T4-LDS-0161-1, Rev. 1 (10/15/13) ©2013 Microsemi Corporation Page 1 of 4
2N3960UB
Compliant NPN Silicon Switching Transistor
Qualified per MIL-PRF-19500/399
Qualified Levels:
JAN, JANT X, AND
JANTXV
DESCRIPTION
This 2 N3960UB epit axial planar transistor is mili tary q uali fied up to the JANTXV level for high-
reliability ap plications . It features a l ow pr ofile ceramic UB p ackage. This device is also
avai lable i n a thru-hole TO-18 package.
UB Package
Also available in:
TO-18 package
(leaded)
2N3960
Important: For the latest information, vis it our web site http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of JEDEC registered 2N3960 number
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/366.
(See part nomenclature for all available options.)
• RoHS com pliant
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching
• Low profile ceramic package
• Lightweight
• Military and other high-reliability appli cations
MAXIMUM RATINGS @ TC = +25 ºC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol Value Unit
Junction & Storage Temperature Range TJ, Tstg -65 to +200 °C
Collector-Emitter Voltage VCEO 12 V
Collector-Base Voltage V
CBO
20 V
Emitter-Base Voltage VEBO 4.5 V
Total P ower Dissipation
@ T A = +25 °C (1)
PT
400
mW
Notes: 1. Derate linearly 2.3 mW/°C above TA = +25 °C
T4-LDS-0161-1, Rev. 1 (10/15/13) ©2013 Microsemi Corporation Page 2 of 4
2N3960UB
• CASE: Ceramic with kovar lid
• TERMINALS: Gold plating over nickel under plate.
• MARKING: Part number, date code, manufa cturer’s I D
• TAPE & REEL opti on: Standard per EIA-418D. Cons ult factory for quantities.
• WEIGH T: Less than 0.04 grams
• See Package Dimensions on last page.
JAN 2N3960 UB
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
Surface Mount package
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEF INITI ONS
Symbol
Definition
IB
Base cur rent: The val ue of the dc current into the base term inal.
IC
Collector current: The value of the dc current into the collector terminal.
VCB
Collector-base vol tage: The dc vol tage between the collector and the base.
VCBO
Collector-base vol tage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
VCE
Collector-emitter voltage: The dc voltage between the collector and the emitter.
VCEO
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
VCC
Collector-suppl y voltage: The supply voltage appl ied to a circuit connected to the col lector.
VEB
Emitter-base voltage: The dc vol tage between the emitter and the base
VEBO
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the col lector terminal
open-circuited.
T4-LDS-0161-1, Rev. 1 (10/15/13) ©2013 Microsemi Corporation Page 3 of 4
2N3960UB
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emit ter Breakdown Voltage
IC = 10
µ
A, pul se d
V(BR)CEO
12
V
Collector-Base Cutoff Current
VCB = 20 V
ICBO
10
µA
Emitter-Base C utoff Cur r ent
V
EB
= 4. 5 V
IEBO
10
µA
Collector-Emit ter Cut off Current
VCE = 10 V, VEB = 0.4 V
VCE = 10 V, VEB = 2.0 V
ICEX1
ICEX2
1
5
µA
nA
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 1.0 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 30 mA, VCE = 1 V
hFE
40
60
30
300
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 30 mA, IB = 3.0 mA
VCE(sat)
0.2
0.3
V
Base-Emitter S aturation Voltag e
IC = 1.0 mA, VCE = 1.0 V
IC = 30 mA, VCE = 1.0 V
VBE
0.8
1.0
V
DYNAMIC CHARACTERIST ICS
Forward Cur r ent Transfer Ratio, Magni tude
IC = 5.0 mA, VCE = 4 V, f = 100 M H z
IC = 10 mA, VCE = 4 V, f = 10 0 MHz
IC = 30 mA, VCE = 4 V, f = 100 MHz
|hfe|
13
14
12
O utput Capac itance
VCB = 4 V, IE = 0, 10 0 kHz < f < 1 M H z
Cobo
2.5
pF
I nput Cap acitance
VEB = 0. 5 V, IC = 0, 100 kH z < f < 1.0 MHz
Cibo
2.5
pF
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%
T4-LDS-0161-1, Rev. 1 (10/15/13) ©2013 Microsemi Corporation Page 4 of 4
2N3960UB
Symbol
Dimensions
Note
Symbol
Dimensions
Note
Inch
Millimeters
Inch
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
0.046
0.056
1.17
1.42
LS1
0.035
0.040
0.89
1.02
BL
0.115
0.128
2.92
3.25
LS2
0.071
0.079
1.80
2.01
BW
0.085
0.108
2.16
2.74
LW
0.016
0.024
0.41
0.61
CL
-
0.128
-
3.25
r
-
0.008
-
0.203
CW
-
0.108
-
2.74
r1
-
0.012
-
0.305
LL1
0.022
0.038
0.56
0.97
r2
-
0.022
-
0.559
LL2
0.017
0.035
0.43
0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for infor mat ion only .
3. Hatched areas on package denote metallized areas.
4. Lid mater ial: Kov ar
5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
6. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Lid