AO 2IMOS This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear PLE I FIELD EFFECT POWER TRANSISTOR IRFF220,221 3.5 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 0 Preliminary N-CHANNEL ZB CASE STYLE TO-205AF (TO-39) DIMENSIONS ARE IN INCHES ANO (MILLIMETERS) - 0.350-0.370 transfer characteristics makes it well suited for many linear (8.650-5 396) ooisoas applications such as audio amplifiers and servo motors. "Te 001-8.500) 0.019-0.033 Features aor (0A62 0836) mae Polysilicon gate Improved stability and reliability ; mane 0.008-0.018 1 Yo Us ORAIN e No secondary breakdown Excellent ruggedness (0.228-0.487) SA oe Ultra-fast switching Independent of temperature mana . MIN 74826-5334) Voltage controlled High transconductance Low input capacitance Reduced drive requirement zea ; ay - . 0.028-0.034 Na. Excellent thermal stability Ease of paralleling (0.717-0.864), SZ a, {ree | _veem.s [| tenm2 | Terma | [to-20sar | source | cate | onan | maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRFF220 IRFF221 UNITS Drain-Source Voltage Vpss 200 150 Volts Drain-Gate Voltage, Ras = 1MO VoGrR 200 150 Volts Continuous Drain Current @ To = 25C Ip 3.5 3.5 A Pulsed Drain Current lom 14 14 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 20 20 Watts Derate Above 25C 1.6 1.6 w/?C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rejc 6.25 6.25 C/W Thermal Resistance, Junction to Ambient Raja 175 175 C/W Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 273electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX UNIT off characteristics Drain-Source Breakdown Voltage IRFF220 | BVpss 200 _ _ Volts (Vas = OV, Ip = 250 A) IRFF221 150 _ Zero Gate Voltage Drain Current lpss (Vpg = Max Rating, Ves = OV, To = 25C) _ _ 250 LA (Vpg = Max Rating, x 0.8, Vag = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | Vas(tn) 2.0 - 4.0 Volts (Vos = Vas, |p = 250 uA) On-State Drain Current | 3.5 _ _ A (Vas = 10V, Vps = 10V) D(ON) . Static Drain-Source On-State Resistance (Vag = 10V, Ip = 2.0A) Rps(ON) _- _- 0.8 Ohms Forward Transconductance (Vps = 10V, Ip = 2.0A) Sts 1.2 - mhos dynamic characteristics Input Capacitance Vas = 10V Ciss _ = 600 pF Output Capacitance Vps = 25V Coss _ _ 300 pF Reverse Transfer Capacitance f = 1 MHz Crss - _ 80 pF switching characteristics* Turn-on Delay Time Vps = 90V ta(on) _ 20 _ ns Rise Time Ip = 2.0A, Vag = 15V tr _ 30 _ ns Turn-off Delay Time Raen = 500, Res = 12.59 ta (off) _ 50 _ ns Fall Time (Res (EQuiv.) = 10) tf _ 30 _ ns source-drain diode ratings and characteristics* Continuous Source Current Ig _ _ 3.5 A Pulsed Source Current Iso _ 14 A Diode Forward Voltage _ _ (To = 28C, Vgg = OV, Ig = 3.5A) Vsp 2.0 Volts Reverse Recovery Time ter _ 350 ns (Ig = 3.5A, dlg/dt = 100A/usec, To = 125C) QrA - 2.3 _ pC *Pulse Test: Pulse width <= 300 ys, duty cycle = 2% 20 10 8 6 4 1.0 0.8 0.6 0.4 tp, DRAIN CURRENT (AMPERES) To= 28C Ty * 180C MAX. 02 Rthuc * 6.25KAV SINGLE PULSE OA TION IN THIS AREA 1S LIMITED BY Aosion) 0.05 1 2 4 6 810 20 40 60 80100 Vp, DRAIN-TO-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 274 CONDITIONS: Rps(ON) CONDITIONS: Ip * 2.0 A, Vag = 10V V@s(TH) CONDITIONS: Ip = 250uA, Vs = Vas Rosion) AND Vegcriay NORMALIZED -40 0 40 80 Tj, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Roygion, AND Vagiry) VS. TEMP. 120 160