MOTOROLA Order this document by MBV109T1/D SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1 * MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * Motorola Preferred Devices * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio 26-32 pF VOLTAGE VARIABLE CAPACITANCE DIODES * Available in Surface Mount Package 3 3 1 Cathode Anode SC-70/SOT-323 1 2 3 Cathode 1 Anode CASE 419-02, STYLE 3 SC-70/SOT-323 SOT-23 3 2 Cathode TO-92 1 Anode 1 2 MAXIMUM RATINGS Rating Symbol Reverse Voltage MBV109T1 MMBV109LT1 MV209 VR 30 Vdc Forward Current IF 200 mAdc Forward Power Dissipation @ TA = 25C Derate above 25C PD Junction Temperature TJ +125 C Tstg -55 to +150 C Storage Temperature Range 280 2.8 200 2.0 200 1.6 CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) Unit mW mW/C 1 2 CASE 182-02, STYLE 1 TO-92 (TO-226AC) DEVICE MARKING MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Symbol Min Typ Max Unit V(BR)R 30 -- -- Vdc IR -- -- 0.1 Adc TCC -- 300 -- ppm/C Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 1) Device Min Nom Max Min Min Max MBV109T1, MMBV109LT1, MV209 26 29 32 200 5.0 6.5 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces MMBV109LT1/D) Small-Signal Transistors, FETs and Diodes Device Data Motorola Motorola, Inc. 1996 1 MBV109T1 MMBV109LT1 MV209 40 1000 36 Q, FIGURE OF MERIT CT , CAPACITANCE - pF 32 28 24 20 16 12 VR = 3 Vdc TA = 25C 100 f = 1.0 MHz TA = 25C 8 4 0 1 3 10 30 Figure 1. DIODE CAPACITANCE Figure 2. FIGURE OF MERIT C t , DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 1000 f, FREQUENCY (MHz) 20 10 6.0 VR = 20 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 -40 100 10 VR, REVERSE VOLTAGE (VOLTS) 100 60 0.002 0.001 -60 10 100 -20 0 +20 +40 +60 +80 +100 +120 +140 1.04 1.03 1.02 VR = 3.0 Vdc f = 1.0 MHz Ct Cc + Cj [ 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE Figure 3. LEAKAGE CURRENT Figure 4. DIODE CAPACITANCE +100 +125 NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBV109T1 MMBV109LT1 MV209 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.037 0.95 0.037 0.95 0.025 0.65 0.65 0.079 2.0 0.075 1.9 0.035 0.9 0.035 0.9 0.031 0.8 0.028 inches 0.7 inches mm mm SOT-23 SC-70/SOT-323 POWER DISSIPATION FOR A SURFACE MOUNT DEVICE The power dissipation for a surface mount device is a function of the pad size. These can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device. For example, for a SOT-23 device, PD is calculated as follows. PD = 150C - 25C 556C/W The 556C/W for the SOT-23 assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the surface mount packages. One is to increase the area of the drain/collector pad. By increasing the area of the drain/collector pad, the power dissipation can be increased. Although the power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. = 225 milliwatts SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * The soldering temperature and time should not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MBV109T1 MMBV109LT1 MV209 SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 -189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 5 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the STEP 1 PREHEAT ZONE 1 "RAMP" 200C STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 "SPIKE" "SOAK" STEP 6 STEP 7 VENT COOLING 205 TO 219C PEAK AT SOLDER JOINT 170C 160C 150C 150C 140C 100C 100C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50C TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 5. Typical Solder Heating Profile PACKAGE DIMENSIONS 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBV109T1 MMBV109LT1 MV209 A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR D V G R N C 0.05 (0.002) J K H DIM A B C D G H J K L N R S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40 CASE 419-02 ISSUE E SC-70/SOT-323 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 3 B S 1 2 V STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE G C H D J K CASE 318-08 ISSUE AE SOT-23 (TO-236AB) A D P EE EE L F K J SECTION X-X X X D G STYLE 1: PIN 1. ANODE 2. CATHODE H V 1 2 N INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 B R SEATING PLANE DIM A B C D G H J K L S V C N CASE 182-02 (T0-226AC) ISSUE H Motorola Small-Signal Transistors, FETs and Diodes Device Data NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIM K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --- 0.250 --- 0.080 0.105 --- 0.050 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.49 0.41 0.56 0.407 0.482 1.27 BSC 3.54 BSC 0.36 0.41 12.70 --- 6.35 --- 2.03 2.66 --- 1.27 2.93 --- 3.43 --- 5 MBV109T1 MMBV109LT1 MV209 NOTES 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBV109T1 MMBV109LT1 MV209 NOTES Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 MBV109T1 MMBV109LT1 MV209 Motorola reserves the right to make changes without further notice to any products herein. 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