LM136-5.0QML, LM136A-5.0QML
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SNVS352B –APRIL 2008–REVISED MARCH 2013
LM136A-5.0QML
LM136-5.0QML 5.0V Reference Diode
Check for Samples: LM136-5.0QML,LM136A-5.0QML
1FEATURES DESCRIPTION
The LM136A-5.0QML/LM136-5.0QML integrated
2• Adjustable 4V to 6V circuits are precision 5.0V shunt regulator diodes.
• Low Temperature Coefficient These monolithic IC voltage references operate as a
• Wide Operating Current of 600 μA to 10 mA low temperature coefficient 5.0V zener with 0.6Ω
dynamic impedance. A third terminal on the LM136-
• 0.6ΩDynamic Impedance 5.0 allows the reference voltage and temperature
• Ensured Temperature Stability coefficient to be trimmed easily.
• Easily Trimmed for Minimum Temperature Drift The LM136-5.0 series is useful as a precision 5.0V
• Fast Turn-On low voltage reference for digital voltmeters, power
• Three Lead Transistor Package supplies or op amp circuitry. The 5.0V makes it
convenient to obtain a stable reference from low
voltage supplies. Further, since the LM136-5.0
operates as a shunt regulator, it can be used as
either a positive or negative voltage reference.
Connection Diagram
Figure 1. Bottom View
3-Lead TO
Metal Can Package
See NDV0003H Package
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2008–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM136-5.0QML, LM136A-5.0QML
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SNVS352B –APRIL 2008–REVISED MARCH 2013
† Adjust to 5.00V
* Any silicon signal diode
Figure 3. 5.0V Reference with Minimum
Temperature Coefficient
* Does not affect temperature coefficient
Figure 4. Trimmed 4V to 6V Reference
with Temperature Coefficient
Independent of Breakdown Voltage
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Absolute Maximum Ratings (1)
Reverse Current 15mA
Forward Current 15mA
Storage Temperature −60°C ≤TA≤+150°C
Operating Temperature Range(2) −55°C ≤TA≤+125°C
Soldering Information (10 Seconds) 300°C
Maximum Junction Temperature (TJmax) 150°C
Thermal Resistance
θJA
Still Air Flow 354°C/W
500LF/Min Air Flow 77°C/W
θJC 46°C/W
ESD Rating (3) 1,000 V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3) Human body model, 100pF discharged through 1.5KΩ
Table 1. Quality Conformance Inspection(1)
Subgroup Description Temp°C
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
12 Settling time at +25
13 Settling time at +125
14 Settling time at -55
(1) Mil-Std-883, Method 5005 - Group A
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SNVS352B –APRIL 2008–REVISED MARCH 2013
LM136-5.0 Electrical Characteristics DC Parameters
The following conditions apply, unless otherwise specified. IR= 1 mA Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
4.6 5.4 V 1
VAdj = 2.5V 4.8 5.6 V 2, 3
5.4 6.6 V 1
VAdj = 1.5V 5.6 6.8 V 2, 3
VRReverse Breakdown Voltage 2.4 4.6 V 1
VAdj = 3.5V 2.8 4.8 V 2, 3
4.87 5.08 V 1
8 1
VAdj = Open 4.83 5.13 V 2, 3
VAdj = 2.5V -260 260 µA 1
IAdj Adjust Current VAdj = 1.5V -260 260 µA 1
VAdj = 3.5V -260 260 µA 1
ΔVR-12 12 mV 1
Reverse Breakdown Change with 0.6mA ≤IR≤15 mA
Current -20 20 mV 2, 3
VFFoward Voltage IR= -10mA -1.5 -0.49 V 1
VStab Temperature Stability VR= Adjusted to 5V 36 mV 2, 3
ZRD Reverse Dynamic Impedance (1) 1.6 Ω1, 2, 3
(1) Specified, not tested.
LM136A–5.0 Electrical Characteristics DC Parameters
The following conditions apply, unless otherwise specified. IR= 1 mA Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
4.6 5.4 V 1
VAdj = 2.5V 4.8 5.6 V 2, 3
5.4 6.6 V 1
VAdj = 1.5V 5.6 6.8 V 2, 3
VRReverse Breakdown Voltage 2.4 4.6 V 1
VAdj = 3.5V 2.8 4.8 V 2, 3
4.93 5.02 V 1
5 9
VAdj = Open 4.88 5.08 V 2, 3
VAdj = 2.5V -260 260 µA 1
IAdj Adjust Current VAdj = 1.5V -260 260 µA 1
VAdj = 3.5V -260 260 µA 1
-12 12 mV 1
Reverse Breakdown Change with
ΔVR0.6mA ≤IR≤15 mA
Current -20 20 mV 2, 3
VFFoward Voltage IR= -10mA -1.5 -0.49 V 1
VStab Temperature Stability VR= Adjusted to 5V 36 mV 2, 3
ZRD Reverse Dynamic Impedance (1) 1.6 Ω1, 2, 3
(1) Specified, not tested.
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Typical Performance Characteristics
Reverse Voltage Change Zener Noise Voltage
Figure 5. Figure 6.
Dynamic Impedance Response Time
Figure 7. Figure 8.
Reverse Characteristics Temperature Drift
Figure 9. Figure 10.
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APPLICATION HINTS
The LM136-5.0 series voltage references are much easier to use than ordinary zener diodes. Their low
impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown
voltage or the temperature coefficient can be adjusted to optimize circuit performance.
Figure 12 shows an LM136-5.0 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the
addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device.
The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer
circuitry.
If minimum temperature coefficient is desired, four diodes can be added in series with the adjustment
potentiometer as shown in Figure 13. When the device is adjusted to 5.00V the temperature coefficient is
minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457.
For proper temperature compensation the diodes should be in the same thermal environment as the LM136-5.0.
It is usually sufficient to mount the diodes near the LM136-5.0 on the printed circuit board. The absolute
resistance of the network is not critical and any value from 2k to 20k will work. Because of the wide adjustment
range, fixed resistors should be connected in series with the pot to make pot setting less critical.
Figure 12. LM136-5.0 with Pot for Adjustment of
Breakdown Voltage (Trim Range = ±1.0V Typical)
Figure 13. Temperature Coefficient Adjustment
(Trim Range = ±0.5V Typical)
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SNVS352B –APRIL 2008–REVISED MARCH 2013
Typical Applications
* Adjust for 6.25V across R1
Figure 14. Precision Power Regulator with Low Temperature Coefficient
Figure 15. 5V Crowbar
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SNVS352B –APRIL 2008–REVISED MARCH 2013
Figure 18. Bipolar Output Reference
Figure 19. Bipolar Output Reference
Figure 20. 5.0V Square Wave Calibrator
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SNVS352B –APRIL 2008–REVISED MARCH 2013
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Figure 21. 10V Buffered Reference
Figure 22. Low Noise Buffered Reference
Figure 23. Wide Input Range Reference
Revision History
Date Released Revision Section Changes
2 MDS datasheets were converted into one Corporate
New Release, Corporate
04/10/08 A datasheet format. MNLM136A-5.0-X Rev 0B0 & LM136-
format 5.0-X Rev 0A0 MDS Data Sheets will be archived.
Changed Title from LM136A-5.0/LM136–5.0QML to
10/26/2010 B Data Sheet Title LM136A-5.0QML/LM136–5.0QML. Revision A will be
Archived.
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SNVS352B –APRIL 2008–REVISED MARCH 2013
Date Released Revision Section Changes
03/20/2013 B All Sections Changed layout of National Data Sheet to TI format
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PACKAGE OPTION ADDENDUM
www.ti.com 11-Apr-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
8418002XA ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 8418002XA Q
LM136AH-5.0-SMD ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 8418002XA Q
LM136AH-5.0/883 ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 LM136A-5.0 Q
LM136H-5.0/883 ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 LM136-5.0 Q
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 11-Apr-2013
Addendum-Page 2
OTHER QUALIFIED VERSIONS OF LM136-5.0QML, LM136-5.0QML-SP :
•Military: LM136-5.0QML
•Space: LM136-5.0QML-SP
NOTE: Qualified Version Definitions:
•Military - QML certified for Military and Defense Applications
•Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
MECHANICAL DATA
NDV0003H
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H03H (Rev F)
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