NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002
MJE13003
TO-126
Plastic Package
Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL MJE13002 UNIT
Collector Emitter Voltage VCEO(sus) 300 V
Collector Emitter Voltage VCEV 600 V
Emitter Base Voltage VEBO 9.0 V
Collector Current Continuous I
1.5 A
Peak *ICM 3.0 A
Base Current Continuous I
0.75 A
Peak *IBM 1.5 A
Emitter Current Continuous IE 2.25 A
Peak *IEM
4.5 A
Total Power Dissipation @ T
P
1.4 W
Derate Above 25ºC 11.2 mW/ ºC
Total Power Dissipation @ T
P
40 W
Derate Above 25ºC 320 mW/ ºC
Operating And Storage Junction
Tj, Tstg - 65 to 150 ºC
THERMAL RESISTANCE
Junction to Case Rth (j-c) 3.12 ºC/W
Junction to Ambient in free air Rth (j-a) 89 ºC/W
Maximum Load Temperature for
Soldering Purposes 1/8" from Case for 5
Seconds TL275 ºC
*Pulse Test: Pulse Width=5ms, Duty Cycle<10%
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage **VCEO(sus) IC=10mA, IB=0
MJE13002 300 V
MJE13003 400 V
Collector Cuttoff Current ICEV
CEV
VBE(off)=1.5V 1.0 mA
VCEV=Rated Value,
VBE(off)=1.5V,Tc=100ºC 5.0 mA
Emitter Cuttoff Current IEBO VEB=9V, IC=0 1.0 mA
MJE13003
400
700
Continental Device India Limited Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company