FGH40N60SMDF - Fairchild

tm

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

March 2011

Absolute Maximum Ratings

Symbol Description Ratings Units

VCES Collector to Emitter Voltage 600 V

VGES Gate to Emitter Voltage ± 20 V

ICCollector Current @ TC = 25oC80 A

Collector Current @ TC = 100oC40 A

ICM (1) Pulsed Collector Current 120 A

IFDiode Forward Current @ TC = 25oC40 A

Diode Forward Current @ TC = 100oC20 A

IFM (1) Pulsed Diode Maximum Forward Current 120 A

PDMaximum Power Dissipation @ TC = 25oC349 W

Maximum Power Dissipation @ TC = 100oC174 W

TJ Operating Junction Temperature -55 to +175 oC

Tstg Storage Temperature Range -55 to +175 oC

TLMaximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 oC

Notes:

1: Repetitive rating: Pulse widt h limited by max . junction temperatur e

FGH40N60SMDF

600V, 40A Field Stop IGBT

G

E

C

Features

• Maximum Junction Temperature : TJ =175oC

• Positive Temperaure Co-efficient for easy parallel operating

• High current capability

• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A

• High input impedance

• Fast switching

• Tighten Parameter Distribution

• RoHS compliant

Applications

• Solar Inverter, UPS, SMPS, PFC

• Induction Heating

General Description

Using Novel Field Stop IGBT Technology, Fair child’s new series

of Field Stop IGBTs offer the optimum performance for Solar

Inverter, U PS, SMPS, IH and PFC applications where low con-

duction and switching losses are essential.

2www.fairchildsemi.com

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

Thermal Characteristics

Symbol Parameter Typ. Max. Units

RθJC(IGBT) Thermal Resistance, Junction to Case -0.43 oC/W

RθJC(Diode) Thermal Resistance, Junction to Case -1.45 oC/W

RθJA Thermal Resistance, Junction to Ambient -40 oC/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FGH40N60SMDF FGH40N60SMDF TO-247 - - 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA600 - - V

ΔBVCES

ΔTJ

Temperature Coefficient of Breakdown

Voltage VGE = 0V, IC = 250μA-0.6 -V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 μA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 3.5 4.5 6.0 V

VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V -1.9 2.5 V

IC = 40A, VGE = 15V,

TC = 175oC-2.1 -V

Dynamic Characteristics

Cies Input Capacitance VCE = 30V, VGE = 0V,

f = 1MHz

-1880 -pF

Coes Output Capacitance -180 -pF

Cres Reverse Transfer Capacitance -50 -pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 400V, IC = 40A,

RG = 6Ω, VGE = 15V,

Inductive Load, TC = 25oC

-12 16 ns

trRise Time -20 28 ns

td(off) Turn-Off Delay Time -92 120 ns

tfFall Time -13 17 ns

Eon Turn-On Switching Loss -1.3 2.0 mJ

Eoff Turn-Off Switching Loss -0.26 0.34 mJ

Ets Total Switching Loss -1.56 2.34 mJ

td(on) Turn-On Delay Time

VCC = 400V, IC = 40A,

RG = 6Ω, VGE = 15V,

Inductive Load, TC = 175oC

-15 -ns

trRise Time -22 -ns

td(off) Turn-Off Delay Time -116 -ns

tfFall Time -16 -ns

Eon Turn-On Switching Loss -2.1 -mJ

Eoff Turn-Off Switching Loss -0.6 -mJ

Ets Total Switching Loss -2.7 -mJ

3www.fairchildsemi.com

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

Electrical Characteristics of the IGBT (Continued)

Symbol Parameter Test Conditions Min. Typ. Max Units

QgTotal Gate Charge VCE = 400V, IC = 40A,

VGE = 15V

-119 180 nC

Qge Gate to Emitter Charge -13 20 nC

Qgc Gate to Collector Charge -58 90 nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

VFM Diode Forward Voltage IF = 20A TC = 25oC - 1.3 1.7 V

TC = 175oC - 1.15 -

Erec Reverse Recovery Energy

IF =20A, dIF/dt = 200A/μs

TC = 175oC - 138 -uJ

trr Diode Reverse Recovery Time TC = 25oC - 70 100 ns

TC = 175oC - 210 -

Qrr Diode Reverse Recovery Charge TC = 25oC - 250 350 nC

TC = 175oC - 1875 -

4www.fairchildsemi.com

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE

Temperature at Variant Current Level

0246

0

20

40

60

80

100

120

VGE = 8V

20V

TC = 25oC

15V 12V

10V

Collector Current, IC [A]

Co lle c to r-Em itte r Volta g e , V CE [V ]

0246

0

20

40

60

80

100

120

VGE = 8V

20V

TC = 175oC

15V 12V

10V

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

01234

0

20

40

60

80

100

120

Co mm o n Emitter

VGE = 15V

TC = 25oC

TC = 175oC

Collector Current, IC [A]

Co llec to r -E mitter Vo ltag e , V

CE

[V]

024681012

0

30

60

90

120 Comm on Em itter

VCE = 20V

TC = 25oC

TC = 175oC

Collector Current, IC [A]

Gate-Emitter Voltage,V

GE

[V]

25 50 75 100 125 150 175

1.0

1.5

2.0

2.5

3.0

80A

40A

IC = 20A

Common Em itter

VGE = 15V

Collector-Emitter Voltage, VCE [V]

Collector-EmitterCase Temperature, TC [oC]

4 8 12 16 20

0

4

8

12

16

20

IC = 20A

40A 80A

Common Emitter

TC = -40oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, V

GE

[V]

5www.fairchildsemi.com

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 7. Saturatio n Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance

4 8 12 16 20

0

4

8

12

16

20

80A

IC = 20A

40A

Common Emitter

TC = 175oC

Collector-Emitter Voltage, VCE [V]

Gate-E m itter Vo ltage , V

GE

[V]

4 8 12 16 20

0

4

8

12

16

20

IC = 20A

40A 80A

Common Emitter

TC = 25oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, V

GE

[V]

0.1 1 10

0

1000

2000

3000

4000

Common Emitter

VGE = 0V, f = 1MHz

TC = 25oC

Cres

Coes

Cies

Capacitance [pF]

Collector-Emitter Voltage, VCE [V] 30

0 40 80 120

0

3

6

9

12

15

400V

Common E m itter

TC = 25oC

300V

VCC = 200V

Gate-Emitter Voltage, VGE [V]

Gate Charge, Q

g

[nC]

1 10 100 1000

0.01

0.1

1

10

100

300

1ms

10 ms

DC

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. S in g le Puls e

10μs

100μs

Collector Current, Ic [A]

Collector-Em itter Voltag e, VCE [V ]

0 1020304050

1

10

100

Common Emitter

VCC = 400V, VGE = 15V

IC = 40A

TC = 25oC

TC = 175oC

td(on)

tr

Switching Time [ns]

Gate Resistance, R

G

[Ω]

6www.fairchildsemi.com

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.

Gate Resistance Collector Current

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.

Collector Current Gate Resistance

Figure 17. Switching Loss vs. Figure 18. Turn off Switching

Collector Current SOA Characteristics

0 1020304050

1

10

100

1000

Com mon E mitter

VCC = 400V , VGE = 15V

IC = 40A

TC = 25oC

TC = 175oC

td(off)

tf

Switching Time [ns]

Gate Resistance, RG [Ω]

20 30 40 50 60 70 80

1

10

100

1000

Common Emitter

VGE = 15V, RG = 6Ω

TC = 25oC

TC = 175oC tr

td(on)

Switching Time [ns]

Collec to r C u rre n t, IC [A]

20 30 40 50 60 70 80

1

10

100

1000

Common Emitter

VGE = 15V, RG = 6Ω

TC = 25oC

TC = 175oC

td(off)

tf

Switching Time [ns]

Collector Current, IC

[

A

]

0 1020304050

0.1

1

5

Comm on Em itter

VCC = 400V , VGE = 15V

IC = 40A

TC = 25oC

TC = 175oC

Eon

Eoff

Switching Loss [mJ]

Gate Resistance

,

R

G

[

Ω

]

20 30 40 50 60 70 80

0.1

1

6

Comm on Emitter

VGE = 15V, RG = 6Ω

TC = 25oC

TC = 175oC

Eon

Eoff

Switching Loss [mJ]

Collec t or C u rre n t, IC [A]

1 10 100 1000

1

10

100

200

Safe Op eratin g Area

VGE = 15V, TC = 175oC

Collector Current, IC [A]

Co llec tor-Emitter Voltage, V CE [V]

7www.fairchildsemi.com

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 19. Current Derating Figure 20. Load Current Vs. Frequency

Figure 21. Forward Characteristics Figure 22. Reverse Current

Figure 23. Stored Charge Figure 24. Reverse Recovery Time

25 50 75 100 125 150 175

10

20

30

40

50

60

70

80

90

Common Em itter

VGE = 15V

Collector Current, IC [A]

Collector-EmitterCase Temperature, TC [oC]

1k 10k 100k 1M

0

10

20

30

40

50

60

70

80

90

100

110

120

Tc = 75oC

Square Wave

TJ < 175oC, D = 0.5, VCE = 400V

VGE = 15/0V, RG = 6Ω

Collector Current, IC [A]

Switching Frequency, f [Hz]

Tc = 100oC

0 0.5 1.0 1.5 2.0 2.5

1

10

100

TC = 25oC

TC = 175oC

Forward Voltage, V

F

[V]

Forward Current, IF [A]

TC = 25oC

TC = 175oC

0 100 200 300 400 500 600

0.001

0.01

0.1

1

10

100

1000

TC = 25oC

TC = 150oC

TC = 75oC

Reverse Current, ICES [uA]

Reverse Voltage,VR [V]

0 5 10 15 20 25 30 35 40 45

0

250

500

750

1000

1250

1500

1750

2000

2250

2500

2750

TC = 25oC

TC = 175oC

di/dt = 2 00 A/μsdi/dt = 100A/μs

Stored Recovery Charge, Q

rr

[nC]

Forwad Current, IF [A]

0 5 10 15 20 25 30 35 40 45

0

50

100

150

200

250

300

350

400

TC = 25oC

TC = 175oC

di/dt = 200A/μs

di/dt = 100A/μs

Reverse Recovery Time, trr [ns]

Forward Current, IF [A]

8www.fairchildsemi.com

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 25.Transient Therma l Impedance of IGBT

1E-5 1E-4 1E-3 0.01 0.1 1

0.001

0.01

0.1

1

0.01

0.02

0.1

0.05

0.2

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

0.5

t1

PDM

t2

9www.fairchildsemi.com

FGH40N60SMDF Rev. B1

FGH40N60SMDF 600V, 40A Field Stop IGBT

Mechanical Dimensions

TO - 247AB (FKS PKG CODE 001)

FGH40N60SMDF 600V, 40A Field Stop IGBT

FGH40N60SMDF Rev. B1 www.fairchildsemi.com10

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tm

®

tm

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