fiAMOSPEC PNP SILICON POWER TRANSISTORS PNP 2SA940 transistor is designed for use in general purpose power 2SA940 amplifier,vertical output application FEATURES: Collector-Emitter Voltage 1.5 AMPERE Veeo= eon) POWER * DC Current Gain hFE= 40-140@I,= 500mA eR OLTS RS * Complementary NPN 2SC2073 25 WATTS MAXIMUM RATINGS Characteristic Symbol 2SA940 Unit Collector-Emitter Voltage Veeco 150 V Collector-Base Voltage Vepo 150 Vv Emitter-Base Voltage Vepo 5.0 V TO-220 Collector Current - Continuous Ib 1.5 A - Peak | 3.0 CM B ; Base Current Ip 0.5 A 1 re Total Power Dissipation @T, = 25C Pp 25 w A Derate above 25C 0.2 wc ples L tO a | Operating and Storage Junction Ty. Tste6 C {| Temperature Range -55 to +150 - HL THERMAL CHARACTERISTICS J 7 Characteristic Symbol Max Unit Fee ECTOR Thermal Resistance Junction to Case Rojec 5.0 C/W 1 COLLECTOR(CASE) DIM MILLIMETERS FIGURE -1 POWER DERATING MIN MAX 30 A 1468 | 1531 = B 9.78 | 10.42 wy E 25 Cc 5.01 6.52 $ D 13.06 | 14.62 = 20 E 357 | 407 2 F 2.42 | 3.66 15 G 112 | 1.36 o H 0.72 | O96 - 10 i 422 | 498 S J 1.14 | 1.38 o 5 K 220 | 297 A L 0.33 | 055 * 0 M 2.48 2.98 0 25 50 75 100 125 150 oO 3.70 3.90 Tes TEMPERATURE( C)2SA940 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) (1g =0.5A, Veg = 10 V, f = 1.0 MHz) Characteristic Symbol! Min Max Unit OFF CHARACTERISTICS Coilector-Base Voltage Vepo V (i= 1.0 mA ,I,= 0) 150 Collector-Emitter Voltage Veeo Vv (I,= 5.0 mA, I,= 9 ) 150 Emitter-Base Voltage Vepo Vv ( Ip= 1.0 mA, I= 0) 5.0 Collector Cutoff Current logo uA ( Vog= 120 V, i-= 0) 10 Emitter Cutoff Current lego uA ( Vep= 5.0 V, Ih= 0) 10 ON CHARACTERISTICS (1) DC Current Gain hFE (Ip= 0.5 A, Veg= 10V ) 40 140 Collector-Emitter Saturation Voltage VcE;sat) Vv (I= 0.5 A, p= 50 mA) 15 Base-Emitter On Voltage Vee(on) Vv (lp= 500 mMA,V,= 5.0 V ) 0.65 0.85 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fy MHz 4.0 (1) Pulse Test: Pulse Width =300 ;,s,Duty Cycle = 2.0%:2SA940 PNP I ] Ic - Vee ACTIVE-REGION SAFE OPERATING AREA (SOA) 2.0 16 < - Zz Wi & 3 12 a x = 5 fi 8 3 w ~ 04 e - Bonding Wire Limit w - Second Breakdown Limit A 3 Thermally Limited *. at T ,=25C (Sine Puse) 40 8.0 12 16 20 Vee , COLLECTOR-EMITTER VOLTAGE (V) VCE(sat) - Ic 50 7.0 10 2 8630 50 70100 300 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) et. There are two limitation on the power handling ability Te=25C of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T yp9q=150 C;Tc is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Tapas 50C, At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) 0.01 0.02 0.05 0.1 02 03 05 1.0 20 30 le, COOLECTOR CURRENT (A) DC CURRENT GAIN COMMON EMITTER Voe2-10V Te=100C r hre , DC CURRENT GAIN 0.01 0.02 0.05 0.1 02 03 05 1.0 3.0 ( , COLLECTOR CURRENT (AMP)