2N6497
2N6498
2N6499
SILICON
NPN POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6497, 2N6498,
and 2N6499 are silicon NPN power transistors designed
for high voltage amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6497 2N6498 2N6499 UNITS
Collector-Base Voltage VCBO 350 400 450 V
Collector-Emitter Voltage VCEO 250 300 350 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 5.0 A
Peak Collector Current ICM 10 A
Continuous Base Current IB 2.0 A
Power Dissipation PD 80 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 1.56 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6497 2N6498 2N6499
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICEX V
CE=Rated VCBO, VBE=1.5V - 1.0 - 1.0 - 1.0 mA
ICEX V
CE=½Rated VCBO,
V
BE=1.5V, TC=100°C - 10 - 10 - 10 mA
IEBO V
EB=6.0V - 1.0 - 1.0 - 1.0 mA
BVCEO IC=25mA 250 - 300 - 350 - V
VCE(SAT) IC=2.5A, IB=500mA - 1.0 - 1.25 - 1.5 V
VCE(SAT) IC=5.0A, IB=2.0A - 5.0 - 5.0 - 5.0 V
VBE(SAT) IC=2.5A, IB=500mA - 1.5 - 1.5 - 1.5 V
VBE(SAT) IC=5.0A, IB=2.0A - 2.5 - 2.5 - 2.5 V
hFE VCE=10V, IC=2.5A 10 75 10 75 10 75
hFE VCE=10V, IC=5.0A 3.0 - 3.0 - 3.0 -
fT VCE=10V, IC=250mA, f=1.0MHz 5.0 - 5.0 - 5.0 - MHz
Cob VCB=10V, IE=0, f=100kHz - 150 - 150 - 150 pF
tr VCC=125V, IC=2.5A, IB1=0.5A - 1.0 - 1.0 - 1.0 μs
ts VCC=125V, IC=2.5A, VBE=5.0V,
I
B1=IB2=0.5A - 2.5 - 2.5 - 2.5 μs
tf VCC=125V, IC=2.5A, IB1=IB2=0.5A - 1.0 - 1.0 - 1.0 μs
TO-220 CASE
R1 (31-July 2013)
www.centralsemi.com
2N6497
2N6498
2N6499
SILICON
NPN POWER TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (31-July 2013)
2N6497
2N6498
2N6499
SILICON
NPN POWER TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (31-July 2013)
www.centralsemi.com
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(001)
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