SBC857CLT1G - ON Semiconductor

November, 2011 − Rev. 12

Publication Order Number:

BC856ALT1/D

BC856ALT1G Series,

SBC856ALT1G Series

General Purpose

Transistors

PNP Silicon

Features

•AEC−Q101 Qualified and PPAP Capable

•S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Emitter Voltage

BC856, SBC856

BC857, SBC857

BC858, NSVBC858, BC859

VCEO

−65

−45

−30

Collector-Base Voltage

BC856, SBC856

BC857, SBC857

BC858, NSVBC858, BC859

VCBO

−80

−50

−30

Emitter−Base Voltage VEBO −5.0 V

Collector Current − Continuous IC−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

SOT−23 (TO−236AB)

CASE 318

STYLE 6

COLLECTOR

BASE

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

xx M G

xx = Device Code

xx = (Refer to page 6)

M = Date Code*

G=Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

BC856ALT1G Series, SBC856ALT1G Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC856, SBC856 Series

(IC = −10 mA) BC857, SBC857 Series

BC858, NSBVC858 BC859 Series

V(BR)CEO −65

−45

−30

−

Collector−Emitter Breakdown Voltage BC856 S, SBC856eries

(IC = −10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only

BC858, NSVB858, BC859 Series

V(BR)CES −80

−50

−30

−

Collector−Base Breakdown Voltage BC856, SBC856 Series

(IC = −10 mA) BC857, SBC857 Series

BC858, NSVBC858, BC859 Series

V(BR)CBO −80

−50

−30

−

Emitter−Base Breakdown Voltage BC856, SBC856 Series

(IE = −1.0 mA) BC857, SBC857 Series

BC858, NSVBC858, BC859 Series

V(BR)EBO −5.0

−5.0

−

Collector Cutoff Current (VCB = −30 V)

Collector Cutoff Current (VCB = −30 V, TA = 150°C)

ICBO −

−

−15

−4.0

ON CHARACTERISTICS

DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A

(IC = −10 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B,

BC858B, NSVBC858B

BC857C, SBC857C BC858C

(IC = −2.0 mA, VCE = −5.0 V) BC856A, SBC856A, BC857A,

SBC857A, BC858A

BC856B, SBC856B, BC857B, SBC857B, BC858B,

NSVBC858B, BC859B

BC857C, SBC857C, BC858C, BC859C

hFE −

−

125

220

420

150

270

180

290

520

−

250

475

800

−

Collector−Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VCE(sat)

−

−0.3

−0.65

Base −Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VBE(sat)

−

−0.7

−0.9

−

Base −Emitter On Voltage

(IC = −2.0 mA, VCE = −5.0 V)

(IC = −10 mA, VCE = −5.0 V)

VBE(on)

−0.6

−

−0.75

−0.82

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)

fT100 − − MHz

Output Capacitance

(VCB = −10 V, f = 1.0 MHz)

Cob − − 4.5 pF

Noise Figure

(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series

BC859 Series

−

4.0

BC856ALT1G Series, SBC856ALT1G Series

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BC857/BC858/BC859/SBC857/NSVBC858

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

-0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-0.6

-0.7

-0.8

-0.9

-1.0

-0.5

-0.2

-0.4

-0.1

-0.3

1.6

1.2

2.0

2.8

2.4

-1.2

-1.6

-2.0

-0.02 -1.0 -10

0-20

-0.1

-0.4

-0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

-0.2 -10 -100

-1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

VCE = -10 V

TA = 25°C

-55°C to +125°C

IC = -100 mA

IC = -20 mA

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

IC = -200 mAIC = -50 mAIC =

-10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

-0.4

1.0

100

200

300

400

7.0

5.0

3.0

2.0

-0.5

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

TA = 25°C

Cob

Cib

-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40

150

-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50

VCE = -10 V

TA = 25°C

1.0

BC856ALT1G Series, SBC856ALT1G Series

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BC856/SBC856

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

-0.8

-1.0

-0.6

-0.2

-0.4

1.0

2.0

-0.1 -1.0 -10 -200

-0.2

0.2

0.5

-0.2 -1.0 -10 -200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = -5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

-1.2

-1.6

-2.0

-0.02 -1.0 -10

0-20

-0.1

-0.4

-0.8

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

-0.2 -2.0 -10 -200

-1.0

TJ = 25°C

IC =

-10 mA

hFE, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOLTS)

VCE = -5.0 V

TA = 25°C

0-0.5 -2.0 -5.0 -20 -50 -100

-0.05 -0.2 -0.5 -2.0 -5.0

-100 mA

-20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

-0.5 -5.0 -20 -50 -100

-55°C to 125°C

qVB for VBE

-2.0 -5.0 -20 -50 -100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

-0.1 -0.2 -1.0 -50

2.0 -2.0 -10 -100

100

200

500

6.0

4.0

-1.0 -10 -100

VCE = -5.0 V

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT

-0.5 -5.0 -20

TJ = 25°C

Cob

Cib

8.0

-50 mA -200 mA

BC856ALT1G Series, SBC856ALT1G Series

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Figure 13. Thermal Response

t, TIME (ms)

1.0

r(t), TRANSIENT THERMAL

2.0 5.01.00.50.20.1

RESISTANCE (NORMALIZED)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

20 5010 200 500100 1.0k 2.0k 5.0k 10k

Figure 14. Active Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (V)

-200

-1.0

IC, COLLECTOR CURRENT (mA)

TA = 25°C

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

ZqJC(t) = r(t) RqJC

RqJC = 83.3°C/W MAX

ZqJA(t) = r(t) RqJA

RqJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

-100

-50

-10

-5.0

-2.0

-5.0 -10 -30 -45 -65 -100

1 s

BC558, BC559

BC557

BC556

The safe operating area curves indicate IC−VCE limits of

the transistor that must be observed for reliable operation.

Collector load lines for specific circuits must fall below the

limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC or

TA is variable depending upon conditions. Pulse curves are

valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)

may be calculated from the data in Figure 13. At high case or

ambient temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by the secondary breakdown.

BC856ALT1G Series, SBC856ALT1G Series

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ORDERING INFORMATION

Device Marking Package Shipping†

BC856ALT1G

SOT−23

(Pb−Free) 3,000 / Tape & Reel

SBC856ALT1G

BC856ALT3G 10,000 / Tape & Reel

BC856BLT1G

SOT−23

(Pb−Free) 3,000 / Tape & Reel

SBC856BLT1G

BC856BLT3G

10,000 / Tape & Reel

SBC856BLT3G

BC857ALT1G

SOT−23

(Pb−Free) 3,000 / Tape & Reel

SBC857ALT1G

BC857BLT1G

SOT−23

(Pb−Free) 3,000 / Tape & Reel

SBC857BLT1G

BC857BLT3G 10,000 / Tape & Reel

BC857CLT1G

SOT−23

(Pb−Free) 3,000 / Tape & Reel

SBC857CLT1G

BC857CLT3G 10,000 / Tape & Reel

BC858ALT1G 3J SOT−23

(Pb−Free)

3,000 / Tape & Reel

BC858BLT1G

SOT−23

(Pb−Free)

NSVBC858BLT1G

BC858BLT3G

SOT−23

(Pb−Free) 10,000 / Tape & Reel

BC858CLT1G SOT−23

(Pb−Free) 3,000 / Tape & Reel

BC858CLT3G SOT−23

(Pb−Free) 10,000 / Tape & Reel

BC859BLT1G

SOT−23

(Pb−Free) 3,000 / Tape & Reel

BC859BLT3G SOT−23

(Pb−Free) 10,000 / Tape & Reel

BC859CLT1G

SOT−23

(Pb−Free) 3,000 / Tape & Reel

BC859CLT3G SOT−23

(Pb−Free) 10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BC856ALT1G Series, SBC856ALT1G Series

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BC856ALT/D

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