May 2011
FDPF085N10A N-Channel PowerTrench® MOSFET
©2011 Fairchild Semiconductor Corporation
FDPF085N10A Rev. A1
www.fairchildsemi.com1
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 100 V
VGSS Gate to Source Voltage ±20 V
IDDrain Current - Continuous (TC = 25oC) 40 A
- Continuous (TC = 100oC) 28
IDM Drain Current - Pulsed (Note 1) 160 A
EAS Single Pulsed Avalanche Energy (Note 2) 269 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PDPower Dissipation (TC = 25oC) 33.3 W
- Derate above 25oC 0.22 W/oC
TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 oC
Symbol Parameter Ratings Units
RqJC Thermal Resistance, Junction to Case 4.5 oC/W
RqJA Thermal Resistance, Junction to Ambient 62.5
FDPF085N10A
N-Channel PowerTrench® MOSFET
100V, 40A, 8.5mW
Features
• RDS(on) = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Server/Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
TO-220F
(Retractable)
G D S
D
G
S
FDPF085N10A N-Channel PowerTrench® MOSFET
FDPF085N10A Rev. A1 www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDPF085N10A FDPF085N10A TO-220F - - 50
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 250mA, VGS = 0V 100 - - V
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient ID = 250mA, Referenced to 25oC - 0.07 - V/oC
IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 mA
VDS = 80V, TC = 150oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250mA 2.0 - 4.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 40A - 6.5 8.5 mW
gFS Forward Transconductance VDS = 10V, ID = 40A (Note 4) - 76 - S
Ciss Input Capacitance VDS = 50V, VGS = 0V
f = 1MHz
- 2025 2695 pF
Coss Output Capacitance - 468 620 pF
Crss Reverse Transfer Capacitance - 20 - pF
Coss(er) Engry Related Output Capacitance VDS = 50V, VGS = 0V - 752 - pF
Qg(tot) Total Gate Charge at 10V
VGS = 10V, VDS = 50V
ID = 96A
(Note 4, 5)
- 31 40 nC
Qgs Gate to Source Gate Charge - 9.7 - nC
Qgs2 Gate Charge Threshoid to Plateau - 5.0 - nC
Qgd Gate to Drain “Miller” Charge - 7.5 - nC
ESR Equivalent Series Resistance (G-S) Drain Open, f = 1MHz - 0.97 - W
td(on) Turn-On Delay Time
VDD = 50V, ID = 96A
VGS = 10V, RGEN = 4.7W
(Note 4, 5)
- 18 46 ns
trTurn-On Rise Time - 22 54 ns
td(off) Turn-Off Delay Time - 29 68 ns
tfTurn-Off Fall Time - 8 26 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 40 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 160 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 40A - - 1.3 V
trr Reverse Recovery Time VDD = 50V,VGS = 0V, ISD = 96A
dIF/dt = 100A/ms (Note 4)
- 59 - ns
Qrr Reverse Recovery Charge - 80 - nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3 mH, IAS = 13.4 A, RG = 25W, Starting TJ = 25°C
3. ISD £ 40 A, di/dt £ 200A/ms, VDD £ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width £ 300ms, Dual Cycle £ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDPF085N10A N-Channel PowerTrench® MOSFET
FDPF085N10A Rev. A1 www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 5
5
10
100
500
*Notes:
1. 250ms Pulse Test
2. TC = 25oC
ID, Drain Current[A]
VDS, Drain-Source Voltage[V]
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
234567
1
10
100
300
-55oC
175oC
*Notes:
1. VDS = 10V
2. 250ms Pulse Test
25oC
ID, Drain Current[A]
VGS, Gate-Source Voltage[V]
0 100 200 300 400
4
8
12
16
18
*Note: TC = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [mW],
Drain-Source On-Resistance
ID, Drain Current [A]
0.3 0.6 0.9 1.2 1.5
1
10
100
500
*Notes:
1. VGS = 0V
2. 250ms Pulse Test
175oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 100
10
100
1000
10000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 7 14 21 28 35
0
2
4
6
8
10
*Note: ID = 96A
VDS = 20V
VDS = 50V
VDS = 80V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
FDPF085N10A N-Channel PowerTrench® MOSFET
FDPF085N10A Rev. A1 www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability
-80 -40 0 40 80 120 160 200
0.92
0.96
1.00
1.04
1.08
1.12
*Notes:
1. VGS = 0V
2. ID = 250mA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-80 -40 0 40 80 120 160 200
0.5
1.0
1.5
2.0
2.5
*Notes:
1. VGS = 10V
2. ID = 96A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
0.1 1 10 100 200
0.01
0.1
1
10
100
500
10ms
100ms
1ms
100ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
DC
25 50 75 100 125 150 175
0
9
18
27
36
45
RqJC = 4.5oC/W
VGS= 10V
ID, Drain Current [A]
TC, Case Temperature [oC]
0 20 40 60 80 100
0.0
0.5
1.0
1.5
2.0
2.5
EOSS, [mJ]
V
DS
, Drain to Source Voltage [V]
0.01 0.1 1 10 100 300
1
10
30 If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
STARTING TJ = 25oC
STARTING TJ = 150oC
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
FDPF085N10A N-Channel PowerTrench® MOSFET
FDPF085N10A Rev. A1 www.fairchildsemi.com5
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 1 10 100
0.01
0.1
1
6
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZqJC(t) = 4.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZqJC(t)
0.5
Single pulse
Thermal Response [ZqJC]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FDPF085N10A N-Channel PowerTrench® MOSFET
FDPF085N10A Rev. A1 www.fairchildsemi.com
6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDPF085N10A N-Channel PowerTrench® MOSFET
FDPF085N10A Rev. A1 www.fairchildsemi.com
7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FDPF085N10A N-Channel PowerTrench® MOSFET
FDPF085N10A Rev. A1 www.fairchildsemi.com
8
Package Dimensions
Dimensions in Millimeters
TO-220F (Retractable)
* Front/Back Side Isolation Voltage : AC 2500V
FDPF085N10A N-Channel PowerTrench® MOSFET
FDPF085N10A Rev. A1 www.fairchildsemi.com
9
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
Auto-SPM™
AX-CAP™*
BitSiC®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
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Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
The Power Franchise®
The Right Technology for Your Success™
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
mSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I54
