188 Diodes
4-4 Schottky Barrier Diodes
Standard
●Surface-Mount
IF (AV)
(A)
3.0
3.0
5.0
6.0
0.7
1.0
1.5
1.5
2.0
2.0
2.0
3.0
5.0
0.7
1.5
20
IFSM
(A)
50Hz
Single Half Sine Wave
60
50
60
50
10
25
40
60
25
10
40
120
VRM
(V)
40
60
90
100
TjTstg
(°C) (°C)
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
VF
(V)
max
0.5
0.55
0.55
0.55
0.62
0.69
0.62
0.7
0.7
0.81
0.81
0.85
IF
(A)
2.0
3.0
5.0
3.0
0.7
2.0
2.0
5.0
1.5
0.7
1.5
10.0
IR
(mA)
VR=VRM
max
5
3.5
5
3.5
1
1
2
3
1
1
2
1
IR(H)
(mA)
VR=VRM
max
100
100
175
100
30
55
70
125
70
30
55
100
Ta
(°C)
150
150
150
150
150
150
150
150
150
150
150
150
Rth(j-l)
Rth(j-c)
(°C/W)
20
5
5
5
20
20
20
5
20
20
20
2.5
Mass
(g)
0.072
0.29
0.29
0.29
0.072
0.072
0.072
0.29
0.072
0.072
0.072
1.04
Package
Surface-Mount (SFP)
Surface-Mount (D pack)
Surface-Mount (D pack)
Surface-Mount (D pack)Center-tap
Surface-Mount(SFP)
Surface-Mount(SFP)
Surface-Mount(SFP)
Surface-Mount (D pack)
Surface-Mount (SFP)
Surface-Mount (SFP)
Surface-Mount (SFP)
Surface-Mount (TO220S)Center-tap
Part Number
2.0 60 -40 to +150 0.55 2.0 5 70 150 20 0.072Surface-Mount (SFP) SFPB-64
2.0 50 -40 to +150 0.55 2.0 0.2 70 150 20 0.072Surface-Mount (SJP) SJPB-H4
SFPB-74
3.0 60 -40 to +150 0.55 3.0 0.3 100 150 20 0.072Surface-Mount (SJP) SJPB-L4
50 -40 to +150 0.70 3.0 0.3 70 150 20 0.072Surface-Mount (SJP) SJPB-L6
40 -40 to +150 0.69 2.0 0.2 55 150 20 0.072Surface-Mount (SJP) SJPB-H6*
25 -40 to +150 0.70 1.5 1.0 70 150 20 0.072Surface-Mount (SJP) SJPW-F6*
20 -40 to +150 0.70 1.0 0.1 30 150 20 0.072Surface-Mount (SJP) SJPB-D6*
1.0 30 -40 to +150 0.55 1.0 135 150 20 0.072Surface-Mount (SFP) SFPB-54
1.0 30 -40 to +150 0.55 1.0 0.1 35 150 20 0.072Surface-Mount (SJP) SJPB-D4
SPB-G34S
SPB-G54S
SPB-64S
SFPB-56
SFPB-66
SFPB-76
SPB-G56S
SFPW-56
SFPB-59
1.0 20 -40 to +150 0.85 1.0 0.1 30 150 20 0.072
Surface-Mount (SJP)
SJPB-D9*
2.0 40 -40 to +150 0.85 2.0 0.2 56 150 20 0.072
Surface-Mount (SJP)
SJPB-H9*
SFPB-69
MPE-220A
●Thru-hole
IF (AV)
(A)
1.0
1.0
1.7
2.5
3.0
1.0
1.0
1.5
1.7
2.5
3.0
3.0
4.0
5.0
5.0
6.0
10
10
10
15
15
20
20
30
IFSM
(A)
50Hz
Single Half Sine Wave
25
40
60
50
80
25
40
40
60
50
60
80
50
60
60
60
100
150
100
120
150
150
150
VRM
(V)
30
40
TjTstg
(°C) (°C)
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
VF
(V)
max
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.55
IF
(A)
1.0
1.0
2.0
2.5
3.0
1.0
1.0
2.0
2.0
2.5
3.0
3.0
2.0
5.0
3.0
5.0
5.0
10.0
7.5
7.5
10
10.0
15
IR
(mA)
VR=VRM
max
1.0
5.0
5
5
5
1
5
5
5
5
5
5
5
5
5
5
5
10
7.5
7.5
10
10
15
IR(H)
(mA)
VR=VRM
max
35
35
70
100
100
35
35
70
70
100
100
100
250
175
100
175
175
350
250
250
350
350
500
Ta
(°C)
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Rth(j-l)
Rth(j-c)
(°C/W)
22
20
15
12
8
22
20
17
15
12
4
8
4
4
4
4
4
4
4
4
4
4
4
Mass
(g)
0.13
0.3
0.45
0.6
1.2
0.13
0.3
0.3
0.45
0.6
2.1
1.2
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
Package
Axial
(Body Diameter/Lead Diameter)
Axial(
φ
2.4/
φ
0.6)
Axial(
φ
2.7/
φ
0.6)
Axial(
φ
4.0/
φ
0.78)
Axial(
φ
4.0/
φ
0.98)
Axial(
φ
6.5/
φ
1.4)
Axial(
φ
2.4/
φ
0.6)
Axial(
φ
2.7/
φ
0.6)
Axial(
φ
2.7/
φ
0.78)
Axial(
φ
4.0/
φ
0.78)
Axial(
φ
4.0/
φ
0.98)
TO-220F2Pin
Axial(
φ
6.5/
φ
1.4)
TO-220F(Center-tap)
TO-220F2Pin
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-220F2Pin
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-220F(Center-tap)
TO-220F(Center-tap)
Part Number
AK 03
EK 03
RK 13
RK 33
RK 43
AK 04
EK 04
EK 14
RK 14
RK 34
FMB-G14
RK 44
120 -40 to +150 0.55 5.0 1 150(Tj)150 8 1.2Axial(
φ
6.5/
φ
1.4) RW 54
FMB-24
FMB-G14L
FMB-24M
FMB-24L
FMW-24L
FMB-G24H
FMB-24H
FMW-24H
FMB-2204
FMW-2204
FMB-2304
*: Under development
197
Diodes
• No. 13
Axial (
φ
2.7/
φ
0.6)
• No. 14 Axial (
φ
2.7/
φ
0.78) • No. 15 Axial (
φ
4.0/
φ
0.78)
Silicon Varistors (Symmetrical)
50±0.1
8.0±0.2
6.5±0.2
φ
1.4±0.1
φ
Cathode band
56.0±0.7
1.3±0.05
10.0±0.2
C2
10.0±0.02
Cathode band
a: Part Number
b: Polarity
c: Lot No.
0.85
+0.2
−0.1
0.45
+0.2
−0.1
1.35
a
b
c
±0.15
1.35
±0.15
2.4
±0.2
10.0
±0.2
4.2
0.2
2.8
2.54
S type R type U type
2.54
8.4
±0.2
16.9
13.0min
±0.3
4.0
±0.2
3.9 0.8
±0.2 ±0.2
3.3
φ
±0.2
±0.2
0.5
C
a: Part Number
b: Polarity
c: Lot No.
0.85+0.2
−0.1
0.45+0.2
−0.1
1.35
a
b
c
±0.15
1.35±0.15
2.4±0.2
10.0±0.2 4.2±0.2
2.8
2.54
S type R type
2.54
8.4±0.2
16.9
13.0min ±0.3
4.0±0.2
3.9 0.8
±0.2 ±0.2
3.3
φ
±0.2
±0.2 0.5
C
16.9
(13.5) 8.4
0.8
3.9 4.0
10.0
2.2 2.6
4.2
2.8
1.35
0.85
5.08 0.45
3.3
φ
qw
16.9
(13.5) 8.4
0.8
3.9 4.0
10.0
2.2 2.6
4.2
2.8
1.35
0.85
5.08 0.45
3.3
qw
62.3±0.7
5.0±0.2
2.7±0.2
φ
0.78±0.05
φ
Cathode band
62.5
±0.7
7.2
±0.2
4.0
±0.2
φ
0.78
±0.05
φ
Cathode band
62.5
±0.7
7.2
±0.2
4.0
±0.2
φ
0.98
±0.05
φ
Cathode band
62.5
±0.7
9.1
±0.2
5.2
±0.2
φ
1.2
±0.05
φ
Cathode band
• No. 16 Axial (
φ
4.0/
φ
0.98) • No. 17 Axial (
φ
5.2/
φ
1.2) • No. 18 Axial (
φ
6.5/
φ
1.4)
• No. 19 Axial (
φ
10.0/
φ
1.3) • No. 20 TO-220F (Two Elements) • No. 21 TO-220F (Center-tap)
• No. 22 TO-220F2Pin • No. 23 TO-220F2Pin (Two Elements) • No. 24 TO-3PF
62.3±1.0
5.0±0.2
2.7±0.2
0.6
φ
φ
15.6
a
b
±0.2 5.5±0.2
3.45±0.2
1.75±0.15
2.15±0.15
5.45±0.1 3.35
0.8
±0.2
5.45
1.5 4.4 1.5
±0.1
3.3
f
±0.2
1.05+0.2
-0.1
0.65+0.2
-0.1
23.0
5.5
±0.3
9.5±0.2
0.8
1.6
3.3
3.0
±0.2
a: Part Number
b: Lot No.
Package Type (Dimensions)
FMX-2203
SFPL-64
81
25 50 75 100 125
VR=300V
VR=400V
150
0
10
5
15
20
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Reverse Voltage VR (V)
050
Reverse Current IR (A)
300100 150 200 250
0.001
0.01
0.1
1
0.0001
0.00001
100
10
1
0.01
0.1
0.001 0.3 0.6 0.9 1.2
Forward Voltage VF (V)
Forward Current IF (A)
0 1.5
Ta=150°C
100°C
60°C
25°C
VF—IF Characteristics (Typical) VR—IR Characteristics (Typical)
Average Forward Current IF(AV) (A)Average Forward Current IF(AV) (A)
Tc—IF (AV) Derating
Tc—IF (AV) Derating
Tc—IF (AV) Derating
T
t
Tj=150°CTa=150°C
100°C
60°C
25°C
t/T=1/2
D.C.
t/T=1/3
t/T=1/6
Sinewave
t/T=1/3, Sinewave
t/T=1/2
D.C.
t/T=1/6
0 0.2 0.6 0.80.4 1.0
0
0.4
0.8
1.2
0.2
0.6
1.0
1.6
2.0
1.4
1.8
Forward Power Loss PF (W)
Average Forward Current IF(AV) (A)
IF(AV)—PF Characteristics
T
t
Tj=150°C
0 200100 300 400
0
0.020
0.015
0.010
0.005
Reverse Power Loss PR (W)
Average Forward Current IF(AV) (A)
Forward Power Loss PF (W)
Reverse Power Loss PR (W)
Average Forward Current IF(AV) (A)
Forward Power Loss PF (W)
Reverse Power Loss PR (W)
Reverse Voltage VR (V)
Average Forward Current IF(AV) (A) Reverse Voltage VR (V)
Average Forward Current IF(AV) (A) Reverse Voltage VR (V)
VR—PR Characteristics
IF(AV)—PF Characteristics VR—PR Characteristics
IF(AV)—PF Characteristics VR—PR Characteristics
T
t
Tj=150°C
Sinewave
1–t/T=5/6
1–t/T=2/3
1–t/T=1/2
100 110 120 140130 150
0
0.2
0.4
0.6
0.8
1.0
T
t
Tj=150ºC
t/T=1/2
D.C.
t/T=1/3
t/T=1/6
Sinewave
Characteristic Curves
Ultra-Fast-Recovery Rectifier Diodes
T — IF(AV) Characteristics
Lead Temperature T (°C)
MPX-2103
FMW-2204
50 70 90 110 130
VR=300V
150
0
4
2
6
8
10
T
t
Tj=150ºC
t/T=1/2
D.C.
t/T=1/3
t/T=1/6
Sinewave
t/T=1/3, Sinewave
t/T=1/2
D.C.
t/T=1/6
02 68410
0
4
8
12
2
6
10
16
20
14
18 Tj=150ºC
T
t
Tj=150ºC
0 25015010050 200 300
0
10
8
6
4
2
T
t
Tj=150ºC
Sinewave
1–t/T=5/6
1–t/T=2/3
1–t/T=1/2
0 50 100
VR=40V
150
0
5
10
15
20
T
t
Tj=150ºC
t/T=1/2 D.C.
t/T=1/3
t/T=1/6
Sinewave
t/T=1/3, Sinewave
t/T=1/2
D.C.
t/T=1/6
0203010 40 0 20 3010 40
0
5
10
15
20
25 Tj=150ºC
T
t
Tj=150ºC
0
25
20
15
10
5
T
t
Tj=150ºC
Sinewave
1–t/T=5/6
1–t/T=2/3
1–t/T=1/2
