MDD 26 IFRMS = 2x 60 A IFAVM = 2x 36 A VRRM = 800-1800 V Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type MDD 26-08N1 B MDD 26-12N1 B MDD 26-14N1 B MDD 26-16N1 B MDD 26-18N1 B IFSM TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Maximum Ratings 60 A 36 A Md 50/60 Hz, RMS IISOL 1 mA t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine t = 1 min t=1s Weight Mounting torque (M5) Terminal connection torque (M5) Typical including screws Symbol IR Test Conditions TVJ = TVJM; VR = VRRM VF IF = 80 A; TVJ = 25C VT0 rT 650 760 580 630 A A A A 2100 2400 1700 1900 2 As A2s A2s A2s -40...+150 150 -40...+125 C C C 3000 3600 V~ V~ 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 90 g Characteristic Values 10 mA 1.38 V For power-loss calculations only TVJ = TVJM 0.8 6.1 V mW QS IRM TVJ = 125C; IF = 25 A, -di/dt = 0.6 A/ms 50 6 mC A RthJC per diode; DC current per module per diode; DC current per module 1.0 0.5 1.2 0.6 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 RthJK dS dA a Features International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms TVJ TVJM Tstg VISOL 3 TO-240 AA 1 Test Conditions TVJ = TVJM TC = 100C; 180 sine oi dt 2 2 Symbol IFRMS IFAVM 2 1 other values see Fig. 6/7 Creepage distance on surface Strike distance through air Maximum allowable acceleration Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-3 MDD 26 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 oi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load (c) 2000 IXYS All rights reserved 2-3 MDD 26 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 1.00 1.02 1.04 1.07 1.10 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.01 0.03 0.96 0.0012 0.095 0.455 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 1.20 1.22 1.24 1.27 1.30 Constants for ZthJK calculation: i 1 2 3 4 (c) 2000 IXYS All rights reserved Rthi (K/W) ti (s) 0.01 0.03 0.96 0.2 0.0012 0.095 0.455 0.495 3-3