Parameter Max. Units
VDS Drain- Source Voltage 30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 7.3
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 5.8 A
IDM Pulsed Drain Current 58
PD @TC = 25°C Power Dissipation 2.5
PD @TC = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V
EAS Single Pulse Avalanche Energy70 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
HEXFET® Power MOSFET
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
VDSS = 30V
RDS(on) = 0.030 Ω
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
IRF7201
Description
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
08/15/03
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030 VGS = 10V, ID = 7.3A
––– ––– 0.050 VGS = 4.5V, ID = 3.7A
VGS(th) Gate Threshold Voltage 1.0 ––– – –– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 5.8 ––– ––– S VDS = 15V, ID = 2.3A
––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– –– – 100 VGS = 20V
QgTotal Gate Charge –– – 19 2 8 ID = 4.6A
Qgs Gate-to-Source Charge ––– 2. 3 3.5 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 6. 3 9 .5 VGS = 10V, See Fig. 10
td(on) Turn-On Delay Time ––– 7 .0 – –– VDD = 15V
trRise Time ––– 35 ––– ID = 4.6A
td(off) Turn-Off Delay Time ––– 21 ––– RG = 6.2Ω
tfFall Time ––– 19 ––– RD = 3.2Ω,
Ciss Input Capacitance ––– 550 ––– VGS = 0V
Coss Output Capacitance ––– 260 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 10 0 ––– ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 4.6A, VGS = 0V
trr Reverse Recovery Time ––– 48 73 ns TJ = 25°C, IF = 4.6A
Qrr Reverse RecoveryCharge ––– 73 110 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
58
2.5
A
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11) ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD = 15V, starting TJ = 25°C, L = 6.6mH
RG = 25Ω, I AS = 4.6A. (See Figure 8) Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
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Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
10
100
0.1 1 10
20µs PULSE W IDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltag e (V)
3.0 V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-t o-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Sour ce C urrent (A)
20µs PULSE W IDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5
T = 25°C
T = 150°C
J
J
GS
V , Ga te -to-Source Vo lta ge (V )
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltag e (V)
I , Reve rs e Drain Current (A)
SD
SD
A
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Fig 5. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-S ource On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 4.6A
D
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
0
40
80
120
160
200
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 2.1A
3.7A
BOTTOM 4.6A
D
Fig 6. On-Resistance Vs. Drain Current
Fig 7. On-Resistance Vs. Gate Voltage
0.02
0.03
0.04
0.05
2 4 6 8 10 12 14 16
A
R , Drain-to-Source On Resistance
DS(on)
(Ω)
GS
V , Gate-to-Source Voltage (V)
I = 7.3A
D
0.00
0.05
0.10
0.15
0.20
0 10203040
A
I , Drain Current (A)
D
(Ω)
V = 10V
GS
V = 4.5V
GS
DS(on)
R , Drain-to-S o urce On Resistance
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Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0
200
400
600
800
1000
1 10 100
C , Ca pacitance (pF)
DS
V , Drain-to-Source Vo ltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
os s d s gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V )
GS
A
V = 24V
V = 15V
DS
DS
I = 4.6A
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pul s e Durati on ( sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8 X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3 X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DI MENSIONING AND TOLERANCING PER A NSI Y14. 5M-1982.
2. CONTR OLLING DIMENSI ON : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT I NCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
θ
SO-8 Part Marking
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33 0.0 0
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA -541.
F EE D DI R E CT I ON
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENS ION : MILLI ME T ER.
2 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541 .
SO-8 Tape and Reel
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/03
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