1.27 6.4

5.9 10.3

9.7

L1(1)

00-09-07

01-02-16

mounting

base

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 10 of 15

Fig 17. SOT404 (D2-PAK).

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

A1D1

max. EeL

pHDQc

2.54 2.60

2.20

15.80

14.80

2.90

2.10

11 1.60

1.20 10.30

9.70

4.50

4.10 1.40

1.27 0.85

0.60 0.64

0.46

DIMENSIONS (mm are the original dimensions)

SOT404

0 2.5 5 mm

scale

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads

(one lead cropped) SOT404

e e

mounting

base

99-06-25

01-02-12

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 11 of 15

10. Soldering

Dimensions in mm.

Fig 18. Reﬂow soldering footprint for SOT404.

handbook, full pagewidth

MSD057

solder lands

solder resist

occupied area

solder paste

10.50

7.40

7.50

1.50

1.70

10.60

1.20

1.30

1.55

5.08

10.85

0.30

2.15

8.35

2.25

4.60

0.20

3.00

4.85

7.95

8.15

8.075

8.275

5.40

1.50

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 12 of 15

11. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20010222 - Product speciﬁcation; initial version

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 13 of 15

12. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

13. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes, without notice, in the products, including circuits, standard

cells, and/or software, described or contained herein in order to improve

design and/or performance. Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products

are free from patent, copyright, or mask work right infringement, unless

otherwise speciﬁed.

Datasheet status Product status Deﬁnition[1]

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for product development. Speciﬁcation may

change in any manner without notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

Philips Semiconductors PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product speciﬁcation Rev. 01 — 22 February 2001 14 of 15

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(SCA71)

© Philips Electronics N.V. 2001. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
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thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 22 February 2001 Document order number: 9397 750 07894
Contents
Philips Semiconductors PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
4 Pinning information. . . . . . . . . . . . . . . . . . . . . .  1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . .  2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . .  4
7.1 Transient thermal impedance. . . . . . . . . . . . . .  4
8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  9
10 Soldering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . .  12
12 Data sheet status. . . . . . . . . . . . . . . . . . . . . . .  13
13 Definitions  . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .  13