2SC1213A(K) Silicon NPN Epitaxial Application * Low frequency amplifier * Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213A (K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 -- -- V I C = 10 A, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 50 -- -- V I C = 1.0 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 4 -- -- V I E = 10 A, IC = 0 Collector cutoff current I CBO -- -- 0.5 A VCB = 20 V, IE = 0 60 -- 320 VCE = 3 V, IC = 10 mA 10 -- -- VCE = 3 V, IC = 500 mA*2 0.64 -- V VCE = 3 V, IC = 10 mA DC current transfer ratio hFE* 1 hFE Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) -- 0.12 0.6 V I C = 150 mA, IB = 15 mA*2 Base to emitter satruation voltage VBE(sat) -- 0.83 1.2 V I C = 150 mA, IB = 15 mA*2 Collector output capacitance Cob -- 7.0 -- pF VCB = 10 V, IE = 0, f = 1 MHz Gain bandwidth product fT -- 120 -- MHz VCE = 3 V, IC = 10 mA Turn on time t on -- 0.25 -- S VCC = 10.3 V I C = 10 IB1 = -10 IB2 = 10 mA Turn off time t off -- 0.85 -- S Storage time t stg -- 0.4 -- S Notes: 1. The 2SC1213A(K) is grouped by h FE as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 2 VCC = 5 V I C = IB1 = -IB2 = 20 mA 2SC1213A (K) Switching Time Test Circuit ton, toff Test Circuit 6k 50 P.G. -6 V tr, tf 15 ns PW 5 s duty ratio 10% Switching Time Test Circuit tstg Test Circuit CRT D.U.T. D.U.T. 1k 6k 0.002 0.002 - + 50 - + 50 200 100 P.G. tr 5 ns PW 5 s duty ratio 2% 10.3 V Unit R : C : F Response Waveform 13 V Input 0 Output 0 0.002 7V + - 50 240 0.002 - + 50 5V Unit R : C:F Response Waveform 0 Input 9V 90% 10% td 90% 10% ton 90% 10% Output 0 10% tstg toff 500 Maximum Collector Dissipation Curve Collector Current IC (mA) Collector Power Dissipation PC (mW) CRT 1.0 215 500 400 300 200 100 400 300 200 Typical Output Characteristics (1) 40 30 20 10 8 6 5 4 3 2 1 mA 100 PC = 400 mW IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 3 4 5 1 2 Collector to Emitter Voltage VCE (V) 3 2SC1213A (K) Typical Output Characteristics (2) Typical Transfer Characteristics 100 30 60 0.6 0.5 0.4 40 0.3 0.2 0.1 mA IB = 0 20 0 PC = 400 mW 10 3 25 -25 0.7 Ta = 75C 80 VCE = 3 V 0.8 Collector Current IC (mA) Collector Current IC (mA) 0.9 1.0 0.3 30 40 50 10 20 Collector to Emitter Voltage VCE (V) 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Collector Cutoff Current vs. Collector to Base Voltage 30 10 3 1.0 75 50 Ta = 25C 0.3 0.1 0.03 4 100 30 40 50 0 10 20 Collector to Base Voltage VCB (V) DC Current Transfer Ratio hFE Collector Current ICBO (nA) 100 140 VCE = 3 V 120 100 75 50 80 25 0 25 - a= C T 60 40 20 0 2 5 50 100 200 10 20 Collector Current IC (mA) 500 Collector to Emitter Saturation Voltage vs. Collector Current 0.32 0.28 IC = 10 IB 0.24 0.20 0.16 0.12 0.08 0.04 0 10 30 100 300 1,000 0.1 0.3 1.0 3 Collector Current IC (mA) Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 2SC1213A (K) Base to Emitter Saturation Voltage vs. Collector Current 1.1 IC = 10 IB Pulse 1.0 0.9 0.8 -25 0 25 50 C 5 =7 a T 0.7 0.6 0.5 0.4 0.1 0.2 Gain Bandwidth Product vs. Collector Current 280 f = 1 MHz 60 Gain Bandwidth Product fT (MHz) Collector Output Capacitance Cob (pF) Emitter input Capacitance Cib (pF) Input And Output Capacitance vs. Voltage 70 50 Cib(IC = 0) 40 30 20 10 0 0.1 Cob(IE = 0) 0.3 1.0 3 10 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) 0.5 1.0 2 5 10 20 50 100 200 500 Collector Current IC (mA) 30 VCE = 3 V 240 200 160 120 80 40 0 2 5 50 100 200 10 20 Collector Current IC (mA) 500 5 2SC1213A (K) Switching Time vs. Collector Current 1,000 toff Switching Time t (ns) 500 tstg 200 100 50 ton 20 VCC = 10.3 V IC = 10 IB1 = -10 IB2 td 10 5 6 50 100 200 10 20 Collector Current IC (mA) 500 Unit: mm 4.8 0.3 0.7 0.60 Max 0.5 0.1 12.7 Min 2.3 Max 5.0 0.2 3.8 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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