© 2002 IXYS All rights reserved
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Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
ACA
TO-247 AD
A = Anode, C = Cathode , TAB = Cathode
A
A
CC (TAB)
Features
International standard package
Very low VF
Extremely low switching losses
Low IRM-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Dimensions see pages D2 - 87-88
Power Schottky Rectifier
with common cathode IFAV = 2x40 A
VRRM = 25 / 30 V
VF= 0.39 V
232
DSSK 80-0025B
DSSK 80-003B
VRSM VRRM Type
V V
25 25 DSSK 80-0025B
30 30 DSSK 80-003B
Symbol Conditions Maximum Ratings
IFRMS 70 A
IFAV TC = 130°C; rectangular, d = 0.5 40 A
IFAV TC = 130°C; rectangular, d = 0.5; per device 80 A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A
EAS IAS = 6 A; L = 180 µH; TVJ = 25°C; non repetitive 10 mJ
IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 6 A
(dv/dt)cr 5000 V/µs
TVJ -55...+150 °C
TVJM 150 °C
Tstg -55...+150 °C
Ptot TC = 25°C 155 W
Mdmounting torque 0.8...1.2 Nm
Weight typical 6 g
Symbol Conditions Characteristic Values
typ. max.
IRTVJ = 25°CV
R= VRRM 40 mA
TVJ = 100°CV
R= VRRM 250 mA
VFIF = 40 A; TVJ = 125°C 0.39 V
IF = 40 A; TVJ = 25°C 0.48 V
IF = 80 A; TVJ = 125°C 0.56 V
RthJC 0.8 K/W
RthCH 0.25 K/W
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© 2002 IXYS All rights reserved
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DSSK 80-0025B
DSSK 80-003B
0.0 0.2 0.4 0.6
1
10
100
0 5 10 15 20 25
0.1
1
10
100
1000
10000
0 102030405060
0
5
10
15
20
25
30
35
40
0.001 0.01 0.1 1 10
0.1
1
0 40 80 120 160
0
10
20
30
40
50
60
70
80
IF(AV)
TC
°CIF(AV)
ts
K/W
IFSM
tP
A
0 5 10 15 20 25
1000
10000
CT
IR
IF
A
VFVRVR
V
pF
V
mA
A
P(AV)
W
ZthJC
V
DSSK 80-0025B
A
µs
125°C
25°C
TVJ =
150°C
125°C
25°C
d =
DC
0.5
0.33
0.25
0.17
0.08
0.08
DC
50°C
100°C
75°C
0.17
0.25
D=0.5
0.33
Single Pulse
d = 0.5
TVJ= 25°C
TVJ = 150°C
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
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