© 2012 IXYS All rights reserved 1 - 5
20120410c
MKI 80-06T6K
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
Application:
• AC motor control
• AC servo and robot drives
• Power supplies
Features:
• Trench IGBT technology
• Low saturation voltage
• Low switching losses
• Square RBSOA, no latch up
• High short circuit capability
• Positive temperature coefficient
for easy parallelling
• MOS input, voltage controlled
• Ultra fast free wheeling diodes
• Solderable pins for PCB mounting
• Space saving
• Reduced protection circuits
Package:
• Industry standard E1-pack
• Designed for wave soldering
• With copper base plate
Part name (Marking on product)
MKI 80-06T6K
IC25 = 89 A
VCES = 600 V
VCE(sat) typ. = 1.8 V
IGBT Modules
H-Bridge
Trench IGBT
6 2
51
22
10/17/18/23
15
3/4/9/24
19/20
11/12
16
8
7
21
© 2012 IXYS All rights reserved 2 - 5
20120410c
MKI 80-06T6K
IXYS reserves the right to change limits, test conditions and dimensions.
IGBTs
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C to 150°C 600 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
89
67
A
A
Ptot total power dissipation TC = 25°C 210 W
VCE(sat) collector emitter saturation voltage IC = 75 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.3 V
V
VGE(th) gate emitter threshold voltage IC = 1.2 mA; VGE = VCE TVJ = 25°C 5 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 1
0.5 mA
mA
IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V 400 nA
Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 4620 pF
QG(on) total gate charge VCE = 480 V; VGE = 15 V; IC = 75 A 470 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 300 V; IC = 75 A
VGE = ±15 V; RG = 5.1 W
30
20
250
70
2.5
2.8
ns
ns
ns
ns
mJ
mJ
ICM
VCEK
reverse bias safe operating area RBSOA; VGE = ±15 V; RG = 5.1 W; L = 100 µH
clamped inductive load
; TVJ = 125°C
150
0.9x VCES
A
tSC
(SCSOA)
short circuit safe operating area VCE = 480 V; VGE = ±15 V; TVJ = 125°C
RG = 5.1 W; non-repetitive
6 µs
RthJC thermal resistance junction to case (per IGBT) 0.6 K/W
RthCH thermal resistance case to heatsink (per IGBT) 0.2 K/W
Diodes
Symbol Definitions Conditions Maximum Ratings
VRRM max. repetitive reverse voltage 600 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
105
67
A
A
Symbol Conditions Characteristic Values
min. typ. max.
VFforward voltage IF = 75 A TVJ = 25°C
TVJ = 125°C
1.8
1.6
2.2 V
V
IRM
trr
max. reverse recovery current
reverse recovery time
VR = 300 V; IF = 75 A
diF /dt = -600 A/µs TVJ = 100°C
36
100
A
ns
RthJC thermal resistance junction to case (per diode) TVJ = 25°C 0.65 K/W
RthCH thermal resistance case to heatsink (per diode) 0.25 K/W
© 2012 IXYS All rights reserved 3 - 5
20120410c
MKI 80-06T6K
IXYS reserves the right to change limits, test conditions and dimensions.
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/85
resistance TC = 25°C 4.45 4.7
3510
5.0 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
175
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 2500 V~
Mdmounting torque (M4) 2.0 2.2 Nm
dS
dA
creep distance on surface
strike distance through air
12.7
12.7
mm
mm
Weight 40 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V0
R0
IGBT TVJ = 125°C 0.9
14.3
V
mW
V0
R0
free wheeling diode TVJ = 125°C 1.25
3
V
mW
I
V
0
R
0
© 2012 IXYS All rights reserved 4 - 5
20120410c
MKI 80-06T6K
IXYS reserves the right to change limits, test conditions and dimensions.
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MKI 80-06T6K MKI80-06T6K Box 10 504061
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Marking
© 2012 IXYS All rights reserved 5 - 5
20120410c
MKI 80-06T6K
IXYS reserves the right to change limits, test conditions and dimensions.
01234
0
30
60
90
120
150
0 100 200 300 400 500
0
4
8
12
16
20
01234
0
20
40
60
80
100
120
VCE [V]
IC
[A]
9 V
11 V
9 V
11 V
0 1 2 3
0
30
60
90
120
150
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VCE = 20 V
TVJ = 125°C
TVJ = 25°C
13 V
13 V
VGE = 18/17/15 V
Fig. 1 Typical output characteristics
VCE [V]
IC
[A]
Fig. 2 Typical output characteristics
VGE = 18/17/15 V
IC
[A]
VCE [V]
Fig. 3 Typical output characteristics
IC
[A]
VGE [V]
Fig. 4 Typical transfer characteristics
4 6 8 10 12
0
30
60
90
120
150
VCE = 20 V
0.0 0.5 1.0 1.5 2.0 2.5
0
30
60
90
120
150
IF
[A]
VF [V]
Fig. 5 Typical forward characteristics FWD
VGE
[V]
QG [μC]
Fig. 6 Typical turn-on gate charge
VCE = 450 V
IC = 75 A
VCE = 300 V
IC = 75 A
