To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE FS30KMH-2 OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 f 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 E 0.75 0.15 w 2.6 0.2 1 2 3 2.5V DRIVE VDSS ................................................................................ 100V rDS (ON) (MAX) .............................................................. 93m ID ......................................................................................... 30A Integrated Fast Recovery Diode (TYP.) ............. 95ns Viso ................................................................................ 2000V 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value -- VGS = 0V VDS = 0V L = 100H Ratings Unit 100 10 V V 30 120 A A 30 A 30 120 A A 25 -55 ~ +150 W C -55 ~ +150 2000 C V 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, ID = 15A, VGS = 4V, RGEN = RGS = 50 IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = -100A/s Unit Min. Typ. Max. 100 -- -- -- -- 0.1 V A -- 0.6 -- 0.9 0.1 1.2 mA V -- 66 93 m -- -- 69 0.99 97 1.40 m V -- -- 31 2000 -- -- S pF -- -- 230 120 -- -- pF pF -- -- 33 135 -- -- ns ns -- 170 -- ns -- -- 170 1.0 -- 1.5 ns V -- -- -- 95 5.00 -- C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 DRAIN CURRENT ID (A) 150 100ms 1ms TC = 25C Single Pulse 100 10ms DC 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 2.5V 20 2V 10 PD = 25W 1.5V 2.0 TC = 25C Pulse Test 3V 30 1.0 20 4V TC = 25C Pulse Test 0 7 5 3 2 7 5 3 200 tw = 10ms 101 DRAIN-SOURCE VOLTAGE VDS (V) VGS = 5V 40 102 7 5 3 2 CASE TEMPERATURE TC (C) 50 0 MAXIMUM SAFE OPERATING AREA 3 2 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 VGS = 5V 16 2V 4V 3V 2.5V 12 PD = 25W 8 1.5V 4 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 200 ID = 50A 4.0 3.0 30A 2.0 1.0 0 10A 0 1.0 2.0 3.0 TC = 25C VDS = 10V Pulse Test 10 7 5 3 2 103 7 5 3 2 102 7 5 3 2 80 4V 40 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 20 104 120 TRANSFER CHARACTERISTICS (TYPICAL) 30 2 VGS = 2.5V DRAIN CURRENT ID (A) 40 0 160 0 5.0 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 4.0 TC = 25C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 50 CAPACITANCE Ciss, Coss, Crss (pF) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) TC = 25C Pulse Test 102 7 5 4 3 VDS = 10V Pulse Test 2 TC = 25C 101 7 5 4 3 75C 125C 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C f = 1MHZ VGS = 0V Ciss Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 TCh = 25C VDD = 50V VGS = 4V RGEN = RGS = 50 td(off) 2 tf 102 7 5 4 3 tr td(on) 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) 3.0 VDS = 20V 50V 80V 2.0 1.0 0 10 20 30 40 30 TC = 125C 20 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 -50 0 50 100 VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 75C 25C 10 0 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10-1 VGS = 0V Pulse Test 40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 50 Tch = 25C ID = 30A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 100 0.1 7 5 3 2 10-1 7 5 3 2 0.05 0.02 PDM 0.01 tw Single Pulse T D= tw T 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999