TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 1 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
QFN 5x5 mm 32L
Pad Configuration
Pad No.
Symbol
1-2, 4, 6, 8-9, 16-17,19, 21, 23-25, 32
GND
3, 7, 10-15, 18, 22, 27-31
NC
5
RF IN
20
RF OUT,
DRAIN
26
GATE
Applications
Commercial and military radar
Communications
Electronic Warfare
General Description
TriQuint’s TGA2237-SM is a wideband distributed
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2237-SM operates from 0.03 –
2.5GHz and provides greater than 10W of saturated
output power with greater than 13dB of large signal gain
and greater than 50% power-added efficiency.
The TGA2237-SM is available in a low-cost, surface
mount 32 lead 5x5 AIN QFN. It is ideally suited to
support both radar and communication applications
across defense and commercial markets as well as
electronic warfare. The TGA2237-SM is fully matched to
50Ω at both RF ports allowing for simple system
integration. DC blocks are required on both RF ports and
the drain voltage must be injected through an off chip
bias-tee on the RF output port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Ordering Information
Part
ECCN
Description
TGA2237-SM
EAR99
0.03 – 2.5GHz 10W
GaN Power Amplifier
Product Features
Frequency Range: 0.03 – 2.5GHz
PSAT: >40dBm at PIN = 27dBm
P1dB: >33dBm
PAE: >50%
Large Signal Gain: >13dB
Small Signal Gain: >19dB
Input Return Loss: >10dB
Output Return Loss: >12dB
Bias: VD = 32V, IDQ = 360mA, VG = -2.6V Typical
Wideband Flat Power
Package Dimensions: 5.0 x 5.0 x 1.45 mm
Functional Block Diagram
9 10 11 12 13 14 15 16
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
32 31 30 29 28 27 26 25
RF IN RF OUT
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 2 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
40V
Gate Voltage Range (VG)
-8 to 0V
Drain Current (ID)
1.2A
Gate Current (IG)
-2.4 to 8.4mA
Power Dissipation (PDISS), 85°C
19W
Input Power (PIN), CW, 50 Ω, 85°C
33dBm(*)
Input Power (PIN), CW, VSWR 3:1,
VD = 32V, 85°C
33dBm(*)
Max VSWR, CW, PIN = 27dBm,
VD = 32V, 85°C (Load)
10:1
Channel Temperature (TCH)
275°C
Mounting Temperature
(30 Seconds)
320°C
Storage Temperature
-55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
32V
Drain Current (IDQ)
360mA
Gate Voltage (VG)
-2.6V (Typ.)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
(*) Operational input power must be limited to 26dBm when
operating below 0.6GHz to prevent excessive forward gate
current.
Electrical Specifications
Test conditions unless otherwise noted: 250C, VD = 32V, IDQ = 360mA, VG = -2.6V Typical
Parameter
Min
Typical
Max
Units
Operational Frequency Range
0.03
2.5
GHz
Small Signal Gain
> 19
dB
Input Return Loss
> 10
dB
Output Return Loss
> 12
dB
Output Power (Pin = 27dBm)
> 40
dBm
Power Added Efficiency (Pin = 27dBm)
> 50
%
Power @ 1dB Compression (P1dB)
> 33
dBm
IM3 @ POUT/tone = 30dBm
-25
dBc
IM5 @ POUT/tone = 30dBm
-33
dBc
Small Signal Gain Temperature Coefficient
-0.03
dB/°C
Output Power Temperature Coefficient
-0.002
dBm/°C
Recommended Operating Voltage:
20
32
V
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 3 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
Tbase = 85°C, VD = 32V
IDQ = 360mA, ID_Drive = 630mA
PIN = 27dBm, POUT = 40dBm, PDISS = 10W
10.2
ºC/W
Channel Temperature (TCH) (Under RF drive)
187
°C
Median Lifetime (TM)
4.12 x 10^7
Hrs
Notes:
1. Thermal resistance measured to back of package.
Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX
1E+04
1E+05
1E+06
1E+07
1E+08
1E+09
1E+10
1E+11
1E+12
1E+13
1E+14
1E+15
1E+16
1E+17
1E+18
25 50 75 100 125 150 175 200 225 250 275
Median Lifetime, TM(Hours)
Channel Temperature, TCH (C)
Median Lifetime vs. Channel Temperature
FET13
8.0
8.5
9.0
9.5
10.0
10.5
11.0
3 4 5 6 7 8 9 10 11 12 13
RJC (C/W)
PDISS (W)
Thermal Resistance vs. PDISS
TBASE = +85°C
CW
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
0 0.5 1 1.5 2 2.5
Power Dissipation (W)
Frequency (GHz)
PDISS vs. Frequency vs. TBASE
-40C
+25C
+85C
PIN = 27dBm
VD= 32V, IDQ = 360mA
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 4 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)
Typical Performance: Small Signal
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
S11 (dB)
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
-40C
+25C
+85C
VD= 32 V, IDQ = 360mA
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
S22 (dB)
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
-40C
+25C
+85C
VD= 32 V, IDQ = 360mA
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
S11 (dB)
Frequency (GHz)
Input Return Loss vs. Freq. vs. VD
32V
30V
28V
25V
Temp. = +25°C
IDQ = 360mA
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
S22(dB)
Frequency (GHz)
Output Return Loss vs. Freq. vs. VD
32V
30V
28V
25V
Temp. = +25°C
IDQ = 360mA
10
12
14
16
18
20
22
24
26
28
0 0.5 1 1.5 2 2.5 3 3.5 4
S21 (dB)
Frequency (GHz)
Gain vs. Frequency vs. Temperature
-40C
+25C
+85C
VD= 32 V, IDQ = 360mA
10
12
14
16
18
20
22
24
26
28
0 0.5 1 1.5 2 2.5 3 3.5 4
S21 (dB)
Frequency (GHz)
Gain vs. Frequency vs. VD
25V
28V
30V
32V
Temp. = +25°C
IDQ = 360mA
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 5 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance: Large Signal (CW)
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)
30
32
34
36
38
40
42
0 0.5 1 1.5 2 2.5 3 3.5 4
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. VD
Vd=20V
Vd=25V
Vd=28V
Vd=30V
Vd=32V
PIN = 27dBm
Temp. = +25°C
IDQ = 360mA
35
40
45
50
55
60
65
70
0 0.5 1 1.5 2 2.5 3 3.5 4
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. VD
Vd=20V
Vd=25V
Vd=28V
Vd=30V
Vd=32V
PIN = 27dBm
Temp. = +25°C
IDQ = 360mA
35
36
37
38
39
40
41
42
0 0.5 1 1.5 2 2.5 3 3.5 4
POUT (dBm)
Frequency (GHz)
Output Power vs. Freq vs. Input Power
22dBm
24dBm
26dBm
27dBm
Temp. = +25°C
VD= 32V, IDQ = 360mA
35
36
37
38
39
40
41
42
0 0.5 1 1.5 2 2.5 3 3.5 4
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 27dBmVD= 32V, IDQ = 360mA
35
40
45
50
55
60
65
70
0 0.5 1 1.5 2 2.5 3 3.5 4
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. Temperature
-40C
+25C
+85C
PIN = 27dBm
VD= 32V, IDQ = 360mA
35
40
45
50
55
60
65
70
0 0.5 1 1.5 2 2.5 3 3.5 4
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. Input Power
22dBm
24dBm
26dBm
27dBm
Temp. = +25°C
VD= 32V, IDQ = 360mA
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 6 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance: Large Signal (CW)
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)
35
36
37
38
39
40
41
42
0 0.5 1 1.5 2 2.5 3 3.5 4
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. IDQ
120mA
240mA
360mA
PIN = 27dBm
Temp. = +25°C
VD= 32V
35
40
45
50
55
60
65
70
0 0.5 1 1.5 2 2.5 3 3.5 4
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. IDQ
120mA
240mA
360mA
PIN = 27dBm
Temp. = +25°C
VD= 32V
16
19
22
25
28
31
34
37
40
43
0 3 6 9 12 15 18 21 24 27
POUT (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Freq.
0.1Ghz
1.0GHz
1.6GHz
2.4GHz
Temp. = +25°C
VD= 32V, IDQ = 360mA
0
10
20
30
40
50
60
70
0 3 6 9 12 15 18 21 24 27
PAE (%)
Input Power (dBm)
PAE vs. Input Power vs. Freq.
2.4GHz
1.6GHz
1.0GHz
0.1GHz
Temp. = +25°C
VD= 32V, IDQ = 360mA
10
12
14
16
18
20
22
24
26
0 3 6 9 12 15 18 21 24 27
Gain (dB)
Input Power (dBm)
Power Gain vs. Input Power vs. Freq.
0.1GHz
1.0GHz
1.6GHz
2.4GHz
Temp. = +25°C
VD= 32V, IDQ = 360mA
12
14
16
18
20
22
24
0 3 6 9 12 15 18 21 24 27
Gain (dB)
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
-40C
+25C
+85C
Freq. = 1.6GHz
VD= 32V, IDQ = 360mA
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 7 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance: Large Signal (CW)
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)
100
200
300
400
500
600
700
0 3 6 9 12 15 18 21 24 27
Drain Current (mA)
Input Power (dBm)
Drain Current vs. Input Power vs. Freq.
2.4GHz
1.6GHz
1.0GHz
0.1Ghz
Temp. = +25°C
VD= 32V, IDQ = 360mA
100
200
300
400
500
600
700
0 0.5 1 1.5 2 2.5 3 3.5 4
Drain Current (mA)
Frequency (GHz)
Drain Current vs. Frequency vs. IDQ
32V120mA
32V240mA
32V360mA
PIN = 27dBm
Temp. = +25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0 0.5 1 1.5 2 2.5 3 3.5 4
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Frequency vs. IDQ
32V120mA
32V240mA
32V360mA
PIN = 27dBm
Temp. = +25°C
100
200
300
400
500
600
700
0 0.5 1 1.5 2 2.5 3 3.5 4
Drain Current (mA)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 27dBm
VD= 32V, IDQ = 360mA
-2
0
2
4
6
8
10
12
0 0.5 1 1.5 2 2.5 3 3.5 4
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 27dBm
VD= 32V, IDQ = 360mA
-1
1
3
5
7
9
11
19 20 21 22 23 24 25 26 27 28
Gate Current (mA)
Input Power (dBm)
Gate Current vs. Input Power vs. Freq.
0.05GHz 0.1GHz 0.2GHz 0.4GHz
0.6GHz 0.8GHz 1.0GHz 1.6GHz
Temp. = +25°C
VD= 32V, IDQ = 360mA
PIN is limited to 26dBm for frequency
below 0.6GHz due to high gate
current.
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 8 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance: Linearity
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)
-80
-70
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
IM3 (dBc)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. IDQ
VD= 32V, 2.0GHz, 1MHz Tone Spacing
Temp. = +25°C
IDQ = 120 mA
IDQ = 240 mA
IDQ = 360 mA
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
510 15 20 25 30 35 40
IM5 (dBc)
Output Power per Tone (dBm)
IM5 vs. Output Power vs. IDQ
VD= 32V, 2.0GHz, 1MHz Tone Spacing
Temp. = +25°C
IDQ = 120 mA
IDQ = 240 mA
IDQ = 360 mA
-80
-70
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
IM3 (dBc)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Temperature
VD= 32V, IDQ = 360mA, 2.0GHz, 1MHz Tone Spacing
-40°C
+25°C
+85°C
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
510 15 20 25 30 35 40
IM5 (dBc)
Output Power per Tone (dBm)
IM5 vs. Output Power vs. Temperature
VD= 32V, IDQ = 360mA, 2.0GHz, 1MHz Tone Spacing
-40°C
+25°C
+85°C
-80
-70
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
IM3 (dBc)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Frequency
VD= 32V, IDQ = 360mA, 1MHz Tone Spacing
Temp. = +25°C
2.5GHz
2.0GHz
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
510 15 20 25 30 35 40
IM5 (dBc)
Output Power per Tone (dBm)
IM5 vs. Output Power vs. Frequency
VD= 32V, IDQ = 360mA, 1MHz Tone Spacing
Temp. = +25°C
2.5GHz
2.0GHz
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 9 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance: Linearity
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
2f0Output Power (dBc)
Output Power per Tone (dBm)
2ND Harmonic vs. Output Power vs. Temp.
Freq. = 2.0GHz
+85°C
+25°C
-40°C
VD= 32V, IDQ = 360mA
-70
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
3f0Output Power (dBc)
Output Power per Tone (dBm)
3RD Harmonic vs. Output Power vs. Temp.
Freq. = 2.0GHz
+85°C
+25°C
-40°C
VD= 32V, IDQ = 360mA
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
2f0Output Power (dBc)
Output Power per Tone (dBm)
2ND Harmonic vs. Output Power vs. VD/ID.
Freq. = 2.0GHzTemp. = +25°C
32V240mA
32V120mA
32V360mA
-70
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
3f0Output Power (dBc)
Output Power per Tone (dBm)
3RD Harmonic vs. Output Power vs. VD/ID.
Freq. = 2.0GHz
Temp. = +25°C
32V240mA
32V120mA
32V360mA
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
2f0Output Power (dBc)
Output Power per Tone (dBm)
2ND Harmonic vs. Output Power vs. Freq.
VD= 32V, IDQ = 360mATemp. = +25°C
2.0GHz
1.5GHz
1.0GHz
2.5GHz
-70
-60
-50
-40
-30
-20
-10
0
510 15 20 25 30 35 40
3f0Output Power (dBc)
Output Power per Tone (dBm)
3RD Harmonic vs. Output Power vs. Freq.
VD= 32V, IDQ = 360mATemp. = +25°C
2.0GHz
1.5GHz
1.0GHz
2.5GHz
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 10 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance: Large Signal (CW), On-board vs. External Coaxial Bias-T
The plots below reflect performance measured between external bias tee and on-board bias tee
(See application circuit on pages 11 and 13)
30
35
40
45
50
55
60
65
70
75
0 0.5 1 1.5 2 2.5 3 3.5 4
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. Input Power
External Bias-T
On-Board Bias-T
Temp. = +25°C
VD= 30V, IDQ = 360mA
PIN = 27dBm
35
36
37
38
39
40
41
42
0 0.5 1 1.5 2 2.5 3 3.5 4
POUT (dBm)
Frequency (GHz)
Output Power vs. Freq vs. Input Power
External Bias-T
On-Board Bias-T
Temp. = +25°C VD= 30V, IDQ = 360mA
PIN = 27dBm
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 11 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Notes: 1. Coaxial input DC block (C3) is used for input port (RF In.)
2. External wide bandwidth Bias-Tee is used for output port (RF Out). VD is applied through the output Bias-
Tee.
(*) PIN is limited to 26dBm for frequency < 0.6GHz due to high gate current.
Application Circuit (Coaxial input DC block and coaxial output bias tee)
Bias-up Procedure
1. Set ID limit to 700mA, IG limit to 7mA
2. Set VG to -5.0V
3. Set VD +32V
4. Adjust VG more positive until IDQ = 360mA (VG ~ -2.6V
Typical)
5. Apply RF signal *
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Turn off VD supply
5. Turn off VG supply
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 12 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Assembly Drawing (Coaxial input DC block and coaxial output bias tee)
Bill of Materials
Reference Design
Value
Description
Manufacturer
Part Number
C1
1000pF
Cap, 0402, 100V, 10%, X7R
Various
C2
1uF
Cap, 1206, 50V, 10%, X7R
Various
C3
DC Block
Various
R1 – R2
10Ω
Res, 0402
Various
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 13 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Notes: 1. Performance of the DUT with surface mount DC blocks and bias tee components may be degraded
relative to the coaxial option. These components should be optimized for the desired operational
bandwidth.
Application Circuit (Option with board-level DC blocks and output bias tee )
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 14 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Evaluation Board Layout with On-Board DC Blocks and Output Bias-T Option
Bill of Materials For On-Board Bias-Tee
Reference Design
Value
Description
Manufacturer
Part Number
C1, C4, C5, C7
1000pF
Cap, 0402, 100V, 10%, X7R
Various
C2
1uF
Cap, 1206, 50V, 10%, X7R
Various
C6
0.01uF
Cap, 1206, 100V, 10%, X7R
Various
L1
330nH
Ind, 1206, 100V, 10%, X7R
Various
R1 – R4
10Ω
Res, 0402
Various
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 15 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Pin Layout
Pin Layout
Pin Description
Pin No.
Symbol
Description
1-2, 4, 6, 8-9, 16-17, 19, 21, 23-25, 32
GND
Connected to ground paddle (pin 33); must be grounded
on PCB
3, 7, 10-15, 18, 22, 27-31
NC
No connection
5
RF IN
Input; matched to 50 Ω.
20
RF OUT/
DRAIN
Output; matched to 50 Ω.
26
GATE
GATE voltage; bias network is required; see recommended
Application Information on page 11
33
GND
Ground Paddle. Multiple vias should be employed to
minimize inductance and thermal resistance.
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 16 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Mechanical Information
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Ceramic
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2237: Part number
YY: Part Assembly year
WW: Part Assembly week
MXXX: Batch ID
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 17 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Recommended Soldering Temperature Profile
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
- 18 of 18 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@triquint.com Fax: +1.972.994.8504
For technical questions and application information: Email: info-products@triquint.com
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive Device
ESD Rating: TBD
Value: TBD
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating
Level TBD at 260°C convection reflow
The part is rated Moisture Sensitivity Level TBD at TBD°C
per JEDEC standard IPC/JEDEC J-STD-020.
Solderability
Compatible with the latest version of J-STD-020 Lead
free solder, 260°C.
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
ECCN
US Department of Commerce: EAR99
