Switching and General Purpose Transistors 2N696 (siLicon) Ves =60V 2n697 (JAN 2N696 and 2N697 available) NPN silicon annular transistors designed for small- CASE 31 signal amplifier and general purpose switching appli- (TO-5) cations. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcER 40 Vde Collector-Base Voltage Vos 60 Vdc Emitter-Base Voltage Veep 5.0 Vdc Total Device Dissipation @ Ty = 25C Ph 0.6 Watt Derate above 25C 13.3 mw/C Total Device Dissipation @ To = 25C Py 2.0 Watts Derate above 25C 13.3 mW/C Operating and Storage Junction T yp Tot -65 to +200 C Temperature Range sts ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) [ Characteristic [ Symbol | Min | Max | Unit | OFF CHARACTERISTICS Collector miter Breakdown vonage BVorr to Vde Cc BE Collector-Base Breakdown Voltage BVapo Vde Ml, = 100 Adc, Ib = 0) 60 Emitter-Base Breakdown Voltage BV ERO Vde (Ip = 100 wAde, 1, = 0) 5.0 Collector Cutoff Current logo pAde Vop = 30 Vde, I, = 0) - 1.0 Wop = 30 Vde, ih =0, Ty = 150C) - 100 ON CHARACTERISTICS De Current Gain* hpp* - la = 150 mAdc, Vor = 10 Vdc) 2N696 20 60 2N697 40 120 Collector-Emitter Saturation Voltage* Von(sat) Vde (I, = 150 mAdc, I, = 15 mAdc) - 1.5 Base-Emitter Saturation Voltage * v * Vde (Ig = 150 mAdc, I, = 15 mAdc) BE(sat) - 1.3 DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product fp MHz Mle = 50 mAdc, Vor = 10 Vdc, f = 20 MHz) 2N696 40 - 2N697 50 - Output Capacitance Cop pF (Yop = 10 Vde, Is = 0) - 35 * Pulse Test: Pulse Length 12 ms, Duty Cycle 2.0%. 8-15