2SC1213A(K)
Silicon NPN Epitaxial
Application
Low frequency amplifier
Medium speed switching
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
321
2SC1213A (K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 50 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 4V
Collector current IC500 mA
Collector power dissipation PC400 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 50 V IC = 10 µA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 50 V IC = 1.0 mA, RBE =
Emitter to base breakdown
voltage V(BR)EBO 4—VI
E
= 10 µA, IC = 0
Collector cutoff current ICBO 0.5 µAV
CB = 20 V, IE = 0
DC current transfer ratio hFE*160 320 VCE = 3 V, IC = 10 mA
hFE 10 VCE = 3 V, IC = 500 mA*2
Base to emitter voltage VBE 0.64 V VCE = 3 V, IC = 10 mA
Collector to emitter saturation
voltage VCE(sat) 0.12 0.6 V IC = 150 mA, IB = 15 mA*2
Base to emitter satruation
voltage VBE(sat) 0.83 1.2 V IC = 150 mA, IB = 15 mA*2
Collector output capacitance Cob 7.0 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product fT 120 MHz VCE = 3 V, IC = 10 mA
Turn on time ton 0.25 µSV
CC = 10.3 V
IC = 10 IB1 = –10 IB2 = 10 mA
Turn off time toff 0.85 µS
Storage time tstg 0.4 µSV
CC = 5 V
IC = IB1 = –IB2 = 20 mA
Notes: 1. The 2SC1213A(K) is grouped by hFE as follows.
2. Pulse test
BCD
60 to 120 100 to 200 160 to 320
2SC1213A (K)
3
Switching Time Test Circuit
ton, toff Test Circuit
50
50
0.002
–6 V
6 k 1 k
10.3 V
6 k D.U.T. CRT
P.G.
tr, tf 15 ns
PW 5 µs
duty ratio 10%
–+ 50
0.002
–+
Unit R :
C : µF
Switching Time Test Circuit
tstg Test Circuit
200
50
0.002
7 V
100
240
5 V
1.0
215
D.U.T. CRT
P.G.
tr 5 ns
PW 5 µs
duty ratio 2%
+– 50
0.002
–+
Unit R :
C : F
0
0
13 V
10%
90%
10%
Response Waveform
90%
90%
Input
Output
ton
td
toff
0
0
9 V
10%
10%
Input
Output
tstg
Response Waveform
0
200
100
400
300
500
50
Ambient Temperature Ta (°C)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100 150 0
100
200
300
500
400
12
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Typical Output Characteristics (1)
345
1 mA
2
3
4
5
6
10
30
40
8
IB = 0
P
C
= 400 mW
20
2SC1213A (K)
4
0
20
40
60
100
80
10 20
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Typical Output Characteristics (2)
30 40 50
0.1 mA
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
IB = 0
P
C
= 400 mW
0
1.0
0.3
3
30
10
0.2 0.4
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Typical Transfer Characteristics
0.6 0.8 1.21.0
25
–25
Ta = 75°C
VCE = 3 V
0.03
0.1
0.3
1.0
3
10
100
30
10020
Collector to Base Voltage VCB (V)
Collector Current ICBO (nA)
Collector Cutoff Current vs.
Collector to Base Voltage
30 40 50
100
75
50
Ta = 25°C
0
20
40
60
80
140
120
100
2 5 10 20
Collector Current IC (mA)
DC Current Transfer Ratio hFE
DC Current Transfer Ratio vs.
Collector Current
50 100 200 500
Ta = –25°C
0
25
50
75
VCE = 3 V
2SC1213A (K)
5
0.1
0
0.04
0.12
0.08
0.20
0.16
0.32
0.28
0.24
0.3 1.0 3
Collector Current IC (mA)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
10 30 100 300 1,000
IC = 10 IB
0.4
0.5
0.6
0.7
0.8
1.1
1.0
0.9
0.1 0.2 0.5 1.0 2 5
Collector Current IC (mA)
Base to Emitter Saturation Voltage VBE(sat) (V)
Base to Emitter Saturation Voltage vs.
Collector Current
10 20 50 100 200 500
Ta = 75°C
50
25
0
–25
IC = 10 IB
Pulse
0.1
0
20
10
40
30
70
60
50
0.3 1.0 3
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
Collector Output Capacitance Cob (pF)
Emitter input Capacitance Cib (pF)
Input And Output Capacitance vs. Voltage
10 30
Cib(IC = 0)
Cob(IE = 0)
f = 1 MHz
2
0
80
40
160
120
280
240
200
51020
Collector Current IC (mA)
Gain Bandwidth Product fT (MHz)
Gain Bandwidth Product vs.
Collector Current
50 100 200 500
VCE = 3 V
2SC1213A (K)
6
5
10
20
50
200
100
1,000
500
10 20
Collector Current IC (mA)
Switching Time t (ns)
Switching Time vs. Collector Current
50 100 200 500
VCC = 10.3 V
IC = 10 IB1 = –10 IB2
toff
tstg
ton
td
0.60 Max
0.5 ± 0.1
4.8 ± 0.3 3.8 ± 0.3
5.0 ± 0.2
0.7 2.3 Max
12.7 Min
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Unit: mm
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