Ultralow Noise XFET® Voltage References
with Current Sink and Source Capability
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C
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Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
FEATURES
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.5 V output
No external capacitor required
Low temperature coefficient
A Grade: 10 ppm/°C maximum
B Grade: 3 ppm/°C maximum
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range
ADR430: 4.1 V to 18 V
ADR431: 4.5 V to 18 V
ADR433: 5.0 V to 18 V
ADR434: 6.1 V to 18 V
ADR435: 7.0 V to 18 V
ADR439: 6.5 V to 18 V
High output source and sink current: +30 mA and −20 mA
Wide temperature range: −40°C to +125°C
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Medical instruments
Industrial process control systems
Optical control circuits
Precision instruments
PIN CONFIGURATIONS
NOTES
1. NC = NO CONNECT
2. TP = TEST PIN (DO NOT CONNECT)
ADR43x
TOP VIEW
(Not to Scale)
TP
1
V
IN 2
NC
3
GND
4
TP
NC
V
OUT
TRIM
8
7
6
5
04500-0-001
Figure 1. 8-Lead MSOP (RM-8)
ADR43x
TOP VIEW
(Not to Scale)
TP 1
VIN 2
NC 3
GND 4
TP
NC
VOUT
TRIM
8
7
6
5
04500-0-041
NOTES
1. NC = NO CONNEC
T
2
. TP = TEST PIN (DO NOT CONNECT)
Figure 2. 8-Lead SOIC_N (R-8)
GENERAL DESCRIPTION
The ADR43x series is a family of XFET voltage references
featuring low noise, high accuracy, and low temperature drift
performance. Using Analog Devices, Inc., patented temperature
drift curvature correction and XFET (eXtra implanted junction
FET) technology, voltage change vs. temperature nonlinearity in
the ADR43x is minimized.
The XFET references operate at lower current (800 µA) and
supply headroom (2 V) than buried Zener references. Buried
Zener references require more than 5 V headroom for operations.
The ADR43x XFET references are the only low noise solutions
for 5 V systems.
The ADR43x family has the capability to source up to 30 mA of
output current and sink up to 20 mA. It also comes with a trim
terminal to adjust the output voltage over a 0.5% range without
compromising performance.
The ADR43x is available in 8-lead MSOP and narrow SOIC
packages. All versions are specified over the extended industrial
temperature range of −40°C to +125°C.
Table 1. Selection Guide
Model
Output
Voltage (V)
Accuracy, ±
(mV)
Temperature
Coefficient
(ppm/°C)
ADR430A 2.048 3 10
ADR430B 2.048 1 3
ADR431A 2.500 3 10
ADR431B 2.500 1 3
ADR433A 3.000 4 10
ADR433B 3.000 1.5 3
ADR434A 4.096 5 10
ADR434B 4.096 1.5 3
ADR435A 5.000 6 10
ADR435B 5.000 2 3
ADR439A 4.500 5.5 10
ADR439B 4.500 2 3
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 2 of 24
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Pin Configurations ........................................................................... 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
ADR430 Electrical Characteristics............................................. 3
ADR431 Electrical Characteristics............................................. 4
ADR433 Electrical Characteristics............................................. 5
ADR434 Electrical Characteristics............................................. 6
ADR435 Electrical Characteristics............................................. 7
ADR439 Electrical Characteristics............................................. 8
Absolute Maximum Ratings............................................................ 9
Thermal Resistance ...................................................................... 9
ESD Caution.................................................................................. 9
Typical Performance Characteristics ........................................... 10
Theory of Operation ...................................................................... 15
Basic Voltage Reference Connections...................................... 15
Noise Performance ..................................................................... 15
Turn-On Time ............................................................................ 15
Applications..................................................................................... 16
Output Adjustment .................................................................... 16
Reference for Converters in Optical Network Control
Circuits......................................................................................... 16
Negative Precision Reference Without Precision Resistors.. 16
High Voltage Floating Current Source.................................... 17
Kelvin Connection ..................................................................... 17
Dual-Polarity References........................................................... 17
Programmable Current Source ................................................ 18
Programmable DAC Reference Voltage .................................. 18
Precision Voltage Reference for Data Converters.................. 19
Precision Boosted Output Regulator....................................... 19
Outline Dimensions ....................................................................... 20
Ordering Guide .......................................................................... 21
REVISION HISTORY
8/06—Rev. B to Rev. C
Updated Format..................................................................Universal
Changes to Table 1............................................................................ 1
Changes to Table 3............................................................................ 4
Changes to Table 4............................................................................ 5
Changes to Table 7............................................................................ 8
Changes to Figure 26...................................................................... 14
Changes to Figure 31...................................................................... 16
Updated Outline Dimensions....................................................... 20
Changes to Ordering Guide .......................................................... 21
9/04—Rev. A to Rev. B
Added New Grade ..............................................................Universal
Changes to Specifications.................................................................3
Replaced Figure 3, Figure 4, Figure 5........................................... 10
Updated Ordering Guide .............................................................. 21
6/04—Rev. 0 to Rev. A
Changes to Format .............................................................Universal
Changes to the Ordering Guide ................................................... 20
12/03—Revision 0: Initial Version
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 3 of 24
SPECIFICATIONS
ADR430 ELECTRICAL CHARACTERISTICS
VIN = 4.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 2.045 2.048 2.051 V
B Grade 2.047 2.048 2.049 V
INITIAL ACCURACY VOERR
A Grade 3 mV
0.15 %
B Grade 1 mV
0.05 %
TEMPERATURE COEFFICIENT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ∆VO/∆VIN V
IN = 4.1 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ∆VO/∆IL I
L = 0 mA to 10 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA
∆VO/∆IL I
L = −10 mA to 0 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 560 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.5 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 60 nV/√Hz
TURN-ON SETTLING TIME tR C
IN = 0 10 μs
LONG-TERM STABILITY1∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 20 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz –70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE
OPERATING RANGE VIN 4.1 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 4 of 24
ADR431 ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 2.497 2.500 2.503 V
B Grade 2.499 2.500 2.501 V
INITIAL ACCURACY VOERR
A Grade 3 mV
0.12 %
B Grade 1 mV
0.04 %
TEMPERATURE COEFFICIENT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ∆VO/∆VIN V
IN = 4.5 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ∆VO/∆IL I
L = 0 mA to 10 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA
∆VO/∆IL I
L = −10 mA to 0 mA, VIN = 5.0 V, −40°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 580 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.5 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 80 nV/√Hz
TURN-ON SETTLING TIME tR C
IN = 0 10 μs
LONG-TERM STABILITY1∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 20 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE
OPERATING RANGE VIN 4.5 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 5 of 24
ADR433 ELECTRICAL CHARACTERISTICS
VIN = 5.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 2.996 3.000 3.004 V
B Grade 2.9985 3.000 3.0015 V
INITIAL ACCURACY VOERR
A Grade 4 mV
0.13 %
B Grade 1.5 mV
0.05 %
TEMPERATURE COEFFICIENT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ∆VO/∆VIN V
IN = 5 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ∆VO/∆IL I
L = 0 mA to 10 mA, VIN = 6 V, −40°C < TA < +125°C 15 ppm/mA
∆VO/∆IL I
L = −10 mA to 0 mA, VIN = 6 V, −40°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 590 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 3.75 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 90 nV/√Hz
TURN-ON SETTLING TIME tR C
IN = 0 10 μs
LONG-TERM STABILITY1∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 20 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE
OPERATING RANGE VIN 5 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 6 of 24
ADR434 ELECTRICAL CHARACTERISTICS
VIN = 6.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 4.091 4.096 4.101 V
B Grade 4.0945 4.096 4.0975 V
INITIAL ACCURACY VOERR
A Grade 5 mV
0.12 %
B Grade 1.5 mV
0.04 %
TEMPERATURE COEFFICIENT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ∆VO/∆VIN V
IN = 6.1 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ∆VO/∆IL I
L = 0 mA to 10 mA, VIN = 7 V, −40°C < TA < +125°C 15 ppm/mA
∆VO/∆IL I
L = −10 mA to 0 mA, VIN = 7 V, −40°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 595 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 6.25 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 100 nV/√Hz
TURN-ON SETTLING TIME tR C
IN = 0 10 μs
LONG-TERM STABILITY1∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 20 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE
OPERATING RANGE VIN 6.1 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 7 of 24
ADR435 ELECTRICAL CHARACTERISTICS
VIN = 7.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 6.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 4.994 5.000 5.006 V
B Grade 4.998 5.000 5.002 V
INITIAL ACCURACY VOERR
A Grade 6 mV
0.12 %
B Grade 2 mV
0.04 %
TEMPERATURE COEFFICIENT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ∆VO/∆VIN V
IN = 7 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ∆VO/∆IL I
L = 0 mA to 10 mA, VIN = 8 V, −40°C < TA < +125°C 15 ppm/mA
∆VO/∆IL I
L = −10 mA to 0 mA, VIN = 8 V, −40°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 620 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 8 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 115 nV/√Hz
TURN-ON SETTLING TIME tR C
IN = 0 10 μs
LONG-TERM STABILITY1∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 20 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 7 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 8 of 24
ADR439 ELECTRICAL CHARACTERISTICS
VIN = 6.5 V to 18 V, IL = 0 mV, TA = 25°C, unless otherwise noted.
Table 7.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 4.4946 4.500 4.5054 V
B Grade 4.498 4.500 4.502 V
INITIAL ACCURACY VOERR
A Grade 5.5 mV
0.12 %
B Grade 2 mV
0.04 %
TEMPERATURE COEFFICIENT TCVO
A Grade −40°C < TA < +125°C 2 10 ppm/°C
B Grade −40°C < TA < +125°C 1 3 ppm/°C
LINE REGULATION ∆VO/∆VIN V
IN = 6.5 V to 18 V, −40°C < TA < +125°C 5 20 ppm/V
LOAD REGULATION ∆VO/∆IL I
L = 0 mA to 10 mA, VIN = 6.5 V, −40°C < TA < +125°C 15 ppm/mA
∆VO/∆IL I
L = −10 mA to 0 mA, VIN = 6.5 V, −40°C < TA < +125°C 15 ppm/mA
QUIESCENT CURRENT IIN No load, −40°C < TA < +125°C 600 800 μA
VOLTAGE NOISE eN p-p 0.1 Hz to 10.0 Hz 7.5 μV p-p
VOLTAGE NOISE DENSITY eN 1 kHz 110 nV/√Hz
TURN-ON SETTLING TIME tR C
IN = 0 10 μs
LONG-TERM STABILITY1∆VO 1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 20 ppm
RIPPLE REJECTION RATIO RRR fIN = 10 kHz −70 dB
SHORT CIRCUIT TO GND ISC 40 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 6.5 18 V
SUPPLY VOLTAGE HEADROOM VIN − VO 2 V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 9 of 24
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 8.
Parameter Rating
Supply Voltage 20 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature, Soldering (60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 9. Thermal Resistance
Package Type θJA θ
JC Unit
8-Lead SOIC_N (R-Suffix) 130 43 °C/W
8-Lead MSOP (RM-Suffix) 190 °C/W
ESD CAUTION
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 10 of 24
TYPICAL PERFORMANCE CHARACTERISTICS
Default conditions: ±5 V, CL = 5 pF, G = 2, Rg = Rf = 1 kΩ, RL = 2 kΩ, VO = 2 V p-p, f = 1 MHz, TA = 25°C, unless otherwise noted.
2.4995
OUTPUT VOLTAGE (V)
2.5009
2.5007
2.5005
2.5003
2.5001
2.4999
2.4997
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-015
Figure 3. ADR431 Output Voltage vs. Temperature
OUTPUT VOLTAGE (V)
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-016
4.0950
4.0980
4.0975
4.0970
4.0965
4.0960
4.0955
Figure 4. ADR434 Output Voltage vs. Temperature
OUTPUT VOLTAGE (V)
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-017
4.9990
5.0025
5.0020
5.0015
5.0010
5.0005
5.0000
4.9995
Figure 5. ADR435 Output Voltage vs. Temperature
0.3
0.4
0.5
0.6
0.7
0.8
SUPPLY CURRENT (mA)
8104 6 12 14 16
INPUT VOLTAGE (V)
04500-0-018
+125°C
+25°C
–40°C
Figure 6. ADR435 Supply Current vs. Input Voltage
400
450
500
550
600
650
700
SUPPLY CURRENT (μA)
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-019
Figure 7. ADR435 Supply Current vs. Temperature
0.40
0.42
0.44
0.46
0.48
0.50
0.52
0.54
0.56
0.58
0.60
SUPPLY CURRENT (mA)
10 126 8 14 16 18
INPUT VOLTAGE (V)
04500-0-020
+125°C
+25°C
–40°C
Figure 8. ADR431 Supply Current vs. Input Voltage
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 11 of 24
400
430
460
490
520
550
580
610
SUPPLY CURRENT (μA)
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-021
Figure 9. ADR431 Supply Current vs. Temperature
0
3
6
9
12
15
LOAD REGULATION (ppm/mA)
I
L
= 0mA to 10mA
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-022
Figure 10. ADR431 Load Regulation vs. Temperature
0
3
6
9
12
15
LOAD REGULATION (ppm/mA)
I
L
= 0mA to 10mA
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-023
Figure 11. ADR435 Load Regulation vs. Temperature
0
0.5
1.0
1.5
2.0
2.5
DIFFERENTIAL VOLTAGE (V)
LOAD CURRENT (mA)
–5–10 0 5 10
04500-0-024
–40°C
+25°C
+125°C
Figure 12. ADR431 Minimum Input/Output
Differential Voltage vs. Load Current
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
MINIMUM HEADROOM (V)
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-025
NO LOAD
Figure 13. ADR431 Minimum Headroom vs. Temperature
0
0.5
1.0
1.5
2.0
2.5
DIFFERENTIAL VOLTAGE (V)
LOAD CURRENT (mA)
–5–10 0 5 10
04500-0-026
–40°C
+25°C
+125°C
Figure 14. ADR435 Minimum Input/Output
Differential Voltage vs. Load Current
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 12 of 24
0.9
1.1
1.3
1.5
1.7
1.9
MINIMUM HEADROOM (V)
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-027
NO LOAD
Figure 15. ADR435 Minimum Headroom vs. Temperature
–4
0
4
8
12
16
20
LINE REGULATION (ppm/V)
V
IN
= 7V TO 18V
TEMPERATURE (°C)
–40 –25 –10 5 20 35 50 65 80 95 110 125
04500-0-028
Figure 16. ADR435 Line Regulation vs. Temperature
04500-0-030
C
IN
= 0.01µF
NO LOAD
V
O
= 1V/DIV
V
IN
= 2V/DIV
TIME = 4µs/DIV
Figure 17. ADR431 Turn-On Response
04500-0-031
C
L
= 0.01µF
NO INPUT CAPACITOR
V
O
= 1V/DIV
V
IN
= 2V/DIV
TIME = 4µs/DIV
Figure 18. ADR431 Turn-On Response, 0.01 μF Load Capacitor
04500-0-032
C
IN
= 0.01µF
NO LOAD
V
O
= 1V/DIV
V
IN
= 2V/DIV TIME = 4µs/DIV
Figure 19. ADR431 Turn-Off Response
04500-0-033
BYPASS CAPACITOR = 0µF
V
O
= 50mV/DIV
TIME = 100µs/DIV
LINE
INTERRUPTION
V
IN
= 500mV/DIV
Figure 20. ADR431 Line Transient Response, No Capacitors
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 13 of 24
04500-0-034
BYPASS CAPACITOR = 0.1µF
V
O
= 50mV/DIV
TIME = 100µs/DIV
LINE
INTERRUPTION
V
IN
= 500mV/DIV
Figure 21. ADR431 Line Transient Response, 0.1 μF Bypass Capacitor
04500-0-035
1μV/DIV
TIME = 1s/DIV
Figure 22. ADR431 0.1 Hz to 10.0 Hz Voltage Noise
04500-0-036
TIME = 1s/DIV
50μV/DIV
Figure 23. ADR431 10 Hz to 10 kHz Voltage Noise
04500-0-037
TIME = 1s/DIV
2μV/DIV
Figure 24. ADR435 0.1 Hz to 10.0 Hz Voltage Noise
04500-0-038
TIME = 1s/DIV
50μV/DIV
Figure 25. ADR435 10 Hz to 10 kHz Voltage Noise
0
2
4
6
8
10
12
14
NUMBER OF PARTS
DEVIATION (PPM)
–110 –90 –70 –50 –30 –10 10 30 50 70 90 110
04500-0-029
Figure 26. ADR431 Typical Hysteresis
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 14 of 24
0
5
10
15
20
25
30
35
40
45
50
OUTPUT IMPEDANCE (
Ω
)
FREQUENCY (Hz)
100 10k1k 100k
04500-0-039
ADR435
ADR433
ADR430
Figure 27. Output Impedance vs. Frequency
–150
–130
–110
–90
–70
–50
RIPPLE REJECTION (dB)
–30
–10
10
10 100 1k 10k 100k 1M
FREQUENCY (Hz)
04500-0-040
Figure 28. Ripple Rejection Ratio
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 15 of 24
THEORY OF OPERATION
The ADR43x series of references uses a new reference generation
technique known as XFET (eXtra implanted junction FET).
This technique yields a reference with low supply current, good
thermal hysteresis, and exceptionally low noise. The core of the
XFET reference consists of two junction field-effect transistors
(JFETs), one of which has an extra channel implant to raise its
pinch-off voltage. By running the two JFETs at the same drain
current, the difference in pinch-off voltage can be amplified and
used to form a highly stable voltage reference.
The intrinsic reference voltage is around 0.5 V with a negative
temperature coefficient of about –120 ppm/°C. This slope is
essentially constant to the dielectric constant of silicon and can
be closely compensated by adding a correction term generated
in the same fashion as the proportional-to-temperature (PTAT)
term used to compensate band gap references. The primary
advantage of an XFET reference is its correction term, which is
some 30 times lower and requires less correction than that of a
band gap reference. Because most of the noise of a band gap
reference comes from the temperature compensation circuitry,
the XFET results in much lower noise.
Figure 29 shows the basic topology of the ADR43x series. The
temperature correction term is provided by a current source
with a value designed to be proportional to absolute temperature.
The general equation is
( )
PTAT
P
OUT IR1VGV ×−= (1)
where:
G is the gain of the reciprocal of the divider ratio.
∆VP is the difference in pinch-off voltage between the two JFETs.
IPTAT is the positive temperature coefficient correction current.
ADR43x devices are created by on-chip adjustment of R2
and R3 to achieve 2.048 V or 2.500 V, respectively, at the
reference output.
**
I
PTAT
I
1
I
1
*EXTRA CHANNEL IMPLANT
V
OUT
= G(ΔV
P
–R1
×
I
PTAT
)
R2
V
IN
V
OUT
GND
R3
R1
Δ
V
P
04500-0-002
ADR43x
Figure 29. Simplified Schematic Device
Power Dissipation Considerations
The ADR43x family of references is guaranteed to deliver load
currents to 10 mA with an input voltage that ranges from 4.5 V
to 18 V. When these devices are used in applications at higher
currents, users should use the following equation to account for
the temperature effects due to the power dissipation increases.
AJA
DJ TPT +θ×= (2)
where:
TJ and TA are the junction and ambient temperatures, respectively.
PD is the device power dissipation.
θJA is the device package thermal resistance.
BASIC VOLTAGE REFERENCE CONNECTIONS
Voltage references, in general, require a bypass capacitor
connected from VOUT to GND. The circuit in Figure 30
illustrates the basic configuration for the ADR43x family of
references. Other than a 0.1 µF capacitor at the output to help
improve noise suppression, a large output capacitor at the
output is not required for circuit stability.
+
NOTES:
1. NC = NO CONNECT
2. TP = TEST PIN (DO NOT CONNECT)
1
2
3
45
8
6
7
ADR43x
TOP VIEW
(Not to Scale)
TP
NC
VOUT
TRIM
TP
NC
GND
VIN
10µF 0.1µF
0.1µF
04500-0-003
Figure 30. Basic Voltage Reference Configuration
NOISE PERFORMANCE
The noise generated by the ADR43x family of references is
typically less than 3.75 µV p-p over the 0.1 Hz to 10.0 Hz band
for ADR430, ADR431, and ADR433. Figure 22 shows the
0.1 Hz to 10.0 Hz noise of the ADR431, which is only 3.5 µV p-p.
The noise measurement is made with a band-pass filter made
of a 2-pole high-pass filter with a corner frequency at 0.1 Hz
and a 2-pole low-pass filter with a corner frequency at 10.0 Hz.
TURN-ON TIME
Upon application of power (cold start), the time required for
the output voltage to reach its final value within a specified
error band is defined as the turn-on settling time. Two compo-
nents normally associated with this are the time for the active
circuits to settle and the time for the thermal gradients on the
chip to stabilize. Figure 17 and Figure 18 show the turn-on
settling time for the ADR431.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 16 of 24
APPLICATIONS
OUTPUT ADJUSTMENT
The ADR43x trim terminal can be used to adjust the output
voltage over a ±0.5% range. This feature allows the system
designer to trim system errors out by setting the reference to a
voltage other than the nominal. This is also helpful if the part is
used in a system at temperature to trim out any error. Adjustment
of the output has negligible effect on the temperature perform-
ance of the device. To avoid degrading temperature coefficients,
both the trimming potentiometer and the two resistors need to
be low temperature coefficient types, preferably < 100 ppm/°C.
INPUT
OUTPUT
TRIM
V
IN
V
O
= ±0.5%
GND
R1
470kΩ
R2 10kΩ(ADR430)
15kΩ(ADR431)
R
P
10kΩ
ADR43x
04500-0-004
V
OUT
Figure 31. Output Trim Adjustment
REFERENCE FOR CONVERTERS IN OPTICAL
NETWORK CONTROL CIRCUITS
In Figure 32, the high capacity, all-optical router network
employs arrays of micromirrors to direct and route optical
signals from fiber to fiber without first converting them to
electrical form, which reduces the communication speed. The
tiny micromechanical mirrors are positioned so that each is
illuminated by a single wavelength that carries unique informa-
tion and can be passed to any desired input and output fiber.
The mirrors are tilted by the dual-axis actuators, which are
controlled by precision ADCs and DACs within the system.
Due to the microscopic movement of the mirrors, not only is
the precision of the converters important but the noise
associated with these controlling converters is also extremely
critical. Total noise within the system can be multiplied by the
number of converters employed. Therefore, to maintain the
stability of the control loop for this application, the ADR43x,
with its exceptionally low noise, is necessary.
GND
SOURCE FIBER
GIMBAL + SENSOR
DESTINATION
FIBER
ACTIVATOR
RIGHT
MEMS MIRROR
LASER BEAM
ACTIVATOR
LEFT
AMPL PREAMP AMPL
CONTROL
ELECTRONICS
DAC
ADC
DAC
DSP
ADR431
ADR431
ADR431
04500-0-005
Figure 32. All-Optical Router Network
NEGATIVE PRECISION REFERENCE WITHOUT
PRECISION RESISTORS
In many current-output CMOS DAC applications, where the
output signal voltage must be of the same polarity as the
reference voltage, it is required to reconfigure a current-
switching DAC into a voltage-switching DAC through the use
of a 1.25 V reference, an operational amplifier, and a pair of
resistors. Using a current-switching DAC directly requires an
additional operational amplifier at the output to reinvert the
signal. A negative voltage reference is desirable, because an
additional operational amplifier is not required for either
reinversion (current-switching mode) or amplification (voltage-
switching mode) of the DAC output voltage. In general, any
positive voltage reference can be converted to a negative voltage
reference through the use of an operational amplifier and a pair
of matched resistors in an inverting configuration. The
disadvantage of this approach is that the largest single source of
error in the circuit is the relative matching of the resistors used.
A negative reference can easily be generated by adding a
precision operational amplifier, such as the OP777 or the OP193,
and configuring it as shown in Figure 33. VOUT is at virtual
ground; therefore, the negative reference can be taken directly
from the output of the amplifier. The operational amplifier must
be dual supply and have low offset and rail-to-rail capability, if
negative supply voltage is close to the reference output.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 17 of 24
+
V
DD
–VREF
GND
VIN
VOUT
ADR43x
A1
–VDD
2
6
4
04500-0-006
Figure 33. Negative Reference
HIGH VOLTAGE FLOATING CURRENT SOURCE
The circuit in Figure 34 can be used to generate a floating
current source with minimal self heating. This particular
configuration can operate on high supply voltages determined
by the breakdown voltage of the N-channel JFET.
V
IN
V
OUT
GND
OP90
+
V
S
SST111
VISHAY
2N3904
R
L
2.1kΩ
–V
S
ADR43x
04500-0-007
2
6
4
Figure 34. High Voltage Floating Current Source
KELVIN CONNECTION
In many portable instrumentation applications, where PC board
cost and area go hand in hand, circuit interconnects are very
often of dimensionally minimum width. These narrow lines can
cause large voltage drops if the voltage reference is required to
provide load currents to various functions. In fact, circuit inter-
connects can exhibit a typical line resistance of 0.45 mΩ/square
(1 oz. Cu, for example). Force and sense connections, also
referred to as Kelvin connections, offer a convenient method of
eliminating the effects of voltage drops in circuit wires. Load
currents flowing through wiring resistance produce an error
(VERROR = R × IL) at the load. However, the Kelvin connection of
Figure 35 overcomes the problem by including the wiring
resistance within the forcing loop of the operational amplifier.
Because the amplifier senses the load voltage, the operational
amplifier loop control forces the output to compensate for the
wiring error and to produce the correct voltage at the load.
V
IN
V
OUT
GND
R
LW
R
L
V
OUT
SENSE
V
OUT
FORCE
R
LW
V
IN
2
6
4
ADR43x
A1
OP191
04500-0-008
+
Figure 35. Advantage of Kelvin Connection
DUAL-POLARITY REFERENCES
Dual-polarity references can easily be made with an operational
amplifier and a pair of resistors. In order not to defeat the
accuracy obtained by ADR43x, it is imperative to match the
resistance tolerance as well as the temperature coefficient of all
the components.
6
2
4
5
–
10V
V
IN
V
IN
V
OUT
GND TRIM
R1 R2
U2
R3
V+
V–
+10V
–5V
+5V
10kΩ
1μF 0.1μF
U1
ADR435
OP1177
5kΩ
10kΩ
04500-0-009
Figure 36. +5 V and −5 V References Using ADR435
6
2
4
5
V
IN
V
OUT
GND TRIM
R1
5.6kΩ
U2
V+
V–
+10V
U1
ADR435
OP1177
+2.5V
–2.5V
R2
5.6kΩ
04500-0-010
–10V
Figure 37. +2.5 V and −2.5 V References Using ADR435
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 18 of 24
PROGRAMMABLE CURRENT SOURCE
Together with a digital potentiometer and a Howland current
pump, ADR435 forms the reference source for a programmable
current as
W
B
B
A
LV
R
R1
RR2
I×
⎟
⎟
⎟
⎟
⎠
⎞
⎜
⎜
⎜
⎜
⎝
⎛+
=2
2
(3)
and
REF
N
WV
D
V×= 2 (4)
where:
D is the decimal equivalent of the input code.
N is the number of bits.
In addition, R1' and R2' must be equal to R1 and (R2A + R2B),
respectively. In theory, R2B can be made as small as needed to
achieve the necessary current within the A2 output current
driving capability. In this example, OP2177 can deliver a
maximum output current of 10 mA. Because the current pump
employs both positive and negative feedback, C1 and C2
capacitors are needed to ensure that the negative feedback
prevails and, therefore, avoids oscillation. This circuit also
allows bidirectional current flow if the VA and VB inputs of the
digital potentiometer are supplied with the dual-polarity
references, as shown in Figure 38.
6
2
4
5
V
IN
V
DD
V
OUT
GND
TRIM
C2
10pF
U1
V+
V–
I
L
ADR435
OP2177
R1
50kΩ
OP2177
V–
V+
A2
A1
I
L
V
DD
U2
AD5232
W
A
B
V
SS
R1'
50kΩ
R2'
1kΩ
R2
A
1kΩ
R2
B
10Ω
V
DD
V
SS
C1
10pF
+
VL
–
04500-0-011
Figure 38. Programmable Current Source
PROGRAMMABLE DAC REFERENCE VOLTAGE
By employing a multichannel DAC, such as a quad, 12-bit
voltage output DAC (AD7398), one of its internal DACs and an
ADR43x voltage reference can be used as a common
programmable VREFX for the rest of the DACs. The circuit
configuration is shown in Figure 39.
VREFA
DAC A
VREFB
DAC B
VREFC
DAC C
VREFD
DAC D
VOUTA
VOUTB
VOUTC
VOUTD
VOB =V
REFX (DB)
VOC =V
REFX (DC)
VOD =V
REFX (DD)
ADR43x
AD7398
VIN
VREF
R1 ± 0.1%
R2
±0.1%
04500-0-012
Figure 39. Programmable DAC Reference
The relationship of VREFX to VREF depends on the digital code
and the ratio of R1 and R2, given by
⎟
⎠
⎞
⎜
⎝
⎛×+
⎟
⎠
⎞
⎜
⎝
⎛+×
=
R1
R2D
R1
R2
V
V
N
REF
REFX
2
1
1
(5)
where:
D is the decimal equivalent of the input code.
N is the number of bits.
VREF is the applied external reference.
VREFX is the reference voltage for DAC A to DAC D.
Table 10. VREFX vs. R1 and R2
R1, R2 Digital Code VREF
R1 = R2 0000 0000 0000 2 VREF
R1 = R2 1000 0000 0000 1.3 VREF
R1 = R2 1111 1111 1111 VREF
R1 = 3R2 0000 0000 0000 4 VREF
R1 = 3R2 1000 0000 0000 1.6 VREF
R1 = 3R2 1111 1111 1111 VREF
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 19 of 24
PRECISION VOLTAGE REFERENCE FOR
DATA CONVERTERS
The ADR43x family has a number of features that make it ideal
for use with ADCs and DACs. The exceptional low noise, tight
temperature coefficient, and high accuracy characteristics make
the ADR43x ideal for low noise applications such as cellular
base station applications.
Another example of an ADC for which the ADR431 is well
suited is the AD7701. Figure 40 shows the ADR431 used as the
precision reference for this converter. The AD7701 is a 16-bit
ADC with on-chip digital filtering intended for the measure-
ment of wide dynamic range and low frequency signals, such as
those representing chemical, physical, or biological processes. It
contains a charge-balancing (sigma-delta) ADC, a calibration
microcontroller with on-chip static RAM, a clock oscillator, and
a serial communications port.
SERIAL CLOCK
READ (TRANSMIT)
DATA READY
+5V
A
NALOG
SUPPLY
SERIAL CLOCK
RANGES
SELECT
CALIBRATE
ANALOG
INPUT
ANALOG
GROUND
–5V
ANALOG
SUPPLY
DVDD
SLEEP
MODE
DRDY
CS
SCLK
SDATA
CLKIN
CLKOUT
SC1
SC2
DGND
DVSS
AVSS
AGND
AIN
CAL
BP/UP
VREF
AVDD
VIN
VOUT
GND
ADR431
AD7701
0.1µF
0.1µF
0.1µF
0.1µF
10µF
0.1µF
10µF
0.1µF
04500-0-013
2
6
4
Figure 40. Voltage Reference for the AD7701 16-Bit ADC
PRECISION BOOSTED OUTPUT REGULATOR
A precision voltage output with boosted current capability can
be realized with the circuit shown in Figure 41. In this circuit,
U2 forces VO to be equal to VREF by regulating the turn-on of
N1. Therefore, the load current is furnished by VIN. In this
configuration, a 50 mA load is achievable at VIN of 5 V.
Moderate heat is generated on the MOSFET, and higher current
can be achieved with a replacement of the larger device. In
addition, for a heavy capacitive load with step input, a buffer
may be added at the output to enhance the transient response.
V–
V+
+
–
04500-0-014
V
IN
N1
V
IN
V
OUT
TRIM
GND
5V
U2
2N7002
AD8601
U1
ADR431
V
O
R
L
25Ω
2
6
5
4
Figure 41. Precision Boosted Output Regulator
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 20 of 24
OUTLINE DIMENSIONS
0.80
0.60
0.40
8°
0°
4
85
4.90
BSC
PIN 1
0.65 BSC
3.00
BSC
SEATING
PLANE
0.15
0.00
0.38
0.22
1.10 MAX
3.00
BSC
COPLANARITY
0.10
0.23
0.08
COMPLIANT TO JEDEC STANDARDS MO-187AA
Figure 42. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-012-A A
060506-A
0.25 (0.0098)
0.17 (0.0067)
1.27 (0.0500)
0.40 (0.0157)
0.50 (0.0196)
0.25 (0.0099) 45°
8°
0°
1.75 (0.0688)
1.35 (0.0532)
SEATING
PLANE
0.25 (0.0098)
0.10 (0.0040)
4
1
85
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
1.27 (0.0500)
BSC
6.20 (0.2440)
5.80 (0.2284)
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
Figure 43. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 21 of 24
ORDERING GUIDE
Initial
Accuracy, ±
Model
Output
Voltage (V) (mV) (%)
Temperature
Coefficient
Package
(ppm/°C)
Package
Description
Ordering
Quantity Branding
Temperature
Range
Package
Option
ADR430AR 2.048 3 0.15 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR430AR-REEL7 2.048 3 0.15 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR430ARZ12.048 3 0.15 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR430ARZ-REEL712.048 3 0.15 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR430ARM 2.048 3 0.15 10 8-Lead MSOP 50 RHA –40°C to +125°C RM-8
ADR430ARM-REEL7 2.048 3 0.15 10 8-Lead MSOP 1,000 RHA –40°C to +125°C RM-8
ADR430ARMZ12.048 3 0.15 10 8-Lead MSOP 50 R10 –40°C to +125°C RM-8
ADR430ARMZ-REEL712.048 3 0.15 10 8-Lead MSOP 1,000 R10 –40°C to +125°C RM-8
ADR430BR 2.048 1 0.05 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR430BR-REEL7 2.048 1 0.05 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR430BRZ12.048 1 0.05 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR430BRZ-REEL712.048 1 0.05 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR431AR 2.500 3 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR431AR-REEL7 2.500 3 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR431ARZ12.500 3 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR431ARZ-REEL712.500 3 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR431ARM 2.500 3 0.12 10 8-Lead MSOP 50 RJA –40°C to +125°C RM-8
ADR431ARM-REEL7 2.500 3 0.12 10 8-Lead MSOP 1,000 RJA –40°C to +125°C RM-8
ADR431ARMZ12.500 3 0.12 10 8-Lead MSOP 50 R12 –40°C to +125°C RM-8
ADR431ARMZ-REEL712.500 3 0.12 10 8-Lead MSOP 1,000 R12 –40°C to +125°C RM-8
ADR431BR 2.500 1 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR431BR-REEL7 2.500 1 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR431BRZ12.500 1 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR431BRZ-REEL712.500 1 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR433AR 3.000 4 0.13 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR433AR-REEL7 3.000 4 0.13 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR433ARZ13.000 4 0.13 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR433ARZ-REEL713.000 4 0.13 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR433ARM 3.000 4 0.13 10 8-Lead MSOP 50 RKA –40°C to +125°C RM-8
ADR433ARM-REEL7 3.000 4 0.13 10 8-Lead MSOP 1,000 RKA –40°C to +125°C RM-8
ADR433ARMZ13.000 4 0.13 10 8-Lead MSOP 50 R14 –40°C to +125°C RM-8
ADR433ARMZ-REEL713.000 4 0.13 10 8-Lead MSOP 1,000 R14 –40°C to +125°C RM-8
ADR433BR 3.000 1.5 0.05 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR433BR-REEL7 3.000 1.5 0.05 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR433BRZ13.000 1.5 0.05 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR433BRZ-REEL713.000 1.5 0.05 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR434AR 4.096 5 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR434AR-REEL7 4.096 5 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR434ARZ14.096 5 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR434ARZ-REEL714.096 5 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR434ARM 4.096 5 0.12 10 8-Lead MSOP 50 RLA –40°C to +125°C RM-8
ADR434ARM-REEL7 4.096 5 0.12 10 8-Lead MSOP 1,000 RLA –40°C to +125°C RM-8
ADR434ARMZ14.096 5 0.12 10 8-Lead MSOP 50 R16 –40°C to +125°C RM-8
ADR434ARMZ-REEL714.096 5 0.12 10 8-Lead MSOP 1,000 R16 –40°C to +125°C RM-8
ADR434BR 4.096 1.5 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR434BR-REEL7 4.096 1.5 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR434BRZ14.096 1.5 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR434BRZ-REEL714.096 1.5 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 22 of 24
Initial
Accuracy, ±
Model
Output
Voltage (V) (mV) (%)
Temperature
Coefficient
Package
(ppm/°C)
Package
Description
Ordering
Quantity Branding
Package
Option
Temperature
Range
ADR435AR 5.000 6 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR435AR-REEL7 5.000 6 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR435ARZ15.000 6 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR435ARZ-REEL715.000 6 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR435ARM 5.000 6 0.12 10 8-Lead MSOP 50 RMA –40°C to +125°C RM-8
ADR435ARM-REEL7 5.000 6 0.12 10 8-Lead MSOP 1,000 RMA –40°C to +125°C RM-8
ADR435ARMZ15.000 6 0.12 10 8-Lead MSOP 50 R18 –40°C to +125°C RM-8
ADR435ARMZ-REEL715.000 6 0.12 10 8-Lead MSOP 1,000 R18 –40°C to +125°C RM-8
ADR435BR 5.000 2 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR435BR-REEL7 5.000 2 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR435BRZ15.000 2 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR435BRZ-REEL715.000 2 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR439AR 4.500 5.5 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR439AR-REEL7 4.500 5.5 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR439ARZ14.500 5.5 0.12 10 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR439ARZ-REEL714.500 5.5 0.12 10 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR439ARM 4.500 5.5 0.12 10 8-Lead MSOP 50 RNA –40°C to +125°C RM-8
ADR439ARM-REEL7 4.500 5.5 0.12 10 8-Lead MSOP 1,000 RNA –40°C to +125°C RM-8
ADR439ARMZ14.500 5.5 0.12 10 8-Lead MSOP 50 R1C –40°C to +125°C RM-8
ADR439ARMZ-REEL714.500 5.5 0.12 10 8-Lead MSOP 1,000 R1C –40°C to +125°C RM-8
ADR439BR 4.500 2 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR439BR-REEL7 4.500 2 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
ADR439BRZ14.500 2 0.04 3 8-Lead SOIC_N 98 –40°C to +125°C R-8
ADR439BRZ-REEL714.500 2 0.04 3 8-Lead SOIC_N 1,000 –40°C to +125°C R-8
1 Z = Pb-free part.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 23 of 24
NOTES
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
Rev. C | Page 24 of 24
NOTES
©2006 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D04500-0-8/06(C)
