MKI 80-06T6K IGBT Modules H-Bridge IC25 = 89 A VCES = 600 V VCE(sat) typ. = 1.8 V Trench IGBT Preliminary data Part name (Marking on product) MKI 80-06T6K 10/17/18/23 15 21 16 22 8 11/12 19/20 7 5 1 6 2 3/4/9/24 Features: Application: Package: * Trench IGBT technology * Low saturation voltage * Low switching losses * Square RBSOA, no latch up * High short circuit capability * Positive temperature coefficient for easy parallelling * MOS input, voltage controlled * Ultra fast free wheeling diodes * Solderable pins for PCB mounting * Space saving * Reduced protection circuits * AC motor control * AC servo and robot drives * Power supplies * Industry standard E1-pack * Designed for wave soldering * With copper base plate IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 20120410c 1-5 MKI 80-06T6K IGBTs Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 75 A; VGE = 15 V TVJ = 25C TVJ = 125C VGE(th) gate emitter threshold voltage IC = 1.2 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VCE = 0 V; VGE = 20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM VCEK reverse bias safe operating area RBSOA; VGE = 15 V; RG = 5.1 W; L = 100 H clamped inductive load; TVJ = 125C tSC (SCSOA) short circuit safe operating area VCE = 480 V; VGE = 15 V; RG = 5.1 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) RthCH thermal resistance case to heatsink (per IGBT) Symbol Definitions Conditions VRRM max. repetitive reverse voltage IF25 IF80 forward current Symbol Conditions typ. TVJ = 25C to 150C max. Unit 600 V 20 30 V V TC = 25C TC = 80C 89 67 A A TC = 25C 210 W 2.3 V V 6.5 V 0.5 mA mA 400 nA continuous transient 1.8 2.1 5 1 4620 pF VCE = 480 V; VGE = 15 V; IC = 75 A 470 nC inductive load VCE = 300 V; IC = 75 A VGE = 15 V; RG = 5.1 W 30 20 250 70 2.5 2.8 ns ns ns ns mJ mJ TVJ = 125C A 150 0.9x VCES TVJ = 125C 6 s 0.6 0.2 K/W K/W Diodes Maximum Ratings TC = 25C TC = 80C V 105 67 A A Characteristic Values min. typ. max. TVJ = 25C TVJ = 125C 1.8 1.6 2.2 36 100 VF forward voltage IF = 75 A IRM trr max. reverse recovery current reverse recovery time VR = 300 V; IF = 75 A diF /dt = -600 A/s TVJ = 100C RthJC thermal resistance junction to case (per diode) TVJ = 25C RthCH thermal resistance case to heatsink (per diode) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 600 A ns 0.65 0.25 V V K/W K/W 20120410c 2-5 MKI 80-06T6K Temperature Sensor NTC Symbol Definitions R25 B25/85 resistance Conditions min. TC = 25C 4.45 Ratings typ. max. 4.7 3510 5.0 Unit kW K Module Symbol Definitions Conditions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz Md mounting torque (M4) dS dA creep distance on surface strike distance through air min. Ratings typ. max. Unit 125 175 125 C C C 2500 V~ -40 -40 2.0 2.2 12.7 12.7 Weight Nm mm mm 40 g Equivalent Circuits for Simulation I R0 V0 Ratings Symbol Definitions Conditions V0 R0 IGBT TVJ = 125C 0.9 14.3 V mW V0 R0 free wheeling diode TVJ = 125C 1.25 3 V mW IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved min. typ. max. Unit 20120410c 3-5 MKI 80-06T6K Outline Drawing Dimensions in mm (1 mm = 0.0394") Product Marking Ordering Part Name Standard MKI 80-06T6K Marking on Product Delivering Mode Base Qty Ordering Code MKI80-06T6K IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved Box 10 504061 20120410c 4-5 MKI 80-06T6K 150 120 13 V VGE = 18/17/15 V 11 V 13 V VGE = 18/17/15 V 11 V 100 120 80 90 IC IC TVJ = 25C 9V [A] 60 9V 60 [A] 40 TVJ = 125C 30 0 20 0 1 2 3 0 4 0 1 2 VCE [V] 3 4 VCE [V] Fig. 2 Typical output characteristics Fig. 1 Typical output characteristics 150 150 VCE = 20 V VCE = 20 V 120 120 TVJ = 25C TVJ = 125C IC 90 IC 90 [A] 60 [A] 60 30 30 TVJ = 125C TVJ = 25C 0 0 1 2 0 3 4 6 8 10 12 VGE [V] VCE [V] Fig. 4 Typical transfer characteristics Fig. 3 Typical output characteristics 150 20 120 16 IF 90 VGE 12 [A] [V] 60 VCE = 300 V IC = 75 A VCE = 450 V IC = 75 A 8 4 30 0 0.0 0.5 1.0 1.5 2.0 2.5 VF [V] Fig. 5 Typical forward characteristics FWD IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 0 0 100 200 300 400 500 QG [C] Fig. 6 Typical turn-on gate charge 20120410c 5-5