IXTH75N10L2 - LITTELFUSE

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 100 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 100 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 75 A

IDM TC= 25°C, Pulse Width Limited by TJM 225 A

IATC= 25°C 75 A

EAS 2.5 J

PDTC= 25°C 400 W

TJ -55 to +150 °C

TJM +150 °C

Tstg -55 to +150 °C

TL1.6mm (0.063in) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6.0 g

TO-268 4.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 100 V

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V

IGSS VGS = ±20V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V 5 μA

TJ = 125°C 50 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 21 mΩ

LinearL2TM Power

MOSFET w/extended

FBSOA

IXTH75N10L2

IXTT75N10L2

DS100200(9/09)

VDSS = 100V

ID25 = 75A

RDS(on) ≤≤

≤≤

≤ 21mΩΩ

ΩΩ

Ω

Advance Technical Information

N-Channel Enhancement Mode

Guaranteed FBSOA

Avalanche Rated

Features

zDesigned for Linear Operation

zInternational Standard Packages

zAvalanche Rated

zIntegrated Gate Resistor for Easy

Paralleling

zGuaranteed FBSOA at 75°C

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zSolid State Circuit Breakers

zSoft Start Controls

zLinear Amplifiers

zProgrammable Loads

zCurrent Regulators

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

TO-268 (IXTT)

G

SD (Tab)

S

G

D (Tab)

D

GO

O

S

w

RGi

OO

D

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH75N10L2

IXTT75N10L2

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 35 44 53 S

Ciss 8100 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 1280 pF

Crss 350 pF

RGi Integrated Gate Input Resistor 3.0 Ω

td(on) 23 ns

tr 14 ns

td(off) 68 ns

tf 15 ns

Qg(on) 215 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 36 nC

Qgd 80 nC

RthJC 0.31 °C/W

RthCS TO-247 0.21 °C/W

Safe Operating Area Specification

Characteristic Values

Symbol Test Conditions Min. Typ. Max.

SOA VDS = 80V, ID = 3A, TC = 75°C, Tp = 5s 240 W

Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 0Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

e

∅ P

TO-247 (IXTH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-268 (IXTT) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 75 A

ISM Repetitive, Pulse Width Limited by TJM 300 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr 180 ns

IRM 16.2 A

QRM 1.46 μC

IF = 37.5A, -di/dt = 100A/μs,

VR = 50V, VGS = 0V

IXTH75N10L2

IXTT75N10L2

Fi g . 1. Ou tpu t C har acter i st i cs @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

DS

- Volts

I

D

- Ampe res

V

GS

= 20V

14V

12V

10V

4

V

6

V

8

V

Fi g . 2. Exte n d ed Ou tpu t Ch ar acter i s ti cs @ T

J

= 25ºC

0

40

80

120

160

200

240

280

0 5 10 15 20 25

V

DS

- Volts

I

D

- Ampere s

V

GS

= 20V

14V

12V

7

V

6

V

8

V

10

V

5

V

Fig . 3. Ou tpu t C har acteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

70

80

0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0

V

DS

- Volts

I

D

- Amper es

V

GS

= 20V

14V

12V

10V

4

V

6V

8V

Fig. 4. R

DS(on)

Normalized to I

D

= 37.5A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Deg ree s Centigrad e

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 75A

I

D

= 37.5A

Fig. 5. R

DS(on)

Normalized to I

D

= 37.5A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0 20 40 60 80 100 120 140 160 180 200 220 240 260

I

D

- Amp e res

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fi g. 6. Maximum D r ai n C u rr en t vs.

Case Temp er atur e

0

10

20

30

40

50

60

70

80

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Ampe res

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH75N10L2

IXTT75N10L2

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

V

GS

- Vo lts

I

D

- Am pe res

T

J

= - 40ºC

25ºC

125ºC

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

80

90

0 20 40 60 80 100 120 140 160 180 200 220

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

40

80

120

160

200

240

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

V

SD

- Vo lts

I

S

- Am pe res

T

J

= 125ºC

T

J

= 25ºC

Fi g . 10. Gate C h ar ge

0

2

4

6

8

10

12

14

16

0 50 100 150 200 250 300

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 50V

I

D

= 37. 5A

I

G

= 10mA

Fig. 11. Capacitance

0.1

1.0

10.0

100.0

0 5 10 15 20 25 30 35 40

V

DS

- Vo lts

Capacitance - NanoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Maxi mu m Tran si en t Ther mal I mp ed an ce

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- º C / W

IXTH75N10L2

IXTT75N10L2

Fi g . 13. F o r war d -B i as Sa fe Op er ati n g Area

@ T

C

= 25ºC

1

10

100

1,000

1 10 100

V

DS

- Volts

I

D

- Am peres

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

100ms

Fi g . 14 . F o r war d -B i as Safe O p er ati n g Ar ea

@ T

C

= 75ºC

1

10

100

1,000

1 10 100

V

DS

- Vo lts

I

D

- Am peres

T

J

= 150ºC

T

C

= 75ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

100ms

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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.